Search Results - "Mascot, M."
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Investigation of interfacial dead layers parameters in Au/Ba0.85Sr0.15TiO3/Pt capacitor devices
Published in Journal of alloys and compounds (15-06-2020)“…New ferroelectric Ba0.85Sr0.15TiO3 (BST) thin films are deposited with different thicknesses (50,100, 200,280 and 400 nm) on silicon platinized substrates…”
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2
High-performance screen-printed Au/Ba0.85Sr0.15TiO3/Pt capacitors for tunable devices
Published in Journal of alloys and compounds (15-10-2021)“…•Lead free Ba0.85Sr0.15TiO3 thick films are synthesized by screen printing method on Pt/Ti/SiO2/Si substrates.•The dielectric properties of Ba0.85Sr0.15TiO3…”
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Enhanced dielectric properties of ternary ZnO-based composites for dielectric applications
Published in Applied physics. A, Materials science & processing (2022)“…In this work, (1-x) ZnO/xNb 2 O 5 mixture with ( x = 0.01, 0.05, 0.1, 0.15 and 0.2) is used to synthesize composites by means of the solid-state method. The…”
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4
Lead-free piezoelectric thin films for RoHS devices
Published in Sensors and actuators. A. Physical. (15-06-2015)“…•In regards with the RoHS European directive (Restriction of Hazardous Substances), there is a need for lead-free materials dedicated to electronics, sensors…”
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5
Synthesis and characterization of La0.6Sr0.4Co0.8Fe0.2O3 films for solid oxide fuel cell cathodes
Published in Thin solid films (28-02-2014)“…LSCF (La0.6Sr0.4Co0.8Fe0.2O3) thick and thin films were synthesized by using a Pechini method for Solid Oxide Fuel Cell cathode realization to make symmetrical…”
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Journal Article Conference Proceeding -
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On the research of lead-free material challengers for PZT replacement
Published in Solid-state electronics (01-09-2012)“…► Lead-free materials. ► BST, BTS thin films. ► Electrical properties. ► PZT replacement. This paper reports a study of Ba0.9Sr0.1TiO3 and BaTi0.98Sn0.02O3…”
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Journal Article -
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Promising performances for a La0.6Sr0.4Co0.8Fe0.2O3-δ cathode with a dense interfacial layer at the electrode-electrolyte interface
Published in Ionics (01-08-2017)“…As for the commonly studied La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (6428), here, a very low area-specific resistance (ASR) was measured for La 0.6 Sr 0.4 Co 0.8 Fe…”
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8
Thermal Parameter Extraction of a Multilayered System by a Genetic Algorithm
Published in International journal of thermophysics (01-09-2013)“…Submicron multilayer systems are nowadays used in many common applications such as electronic systems, fuel cells, etc. A knowledge of the layer’s thermal…”
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Journal Article -
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Pyro, Ferro and Dielectric Properties of Ba0.8Sr0.2TiO3 Films Deposited by Sol-Gel on Platinized Silicon Substrates
Published in Ferroelectrics (01-01-2008)“…We report on the deposition by a sol-gel process of Ba 0.8 Sr 0.2 TiO 3 films on platinum coated silicon substrates. X-Ray diffraction patterns show that the…”
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10
Dielectric relaxations in Ba0.85Sr0.15TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by sol–gel method
Published in Journal of materials science. Materials in electronics (01-11-2016)“…This paper presents an extended analysis of dielectric relaxations in ferroelectric Ba 0.85 Sr 0.15 TiO 3 thin films deposited by a sol–gel technique on…”
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Journal Article -
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Conduction mechanisms and relaxation phenomena along with electronic transition of ZnO/ZnNb2O6/Nb2O5 composite
Published in Ceramics international (01-09-2021)“…This paper deals with the study of the physical properties of ZnO/ZnNb2O6/Nb2O5 composite. X-ray diffraction (XRD) proves the coexistence of hexagonal ZnO,…”
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Journal Article -
12
Dielectric relaxations in Ba^sub 0.85^Sr^sub 0.15^TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by sol-gel method
Published in Journal of materials science. Materials in electronics (01-11-2016)“…This paper presents an extended analysis of dielectric relaxations in ferroelectric Ba0.85Sr0.15TiO3 thin films deposited by a sol-gel technique on…”
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Journal Article -
13
Dielectric relaxations in Ba sub(0.85)Sr sub(0.15)TiO sub(3) thin films deposited on Pt/Ti/SiO sub(2)/Si substrates by sol-gel method
Published in Journal of materials science. Materials in electronics (01-11-2016)“…This paper presents an extended analysis of dielectric relaxations in ferroelectric Ba sub(0.85)Sr sub(0.15)TiO sub(3) thin films deposited by a sol-gel…”
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Journal Article -
14
Extended semiconducting behaviour of $$\hbox {Ba}_{0.85}\hbox {Sr}_{0.15}\hbox {Ti}_{0.9}\hbox {Fe}_{0.1}\hbox {O}_3$$ Ba 0.85 Sr 0.15 Ti 0.9 Fe 0.1 O 3 thick films in large temperature range
Published in Journal of materials science. Materials in electronics (01-02-2016)Get full text
Journal Article -
15
Extended semiconducting behaviour of Ba^sub 0.85^Sr^sub 0.15^Ti^sub 0.9^Fe^sub 0.1^O^sub 3^ thick films in large temperature range
Published in Journal of materials science. Materials in electronics (01-02-2016)“…(ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image) ... (BSTF) powder has been synthesized by solid-state reaction in aim to develop…”
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16
Extended semiconducting behaviour of ... thick films in large temperature range
Published in Journal of materials science. Materials in electronics (01-02-2016)“…(ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image). ... (BSTF) powder has been synthesized by solid-state reaction in aim to develop…”
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Journal Article -
17
Extended semiconducting behaviour of Ba0.85Sr0.15Ti0.9Fe0.1O3 thick films in large temperature range
Published in Journal of materials science. Materials in electronics (01-02-2016)“…Ba 0.85 Sr 0.15 Ti 0.9 Fe 0.1 O 3 (BSTF) powder has been synthesized by solid-state reaction in aim to develop lead-free semiconductor gas sensors. Thick BSTF…”
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Journal Article -
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Pyro, Ferro and Dielectric Properties of Ba 0.8 Sr 0.2 TiO 3 Films Deposited by Sol-Gel on Platinized Silicon Substrates
Published in Ferroelectrics (19-05-2008)Get full text
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Microwave study of ferroelectrics in waveguide
Published in 2008 Microwaves, Radar and Remote Sensing Symposium (01-09-2008)“…Peculiar feature of ferroelectrics is high dielectric permittivity epsiv which sometimes is accompanied by very big loss tangent tandelta. This is a reason of…”
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Conference Proceeding