Search Results - "Mastro, A M"

GaN vertical and lateral polarity heterostructures on GaN substrates by Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

“…A method to control local GaN polarity on GaN substrates without using Mg-induced inversion has been developed. This method rests on the development of thin…”
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Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy by Freitas, J.A., Culbertson, J.C., Mastro, M.A., Kumagai, Y., Koukitu, A.

“…The morphology, structural and optical properties of void-assisted freestanding HVPE-AlN films were investigated by a combination of non-destructive…”
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Influence of polarity on GaN thermal stability by Mastro, M.A., Kryliouk, O.M., Anderson, T.J., Davydov, A., Shapiro, A.

“…A comparative study of the stability of Ga- and N-polar GaN films was made in different gas ambients (N 2, H 2, NH 3, HCl). The Ga-polar films were observed to…”
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Approach for dislocation free GaN epitaxy by Hite, J.K., Mastro, M.A., Eddy, C.R.

“…The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature…”
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Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy by Freitas, J.A., Mastro, M.A., Glaser, E.R., Garces, N.Y., Lee, S.K., Chung, J.H., Oh, D.K., Shim, K.B.

“…Thick freestanding films or bulk GaN substrates with very low background impurity levels (≤1×1015/cm3) and high crystalline quality are required for a number…”
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Seeded growth of GaN single crystals from solution at near atmospheric pressure by Feigelson, B.N., Frazier, R.M., Gowda, M., Freitas, J.A., Fatemi, M., Mastro, M.A., Tischler, J.G.

“…A multi-component solvent has been developed to dissolve solid gallium nitride (GaN) source material and grow single GaN crystals from the solution on GaN…”
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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy by Nepal, N., Qadri, S. B., Hite, J. K., Mahadik, N. A., Mastro, M. A., Eddy, C. R.

“…Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire…”
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Nature of luminescence and strain in gallium nitride nanowires by Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.

“…Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution…”
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Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging by Twigg, M. E., Picard, Y. N., Caldwell, J. D., Eddy, C. R., Mastro, M. A., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

“…Forescattered electron channeling contrast imaging (ECCI) offers the potential for imaging and analyzing extended defects in a scanning electron microscope…”
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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates by Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.

“…Distributed Bragg reflectors (DBRs) composed of an AlN∕AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si…”
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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates by Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

“…A number of applications require deposition of thick, high-quality AlN films with low stress on Si substrates. Conventional high-temperature MOCVD growth…”
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Rare-earth chloride seeded growth of GaN nano- and micro-crystals by Mastro, M.A., Freitas, J.A., Holm, R.T., Eddy, C.R., Caldwell, J., Liu, K., Glembocki, O., Henry, R.L., Kim, J.

“…A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the…”
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Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates by REED, M. D, KRYLIOUK, O. M, MASTRO, M. A, ANDERSON, T. J

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Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps by Bassim, N.D., Twigg, M.E., Mastro, M.A., Eddy, C.R., Zega, T.J., Henry, R.L., Culbertson, J.C., Holm, R.T., Neudeck, P., Powell, J.A., Trunek, A.J.

“…Using transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films deposited by metalorganic vapor phase epitaxy on…”
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Lowered dislocation densities in uniform GaN layers grown on step-free (0001) 4H-SiC mesa surfaces by Bassim, N. D., Twigg, M. E., Eddy, C. R., Culbertson, J. C., Mastro, M. A., Henry, R. L., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

“…We report that very low threading dislocation densities ( 8 × 10 7 ∕ cm 2 ) were achieved in uniform GaN layers grown by metalorganic chemical vapor deposition…”
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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD by Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.

“…•Simultaneous growth of 2 µm on native GaN substrates from three vendors.•Morphology differences in all cases match substrates.•Similar Si and O incorporation…”
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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging by Picard, Y.N., Twigg, M.E., Caldwell, J.D., Eddy, C.R., Mastro, M.A., Holm, R.T.

“…We report evidence for non-destructive determination of dislocation type and Burgers vector direction in GaN using electron channeling contrast imaging (ECCI)…”
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Reducing saturated fat intake is associated with increased levels of LDL receptors on mononuclear cells in healthy men and women by Mustad, V A, Etherton, T D, Cooper, A D, Mastro, A M, Pearson, T A, Jonnalagadda, S S, Kris-Etherton, P M

“…Studies with animal models suggest that saturated fatty acids raise low density lipoprotein (LDL)-cholesterol LDL dietary saturated fat on LDL-receptor…”
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Effect of irrigation with different municipal wastewaters on ripening indexes and chemical components of nectarine fruits by Vivaldi, G. A, Camposeo, S, Mastro, M. A, Lacolla, G, Lonigro, A, Rubino, P

“…Municipal wastewaters reuse can lead to an important benefit linked to improve water resources and to preserve water quality, so reducing the environmental…”
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Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging by Picard, Y. N., Caldwell, J. D., Twigg, M. E., Eddy, C. R., Mastro, M. A., Henry, R. L., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.

“…Threading dislocations in metal-organic chemical-vapor grown GaN films were imaged nondestructively by the electron channeling contrast imaging (ECCI)…”
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