Search Results - "Massabuau, F."

Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3 by Nicol, D., Oshima, Y., Roberts, J. W., Penman, L., Cameron, D., Chalker, P. R., Martin, R. W., Massabuau, F. C.-P.

“…Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy…”
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Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions by Hammersley, S., Kappers, M. J., Massabuau, F. C.-P., Sahonta, S.-L., Dawson, P., Oliver, R. A., Humphreys, C. J.

“…InGaN-based light emitting diodes and multiple quantum wells designed to emit in the green spectral region exhibit, in general, lower internal quantum…”
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Directly correlated microscopy of trench defects in InGaN quantum wells by O'Hanlon, T.J., Massabuau, F C-P., Bao, A., Kappers, M.J., Oliver, R.A.

“…•Method to observe the same trench defects in InGaN quantum well (QW) structures under different microscopes.•Trench defects with strong redshifted light…”
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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem by Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

“…The impact of trench defects in blue InGaN/GaN light emitting diodes (LEDs) has been investigated. Two mechanisms responsible for the structural degradation of…”
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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures by Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

“…In a wide variety of InGaN/GaN quantum well (QW) structures, defects are observed which consist of a trench partially or fully enclosing a region of the QW…”
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Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN by Smith, E.J.W., Piracha, A.H., Field, D., Pomeroy, J.W., Mackenzie, G.R., Abdallah, Z., Massabuau, F.C.-P., Hinz, A.M., Wallis, D.J., Oliver, R.A., Kuball, M., May, P.W.

“…We report a method of growing a diamond layer via chemical vapour deposition (CVD) utilizing a mixture of microdiamond and nanodiamond seeding to give a low…”
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Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced by O'Hanlon, T.J., Zhu, T., Massabuau, F.C.-P., Oliver, R.A.

“…•Method for preparation of transmission electron microscopy lamellae on a cleaved cross section.•Allows site-specific preparation of features imaged in cross…”
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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures by Davies, M. J., Dawson, P., Massabuau, F. C.-P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

“…In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN…”
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Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures by Massabuau, F. C.-P., Davies, M. J., Blenkhorn, W. E., Hammersley, S., Kappers, M. J., Humphreys, C. J., Dawson, P., Oliver, R. A.

“…High resolution transmission electron microscopy has been employed to investigate the impact of the GaN barrier growth technique on the composition profile of…”
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Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition by Roberts, J.W., Chalker, P.R., Ding, B., Oliver, R.A., Gibbon, J.T., Jones, L.A.H., Dhanak, V.R., Phillips, L.J., Major, J.D., Massabuau, F.C.-P.

“…•α-Ga2O3 can be grown directly from 200 °C to 400 °C; lower than for other techniques.•Morphology of Ga2O3 grown on sapphire by PEALD depends on the growth…”
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Pure single-photon emission from an InGaN/GaN quantum dot by Holmes, M. J., Zhu, T., Massabuau, F. C.-P., Jarman, J., Oliver, R. A., Arakawa, Y.

“…Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for…”
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α-Ga2O3 grown by low temperature atomic layer deposition on sapphire by Roberts, J.W., Jarman, J.C., Johnstone, D.N., Midgley, P.A., Chalker, P.R., Oliver, R.A., Massabuau, F.C-P.

“…•Growth of α-Ga2O3 was achieved by atomic layer deposition on sapphire.•The film was grown at a rate of 0.48 Å/cycle.•(0001) -oriented α-Ga2O3 columns…”
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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes by Oliver, R. A., Massabuau, F. C.-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., Humphreys, C. J.

“…Photoluminescence and electroluminescence measurements on InGaN/GaN quantum well (QW) structures and light emitting diodes suggest that QWs with gross…”
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Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques by O'Hanlon, T.J., Bao, A., Massabuau, F.C.-P., Kappers, M.J., Oliver, R.A.

“…•Method for preparation of lamellae for transmission electron microscopy.•Allows site specific preparation of small or hard to locate features.•Feature…”
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The impact of growth parameters on trench defects in InGaN/GaN quantum wells by Massabuau, F. C.-P., Le Fol, A., Pamenter, S. K., Oehler, F., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

“…The impact of the InGaN growth temperature and of the trimethylindium flux on trench defects has been investigated. We show that the density of defects is…”
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells by Roble, A. A., Patra, S. K., Massabuau, F., Frentrup, M., Leontiadou, M. A., Dawson, P., Kappers, M. J., Oliver, R. A., Graham, D. M., Schulz, S.

“…We report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of…”
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The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method by Massabuau, F.C.-P., Tartan, C.C., Traynier, R., Blenkhorn, W.E., Kappers, M.J., Dawson, P., Humphreys, C.J., Oliver, R.A.

“…The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase…”
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Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells by Roble, A. A., Patra, S. K., Massabuau, F., Frentrup, M., Leontiadou, M. A., Dawson, P., Kappers, M. J., Oliver, R. A., Graham, D. M., Schulz, S.

“…An amendment to this paper has been published and can be accessed via a link at the top of the paper…”
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Sequential plan-view imaging of sub-surface structures in the transmission electron microscope by Massabuau, F.C-P., Springbett, H.P., Divitini, G., Griffin, P.H., Zhu, T., Oliver, R.A.

“…Transmission electron microscopy (TEM) is a central technique for the characterisation of materials at the atomic scale. However, it requires the sample to be…”
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Low temperature growth and optical properties of {\alpha}-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition by Roberts, J. W, Chalker, P. R, Ding, B, Oliver, R. A, Gibbon, J. T, Jones, L. A. H, Dhanak, V. R, Phillips, L. J, Major, J. D, Massabuau, F. C-P

“…Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The…”
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