Search Results - "Maruno, Shigemitsu"

Surface plasmon spectroscopy of thin composite films of Au nanoparticles and PEDOT:PSS conjugated polymer by Maruno, Shigemitsu

“…We studied the effect of Au nanoparticles (NPs) on optical properties of composite films of poly(3,4-ethylenedioxythiophene): poly (styrenesulfonate)…”
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Optimization of process conditions of selective epitaxial growth for elevated source/drain CMOS transistor by Nakahata, Takumi, Sugihara, Kohei, Maruno, Shigemitsu, Abe, Yuji, Ozeki, Tatsuo

“…We studied the dependence of selective epitaxially grown silicon (SEG-Si) morphology under the conditions of ultrahigh vacuum chemical vapor deposition…”
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Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption by Watanabe, Heiji, Fujita, Shinobu, Maruno, Shigemitsu, Fujita, Ken, Ichikawa, Masakazu

“…The mechanism of electron-beam-induced selective thermal decomposition of ultrathin oxide layers on Si surfaces was studied by scanning reflection electron…”
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A Chemical Mechanism for Determining the Influence of Boron on Silicon Epitaxial Growth by Maruno, Shigemitsu, Furukawa, Taisuke, Nakahata, Takumi, Abe, Yuji

“…The mechanism of dissociative adsorption of silane on nondoped Si(100)-(2×1) and boron-doped Si(100) substrates has been studied by an empirical quantum…”
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EFFECTS OF OXYGEN VACANCY DIFFUSION ON LEAKAGE CHARACTERISTICS OF Pt/(Ba0.5Sr0.5)TiO3/Pt CAPACITOR by Maruno, S, Murao, T, Kuroiwa, T, Mikami, N, Tomikawa, A, Nagata, M

“…Authors investigated leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3(BST)/Pt capacitors by measuring current-voltage characteristics during annealing in vacuum…”
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Surface Defect Formation in Epitaxial Si Grown on Boron-Doped Substrates by Ultrahigh Vacuum Chemical Vapor Deposition by Furukawa, Taisuke, Nakahata, Takumi, Maruno, Shigemitsu, Tanimura, Junji, Tokuda, Yasunori, Satoh, Shinichi

“…We have investigated the formation mechanism of surface defects in a Si epitaxial layer grown on BF 2 + -implanted Si(100) substrates by ultrahigh vacuum…”
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Electron-beam-induced selective thermal decomposition of ultrathin SiO2 layers used in nanofabrication by WATANABE, H, FUJITA, S, MARUNO, S, FUJITA, K, ICHIKAWA, M

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Si Deposition into Fine Contact Holes by Ultrahigh-Vacuum Chemical Vapor Deposition by Nakahata, Takumi, Maruno, Shigemitsu, Yamakawa, Satoshi, Furukawa, Taisuke, Tokuda, Yasunori, Satoh, Shinichi

“…An ultrahigh-vacuum chemical vapor deposition technique with disilane (Si 2 H 6 ) molecular flux is applied to fine contact hole filling. Structural…”
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Significant Effects of As Ion Implantation on Si-selective Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition by Furukawa, Taisuke, Nakahata, Takumi, Maruno, Shigemitsu, Tokuda, Yasunori, Satoh, Shinichi

“…The relation between As ion implantation and Si-selective epitaxy is investigated, taking account of the application of ultrahigh vacuum chemical vapor…”
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A Dual-Gate Complementary Metal-Oxide-Semiconductor Technology with Novel Self-Aligned Pocket Implantation which Takes Advantage of Elevated Source/Drain Configurations by Sugihara, Kohei, Miura, Naruhisa, Furukawa, Taisuke, Nakahata, Takumi, Oishi, Toshiyuki, Maruno, Shigemitsu, Abe, Yuji, Tokuda, Yasunori

