P-Channel MOS Sensor for Measurement of Emergency Gamma and Neutron Irradiation

A dosemeter for mixed gamma-neutron fields using p-MOSDET with thick oxide has been designed and studied. A positive charge is stored in the gate oxide under ionising radiation, and threshold voltage shifts can be used to measure the gamma ray component. The basic material is high resistivity Si and...

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Bibliographic Details
Published in:Radiation protection dosimetry Vol. 66; no. 1-4; pp. 225 - 228
Main Authors: Litovchenko, P.G., Barabash, L.I., Kuts, V.I., Rosenfeld, A.B., Marusan, I.A., Pinkovska, M.B., Khivrich, V.I.
Format: Journal Article Conference Proceeding
Language:English
Published: Oxford Oxford University Press 01-07-1996
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Summary:A dosemeter for mixed gamma-neutron fields using p-MOSDET with thick oxide has been designed and studied. A positive charge is stored in the gate oxide under ionising radiation, and threshold voltage shifts can be used to measure the gamma ray component. The basic material is high resistivity Si and changes of forward bias of drain-base or source base curves are useful to measure the fast neutron dose. The sensitivity for gamma radiation was found to be 100 mV.Gy-1, compared to that for neutron radiation, (30 mV.Gy-1.
Bibliography:istex:565D562C3BAB3E88967EA2E2D40BDFB2219965DF
local:660225
PII:0144-8420
ark:/67375/HXZ-42X7BWKW-R
ISSN:0144-8420
1742-3406
DOI:10.1093/oxfordjournals.rpd.a031722