Search Results - "Masson, D. P"

Ultrahigh efficiencies in vertical epitaxial heterostructure architectures by Fafard, S., York, M. C. A., Proulx, F., Valdivia, C. E., Wilkins, M. M., Arès, R., Aimez, V., Hinzer, K., Masson, D. P.

“…Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure…”
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High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60 by Fafard, S., Proulx, F., York, M. C. A., Richard, L. S., Provost, P. O., Arès, R., Aimez, V., Masson, D. P.

“…Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial HeteroStructure Architecture (VEHSA) design have been achieved with…”
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Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching by Turala, A., Jaouad, A., Masson, D. P., Fafard, S., Arès, R., Aimez, V.

“…Microfabrication cycles of III-V multijunction solar cells include several technological steps and end with a wafer dicing step to separate individual cells…”
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Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60 by Proulx, F., York, M. C. A., Provost, P. O., Arès, R., Aimez, V., Masson, D. P., Fafard, S.

“…Photon‐recycling effects are studied experimentally in photovoltaic power converting III–V semiconductor devices designed with the vertical epitaxial…”
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Temperature distribution over a GaAs heterojunction bipolar transistor measured by fluorescent microthermal imaging by Boyer, N., Oliver, B., Hagley, A., Masson, D. P., Simard-Normandin, Martine, Meunier, Michel

“…Fluorescent microthermal imaging (FMI) is used to measure the temperature at the surface of a 2×2 μm2 heterojunction bipolar transistor. The presence of an…”
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Effect of Incident Translational Energy and Surface Temperature on the Sticking Probability of F2 and O2 on Si(100)-2.times.1 and Si(111)-7.times.7 by Behringer, E. R, Flaum, H. C, Sullivan, D. J. D, Masson, D. P, Lanzendorf, E. J, Kummel, A. C

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The sticking and dissociation of NH3 on W(110) : a three-state model by MASSON, D. P, MERRILL, R. P, HOUSTON, P. L

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Photoinduced ejection of ballistic oxygen atoms from N2O adsorbed on Pt(111) by Masson, DP, Lanzendorf, EJ, Kummel, AC

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Back-surface passivation of polycrystalline CdSe thin-film transistors by Landheer, D., Masson, D. P., Belkouch, S., Das, S. R., Quance, T., LeBrun, L., Hulse, J. E.

“…The electrical characteristics of simple inverted-gate CdSe thin-film transistors (TFTs) were monitored after annealing and back-surface passivation treatments…”
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Effects of initial annealing treatments on the electrical characteristics and stability of unpassivated CdSe thin film transistors by Belkouch, S., Landheer, D., Masson, D. P., Das, S. R., Quance, T., LeBrun, L., Rolfe, S. J.

“…Secondary ion mass spectrometry shows that when CdSe is annealed in air at 350 °C oxygen diffuses inside the grains and the diffusion is enhanced at the grain…”
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Ultra-efficient N-junction photovoltaic cells with VOC > 14V at high optical input powers by Fafard, S., York, M. C. A., Proulx, F., Wilkins, M., Valdivia, C. E., Bajcsy, M., Ban, D., Ares, R., Aimez, V., Hinzer, K., Ishigaki, M., Masson, D. P.

“…GaAs phototransducers with 5 to 12 p/n junctions are shown to demonstrate breakthrough performance in optical conversion efficiency ranging from 65% to just…”
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FMI applied to the study of the temperature distribution in flip chips by Boyer, N., Masson, D.P., Meunier, M., Simard-Normandin, M.

“…The use of fluorescent microthermal imaging (FMI) as a tool to study the temperature distribution in flip chip packages was investigated. Backgrinding of the…”
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Atomic selectivity in the chemisorption of ICl (iodochloride) on silicon surfaces by LIU, Y, MASSON, D. P, KUMMEL, A. C

“…When ICl adsorbs on a clean silicon (111)-(7×7) surface, the reaction is chemically selective. This process has been studied with the use of scanning tunneling…”
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Long-range structural relaxation in the Staebler-Wronski effect: Electronic processes in hydrogenated amorphous silicon by MASSON, D. P, ABDELHAK OUHLAL, YELON, A

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Photoinduced Ejection of Ballistic Oxygen Atoms from N 2 O Adsorbed on Pt(111) by Masson, D. P., Lanzendorf, E. J., Kummel, A. C.

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Long-range structural relaxation in the Staebler-Wronski effect by Masson, Denis P., Ouhlal, Abdelhak, Yelon, Arthur

“…X-ray photoemission spectroscopy (XPS) has been used to study the structural changes of device-quality a-Si:H between the annealed state (A) and the…”
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Atomic Selectivity in the Chemisorption of ICI (Iodochloride) on Silicon Surfaces by Liu, Yong, Masson, Denis P., Kummel, Andrew C.

“…When ICI adsorbs on a clean silicon (111)-(7 × 7) surface, the reaction is chemically selective. This process has been studied with the use of scanning…”
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Evidence of weak phonon coupling to the Si-H stretching modes in a-Si:H by Grimal, O, Masson, DP, Bertrand, L, Yelon, A

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