“…A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned pocket implantation is demonstrated which takes advantage of the…”
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Inelastic Low Energy Electron Diffraction Measurements of Hydrogen Adsorbed Si (001) Surfaces: 2×1:H and 1×1: :2H by Maruno, Shigemitsu, Iwasaki, Hiroshi, Horioka, Keiji, Li, Sung-Te, Nakamura, Shogo

“…We identified the monohydride phase Si(001)2×1:H and the dihydride phase Si(001)1×1: :2H by angle resolved electron energy loss profiles and I – V curves of…”
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Silicon epitaxial growth by the radical beam of glow-discharge decomposed silane by MARUNO, S, ISU, T, OGATA, H

“…Epitaxial films of silicon on silicon were formed by the radical beam produced by glow-discharge decomposition of SiH 4 . The radical beam was effused to a…”
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Surface Plasmon Dispersions of Ag Adsorbed Si(111) Surfaces Studied by Angle-Resolved Electron Energy Loss Spectroscopy by Horioka, Keiji, Iwasaki, Hiroshi, Maruno, Shigemitsu, Li, Sung Te, Nakamura, Shogo

“…Surface plasmon dispersions (SPD) on clean Si(111)7×7 and three Ag adsorbed surfaces, RT deposited, √3-, and 3×1-structured surfaces were measured. The SPD on…”
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Enhancement of Surface Plasmon excitation by Low-Energy Electron due to Surface Resonance on Si (001)–2×1 by Horioka, Keiji, Iwasaki, Hiroshi, Ichimiya, Ayahiko, Maruno, Shigemitsu, Li, Sung Te, Nakamura, Shogo

“…ILEED measurements by electron energy analyser were performed to investigate the diffraction effect on inelastic scattering related to surface and bulk plasmon…”
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Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface by Iwasaki, Hiroshi, Maruno, Shigemitsu, Horioka, Keiji, Li, Sung Te, Nakamura, Shogo

“…Inelastic low-energy-electron-diffraction measurements on a clean Si(001)-2×1 surface were made. Surface cleanliness was verified by Auger analysis. The…”
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Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors by Maruno, Shigemitsu, Abe, Yuji, Ozeki, Tatsuo, Nakamoto, Takahiro, Yoshida, Naohito

“…The surface electronic properties of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors were investigated by isothermal capacitance transient…”
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Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition by Nakahata, Takumi, Yamamoto, Kazuma, Maruno, Shigemitsu, Inagaki, Toru, Sugihara, Kohei, Abe, Yuji, Miyamoto, Atushi, Ozeki, Tatsuo

“…We studied the dependence of selective epitaxially grown silicon (SEG-Si) shape on the conditions of ultra-high vacuum chemical vapor deposition using disilane…”
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Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth by Nakahata, Takumi, Yamamoto, Kazuma, Tanimura, Junji, Inagaki, Toru, Furukawa, Taisuke, Maruno, Shigemitsu, Tokuda, Yasunori, Miyamoto, Atushi, Satoh, Shinichi, Kiyama, Hiromi

“…We studied the influence of plasma etching damage on epitaxial Si growth using ultrahigh vacuum chemical vapor deposition. The damaged layer induced on…”
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Drivability improvement on deep-submicron MOSFETs by elevation of source/drain regions by Yamakawa, S., Sugihara, K., Furukawa, T., Nishioka, Y., Nakahata, T., Abe, Y., Maruno, S., Tokuda, Y.

“…Deep submicron MOSFETs with elevated source/drain (S/D) structures, where S/D extension regions were partially elevated besides deep S/D regions, were…”
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Selective Epitaxial Growth by Ultrahigh-Vacuum Chemical Vapor Deposition with Alternating Gas Supply of Si 2 H 6 and Cl 2 by Maruno, Shigemitsu, Nakahata, Takumi, Furukawa, Taisuke, Tokuda, Yasunori, Satoh, Shinichi, Yamamoto, Kazuma, Inagaki, Toru, Kiyama, Hiromi

“…Selective epitaxial growth of Si using a Si 3 N 4 mask has been carried out by ultrahigh-vacuum chemical vapor deposition with an alternating supply of…”
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