Search Results - "Masten, Hannah N."

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging by Lundh, James Spencer, Pavlidis, Georges, Sasaki, Kohei, Centrone, Andrea, Spencer, Joseph A., Masten, Hannah N., Currie, Marc, Jacobs, Alan G., Konishi, Keita, Kuramata, Akito, Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral…”
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Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films by Lundh, James Spencer, Huynh, Kenny, Liao, Michael, Olsen, William, Pan, Kaicheng, Sasaki, Kohei, Konishi, Keita, Masten, Hannah N., Hite, Jennifer K., Mastro, Michael A., Mahadik, Nadeemullah A., Goorsky, Mark, Kuramata, Akito, Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…The effect of heteroepitaxial β-(AlxGa1−x)2O3 film thickness and Al content on surface morphology was characterized to experimentally determine the critical…”
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Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond by Masten, Hannah N., Lundh, James Spencer, Feygelson, Tatyana I., Sasaki, Kohei, Cheng, Zhe, Spencer, Joseph A., Liao, Pai-Ying, Hite, Jennifer K., Pennachio, Daniel J., Jacobs, Alan G., Mastro, Michael A., Feigelson, Boris N., Kuramata, Akito, Ye, Peide, Graham, Samuel, Pate, Bradford B., Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…The low thermal conductivity of β-Ga2O3 is a significant concern for maximizing the potential of this ultra-wide bandgap semiconductor as a power switching…”
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Ternary Alloy Rare-Earth Scandate as Dielectric for \beta -Ga2O3 MOS Structures by Masten, Hannah N., Phillips, Jamie D., Peterson, Rebecca L.

“…A ternary alloy rare-earth scandate, (Y 0.6 Sc 0.4 ) 2 O 3 , is demonstrated as a high-<inline-formula> <tex-math notation="LaTeX">{k}…”
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Ternary Alloy Rare-Earth Scandate as Dielectric for $\beta$ -Ga 2 O 3 MOS Structures by Masten, Hannah N., Phillips, Jamie D., Peterson, Rebecca L.

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Ternary Alloy Rare-Earth Scandate as Dielectric for [Formula Omitted]-Ga2O3 MOS Structures by Masten, Hannah N, Phillips, Jamie D, Peterson, Rebecca L

“…A ternary alloy rare-earth scandate, (Y0.6Sc0.4)2O3, is demonstrated as a high-[Formula Omitted] dielectric insulator for [Formula Omitted]-Ga2O3 MOS devices…”
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NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV by Wan, Hsiao-Hsuan, Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Ren, Fan, Masten, Hannah N., Lundh, James Spencer, Spencer, Joseph A., Alema, Fikadu, Osinsky, Andrei, Jacobs, Alan G., Hobart, Karl, Tadjer, Marko J., Pearton, S. J.

“…NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral geometry rectifiers with diameter 50–100 μm exhibited maximum reverse breakdown voltages >7 kV, showing the…”
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AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices by Lundh, James Spencer, Masten, Hannah N., Sasaki, Kohei, Jacobs, Alan G., Cheng, Zhe, Spencer, Joseph, Chen, Lei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Hobart, Karl D., Tadjer, Marko J.

“…While the ultrawide bandgap (Eg~4.9 e V) and high critical electric field (E c ~8 MV /cm) of ß-Ga 2 O 3 [1] has promising implications for power electronics,…”
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