Search Results - "Masumi Saitoh"

Guest Editorial Special Section on EDTM 2022 by Saitoh, Masumi

“…This Special Issue of the IEEE Journal of the Electron Devices Society is a selection of papers presented at the 2022 IEEE Electron Devices Technology and…”
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Low-power linear computation using nonlinear ferroelectric tunnel junction memristors by Berdan, Radu, Marukame, Takao, Ota, Kensuke, Yamaguchi, Marina, Saitoh, Masumi, Fujii, Shosuke, Deguchi, Jun, Nishi, Yoshifumi

“…Analogue in-memory computing using memristors could alleviate the performance constraints imposed by digital von Neumann systems in data-intensive tasks…”
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Comprehensive study of variability in poly-Si channel nanowire transistor by Ota, Kensuke, Kawai, Tomoya, Saitoh, Masumi

“…Variability in poly-Si nanowire transistors (NW Tr.) is studied with respect to device and grain size. Threshold voltage (Vth) variability decreases as grain…”
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Experimental Study of Random Telegraph Noise in Trigate Nanowire MOSFETs by Ota, Kensuke, Saitoh, Masumi, Tanaka, Chika, Matsushita, Daisuke, Numata, Toshinori

“…Random telegraph noise (RTN) in trigate nanowire transistors (NW Tr.) is systematically studied with respect to the NW size dependence. Time to capture and…”
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Probing spatial heterogeneity in silicon thin films by Raman spectroscopy by Yamazaki, Hideyuki, Koike, Mitsuo, Saitoh, Masumi, Tomita, Mitsuhiro, Yokogawa, Ryo, Sawamoto, Naomi, Tomita, Motohiro, Kosemura, Daisuke, Ogura, Atsushi

“…Raman spectroscopy is a powerful technique for revealing spatial heterogeneity in solid-state structures but heretofore has not been able to measure spectra…”
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Toe Clearance Rehabilitative Slippers for Older Adults With Fall Risk: A Randomized Controlled Trial by Satoh, Atsuko, Kudoh, Yukoh, Lee, Sangun, Saitoh, Masumi, Miura, Miwa, Ohnuma, Yuka, Fukushi, Naoki, Sasaki, Hidetada

“…Introduction: To evaluate fall-prevention rehabilitative slippers for use by self-caring, independent older adults. Materials and Methods: This…”
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Threshold Voltage Control by Substrate Bias in 10-nm-Diameter Tri-Gate Nanowire MOSFET on Ultrathin BOX by Ota, K., Saitoh, M., Tanaka, C., Numata, T.

“…We investigated the substrate bias effect in 10-nm-diameter tri-gate nanowire (NW) MOSFETs on ultrathin BOX. By employing a thin BOX of 20 nm and a thin NW…”
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Individual analysis of inter and intragrain defects in electrically characterized polycrystalline silicon nanowire TFTs by multicomponent dark-field imaging based on nanobeam electron diffraction two-dimensional mapping by Asano, Takanori, Takaishi, Riichiro, Oda, Minoru, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki

“…We visualize the grain structures for individual nanosized thin film transistors (TFTs), which are electrically characterized, with an improved data processing…”
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Experimental study of time-dependent dielectric breakdown in tri-gate nanowire transistor by Ota, Kensuke, Tanaka, Chika, Numata, Toshinori, Matsushita, Daisuke, Saitoh, Masumi

“…We systematically investigate the size dependence of the time-dependent dielectric breakdown (TDDB) in a tri-gate nanowire transistor (NW Tr.). It is newly…”
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Channel size dependence of low-frequency noise in tri-gate silicon nanowire transistors by Saitoh, Masumi, Ota, Kensuke, Tanaka, Chika, Numata, Toshinori

“…We systematically study the channel size dependence of drain current noise amplitude in tri-gate silicon nanowire transistors (NW Tr.) by measuring a large…”
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Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry by Ota, K., Saitoh, M., Tanaka, C., Nakabayashi, Y., Numata, T.

“…Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural…”
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Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature by Saitoh, Masumi, Hiramoto, Toshiro

“…First room-temperature (RT) observation of extended Coulomb blockade (CB) region due to quantum confinement in the ultrasmall silicon dot in a single-hole…”
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Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors by Ota, Kensuke, Sakuma, Kiwamu, Irisawa, Toshifumi, Tanaka, Chika, Matsushita, Daisuke, Saitoh, Masumi

“…We systematically study the mechanism of source and drain parasitic resistance reduction in amorphous InGaZnO thin-film transistors. Hall measurement shows…”
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SPICE-Based Performance Analysis of Trigate Silicon Nanowire CMOS Circuits by Tanaka, C., Saitoh, M., Ota, K., Uchida, K., Numata, T.

“…An ultralow-voltage performance is investigated in nanowire transistors (NW Tr.) CMOS circuits. SPICE model parameters of BSIM4 are extracted from measurement…”
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Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors by Miyaji, Kousuke, Saitoh, Masumi, Hiramoto, Toshiro

“…The full width at half maximum (FWHM) of the negative differential conductance (NDC) characteristics in room temperature (RT)-operating silicon single-hole…”
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Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETs by Saitoh, Masumi, Yasutake, Nobuaki, Nakabayashi, Yukio, Uchida, Ken, Numata, Toshinori

“…Threshold voltage V th variations in scaled (110) n/pMOSFETs are systematically investigated. V th variations in (110) nMOSFETs and pMOSFETs with high channel…”
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Large memory window and long charge-retention time in ultranarrow-channel silicon floating-dot memory by Saitoh, Masumi, Nagata, Eiji, Hiramoto, Toshiro

“…We propose and demonstrate an ultranarrow-channel silicon floating-dot memory, in which the channel width is scaled to sub-10 nm. In the fabricated…”
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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p -type metal-oxide-semiconductor field-effect transistors by Kobayashi, Shigeki, Saitoh, Masumi, Nakabayashi, Yukio, Uchida, Ken

“…Uniaxial stress effects on Coulomb-limited mobility ( μ Coulomb ) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated…”
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One-to-one correspondence between nm-resolution channel crystallinity and electrical property of poly-Si TFT revealed by NBD two-dimensional imaging by Asano, Takanori, Takaishi, Riichiro, Oda, Minora, Sakuma, Kiwamu, Saitoh, Masumi, Tanaka, Hiroki

“…We successfully established the direct correspondence between the whole channel crystallinity at nm-scale and electrical property in one and the same poly-Si…”
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Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability by Ota, Kensuke, Saitoh, Masumi, Tanaka, Chika, Matsushita, Daisuke, Numata, Toshinori

“…We experimentally study the random telegraph noise (RTN) in nanowire transistor (NW Tr.) with various widths (W), lengths (L), and heights (H). Time components…”
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