Search Results - "Maserjian, J."

Novel Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detectors by LIN, T. L, MASERJIAN, J

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Optically induced absorption modulation in a periodically delta-doped InGaAs/GaAs multiple quantum well structure by Larsson, A., Maserjian, J.

“…Strong optically induced absorption modulation has been achieved in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. The use of…”
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Photoresponse probe of the space charge distribution in ferroelectric lead zirconate titanate thin film memory capacitors by Thakoor, Sarita, Maserjian, J.

“…A photoresponse study of sol‐gel derived polycrystalline thin films of lead zirconate titanate (PZT) is described. Thin film ferroelectric capacitors were…”
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Optically addressed asymmetric Fabry-Perot modulator by Larsson, A., Maserjian, J.

“…A low power, high contrast optically addressed modulator, operating with normal incidence, has been fabricated. Optically controlled reflection modulation is…”
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Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure by Larsson, A., Maserjian, J.

“…Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity…”
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Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy by Lin, T. L., Park, J. S., George, T., Jones, E. W., Fathauer, R. W., Maserjian, J.

“…By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky…”
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Radiation-Induced Defects in SiO2 as Determined with XPS by Grunthaner, F. J., Grunthaner, P. J., Maserjian, J.

“…Device quality gate oxides (~ 850 Å) grown on Si (100) substrates are irradiated with 0 - 20 eV electrons during in situ XPS measurements. These structures…”
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SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy by Lin, T.-L., Ksendzov, A., Dejewski, S.M., Jones, E.W., Fathaure, R.W., Krabach, T.N., Maserjian, J.

“…A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The…”
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Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors by Lin, T. L., Maserjian, J.

“…The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped…”
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Carrier recombination in a periodically δ-doped multiple quantum well structure by JONSSON, B, LARSSON, A. G, SJÖLUND, O, SHUMIN WANG, ANDERSSON, T. G, MASERJIAN, J

“…We have theoretically and experimentally investigated the optical-excitation-dependent carrier recombination lifetime in a periodically delta-doped InGaAs/GaAs…”
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Experimental Observations of the Chemistry of the SiO2/Si Interface by Grunthaner, F. J., Maserjian, J.

“…Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface…”
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Ambipolar diffusion anisotropy induced by defects in nipi -doped In0.2Ga0.8As/GaAs multiple quantum wells by Rich, D. H., Rammohan, K., Tang, Y., Lin, H. T., Maserjian, J., Grunthaner, F. J., Larsson, A., Borenstain, S. I.

“…The influence of strain-induced defects on the ambipolar diffusive transport of excess electrons and holes in the δ-doped InGaAs/GaAs multiple quantum well…”
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Electron beam-induced absorption modulation imaging of strained In0.2Ga0.8As/GaAs multiple quantum wells by RICH, D. H, RAMMOHAN, K, TANG, Y, LIN, H. T, MASERJIAN, J, GRUNTHANER, F. J, LARSSON, A

“…We have examined the effects of electron-hole plasma generation on excitonic absorption phenomena in nipi-doped In0.2Ga0.8As/GaAs multiple quantum wells (MQWs)…”
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Modeling of planar varactor frequency multiplier devices with blocking barriers by Lieneweg, U., Tolmunen, T.J., Frerking, M.A., Maserjian, J.

“…Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. The roles and and limitations of various blocking barriers…”
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XPS Studies of Structure-Induced Radiation Effects at the Si/SiO2 Interface by Grunthaner, F. J., Lewis, B. F., Zamini, N., Maserjian, J., Madhukar, A.

“…The interfacial structures of radiation hard and soft oxides grown by both dry and wet processes on silicon substrates are examined using high resolution x-ray…”
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A new thin-film thermal detector by Maserjian, J.

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Tunneling through thin MOS structures: Dependence on energy ( E -κ) by Maserjian, J., Petersson, G. P.

“…The tunneling characteristics of Cr/SiO2/Si structures in the thickness range 23–34 Å are reported. The E-κ dependence in the energy range extending 3.5 eV…”
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Optically controlled absorption modulator based on state filling of In(x)Ga(1-x)As/GaAs quantum wells by Iannelli, J. M., Maserjian, J., Hancock, B. R., Andersson, P. O., Grunthaner, F. J.

“…The first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped In(x)Ga(1-x)As/GaAs multiple quantum…”
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Spectral and temporal characteristics of AlGaAs/GaAs superlattice p-i-n photodetectors by Larsson, A., Yariv, A., Tell, R., Maserjian, J., Eng, S. T.

“…Measurements of the spectral and the temporal response of AlGaAs/GaAs p-i-n photodetectors with superlattice intrinsic regions grown by molecular beam epitaxy…”
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Model for Thickness Dependence of Radiation Charging in MOS Structures by Viswanathan, C. R., Maserjian, J.

“…The model considers charge buildup in MOS structures due to hole trapping in the oxide and the creation of sheet charge at the silicon interface. The…”
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