Search Results - "Martovitsky, V. P."

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  1. 1

    Direct evidence of two superconducting gaps in FeSe0.5Te0.5: SnS-Andreev spectroscopy and the lower critical field by Kuzmicheva, T. E., Kuzmichev, S. A., Sadakov, A. V., Muratov, A. V., Usoltsev, A. S., Martovitsky, V. P., Shipilov, A. R., Chareev, D. A., Mitrofanova, E. S., Pudalov, V. M.

    Published in JETP letters (01-12-2016)
    “…We present direct measurements of the superconducting order parameter in nearly optimal FeSe Te single crystals with the critical temperature T C ≈ 14 K. Using…”
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    Journal Article
  2. 2

    Formation of nonuniformity in ZnSe/ZnMgSSe quantum well structures during MOVPE on GaAs(001) misoriented by 10° to (111)A plane by Kozlovsky, V.I., Martovitsky, V.P.

    Published in Physica. B, Condensed matter (15-12-2009)
    “…ZnSe/ZnMgSSe quantum well structures grown by metal-organic vapor-phase epitaxy on GaAs substrate misoriented from (001) to (111)A by 10° were studied…”
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    Journal Article Conference Proceeding
  3. 3

    Polarization-Dependent Filamentation of Femtosecond Laser Pulses in Synthetic Diamond by Krasin, G. K., Stsepuro, N. G., Martovitsky, V. P., Kovalev, M. S.

    Published in Optics and spectroscopy (01-08-2023)
    “…The filamentation process inside of the bulk of type Ila synthetic diamond with known crystallographic orientation has been studied as a function of the…”
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    Journal Article
  4. 4

    Room-temperature tunable mid-infrared lasers on transition-metal doped II-VI compound crystals grown from vapor phase by Kozlovsky, V. I., Akimov, V. A., Frolov, M. P., Korostelin, Yu. V., Landman, A. I., Martovitsky, V. P., Mislavskii, V. V., Podmar'kov, Yu. P., Skasyrsky, Ya. K., Voronov, A. A.

    Published in physica status solidi (b) (01-06-2010)
    “…Seeded free growth method with physical transport was used for preparation of large‐size II–VI single crystals uniformly doped by transition metals directly…”
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    Journal Article
  5. 5

    Giant Magnetostriction of Bi2Sr2 –xLaxCuO6 + δ (x = 0.8) Single Crystal by Krynetskii, I. B., Moskvin, A. S., Martovitsky, V. P., Shabanova, N. P., Gavrilkin, S. Yu, Varlashkin, A. V.

    Published in Bulletin of the Lebedev Physics Institute (01-02-2023)
    “…The giant magnetostriction of the Bi 2 Sr 2 – x La x CuO 6 + δ (La-Bi2201) single crystal at x = 0.8 is first detected for the low-temperature region. This…”
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    Journal Article
  6. 6

    Cd diffusion in CdS/ZnSe MQW heterostructures grown by MOVPE for semiconductor disk lasers by Butaev, M.R., Kozlovsky, V.I., Martovitsky, V.P., Skasyrsky, Y.K., Sviridov, D.E.

    Published in Journal of alloys and compounds (05-11-2021)
    “…•Multi quantum well CdS/ZnSe structures are promising for a semiconductor disk laser.•Current probe microscopy can be used to diagnose type II…”
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    Journal Article
  7. 7

    Universal Texturing Layer for High-Current HTSC Tapes by Varlashkin, A. V., Massalimov, B. I., Martovitsky, V. P.

    Published in Bulletin of the Lebedev Physics Institute (01-04-2018)
    “…The inclined substrate deposition method is used to grow MgO layers applicable to set textures incorporated in high-temperature superconductor (HTSCs) tapes…”
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    Journal Article
  8. 8

    Molecular Beam Epitaxy of Si–Ge–Sn Heterostructures for Monolithically Integrated Optoelectronic Devices Based on Silicon by Martovitsky, V. P., Aleshchenko, Yu. A., Krivobok, V. S., Muratov, A. V., Klekovkin, A. V., Mehiya, A. B.

    “…Elastically strained metastable Ge 1– x Sn x layers with molar fractions of tin of up to 0.15 are grown on Si (001) substrates. To analyze the optical…”
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    Journal Article
  9. 9

    Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers by Sadofyev, Yu. G., Martovitsky, V. P., Klekovkin, A. V., Saraykin, V. V., Vasil’evskii, I. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2015)
    “…Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer…”
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    Journal Article
  10. 10

    Features of low-temperature thermal expansion of n-type Bi2Se3 single crystals in magnetic field by Krynetskii, I. B., Shabanova, N. P., Martovitsky, V. P., Gavrilkin, S. Yu, Kovalenko, V. I., Varlashkin, A. V.

    Published in Bulletin of the Lebedev Physics Institute (01-11-2017)
    “…Tensometric study of n -type Bi 2 Se 3 single crystals in dc magnetic fields to 6 T in a temperature range of 7–23 K detected a weak negative thermal expansion…”
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    Journal Article
  11. 11

    Investigation of the thermal stability of metastable GeSn epitaxial layers by Martovitsky, V. P., Sadofyev, Yu. G., Klekovkin, A. V., Saraikin, V. V., Vasil’evskii, I. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-11-2016)
    “…A stack of five elastically strained metastable GeSn layers with a thickness of 200 nm each separated by Ge spacer layers with a thickness of 20 nm is grown on…”
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    Journal Article
  12. 12

    MOVPE growth and characterization of hexagonal CdS epilayers and CdS-based QW structures on CdS and ZnCdS substrates by Kozlovsky, V.I., Martovitsky, V.P., Sannikov, D.A., Kuznetsov, P.I., Yakushcheva, G.G., Jitov, V.A.

    Published in Journal of crystal growth (01-02-2003)
    “…Mirror-like hexagonal CdS, ZnCdS layers and CdS/ZnCdS quantum well (QW) structures have been grown on CdS(0 0 0 1) and ZnCdS(0 0 0 1) substrates by…”
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    Journal Article Conference Proceeding
  13. 13
  14. 14

    Comparative study of Bi2201 single crystals grown from solution melt and in cavities formed in KCl by Gorina, J I, Kaljushnaia, G A, Martovitsky, V P, Rodin, V V, Sentjurina, N N

    Published in Solid state communications (30-09-1998)
    “…We have established that by using different temperature gradients and temperature regimes it is possible to obtain two types of Bi2201 single crystals from the…”
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    Journal Article
  15. 15

    Nonius approach for Si1-xGex/Si(001) epitaxy characterization by Klekovkin, A.V., Martovitsky, V.P., Tsvetkov, V.A., Pershina, E.A.

    Published in Journal of crystal growth (15-01-2023)
    “…•Two-period structures Si1-xGex/Si/Si1-xGex/Si were grown by molecular beam epitaxy.•X-ray methods revealed difference between first and second period…”
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    Journal Article
  16. 16

    Synthesis and characterization of niobium carbide thin films on diamond surface for superconductive application by Khmelnitsky, R.A., Martovitsky, V.P., Bondareva, J.V., Kolbatova, A.I., Titova, N.A., Goltsman, G.N., Fedorov, F.S., Egorov, A.V., Matsokin, N.A., Kvashnin, A.G., Kvashnin, D.G., Evlashin, S.A.

    Published in Journal of alloys and compounds (05-03-2024)
    “…Diamond's unique properties make it attractive for use in a variety of industrial applications. However, this material has not found mass application in…”
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    Journal Article
  17. 17

    On the Structure of Superconducting Order Parameter in High-Temperature Fe-Based Superconductors by Kuzmicheva, T. E, Muratov, A. V, Kuzmichev, S. A, Sadakov, A. V, Aleshchenko, Yu. A, Vlasenko, V. A, Martovitsky, V. P, Pervakov, K. S, Eltsev, Yu. F, Pudalov, V. M

    Published 20-07-2017
    “…Physics-Uspekhi 60(4), 419-429 (2017) This paper discusses the synthesis, characterization, and comprehensive study of Ba-122 single crystals with various…”
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    Journal Article
  18. 18

    Direct Evidence of Two Superconducting Gaps in FeSe$_{0.5}$Te$_{0.5}$: SnS-Andreev Spectroscopy and Lower Critical Field by Kuzmicheva, T. E, Kuzmichev, S. A, Sadakov, A. V, Muratov, A. V, Usoltsev, A. S, Martovitsky, V. P, Shipilov, A. R, Chareev, D. A, Mitrofanova, E. S, Pudalov, V. M

    Published 17-05-2017
    “…JETP Letters 104, 852 (2016) We present direct measurements of the superconducting order parameter in nearly optimal FeSe$_{0.5}$Te$_{0.5}$ single crystals…”
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    Journal Article
  19. 19

    {sup 75}As NMR and XRD Study of Structural and Electronic Inhomogeneities in Ba(Fe{sub 1−x}Ni{sub x}){sub 2}As{sub 2} by Nikolaev, E. G., Lugansky, L. B., Vlasenko, V. A., Pervakov, K. S., Martovitsky, V. P., Eltsev, Yu. F., Bud’ko, S. L., Canfield, P. C.

    “…We have used {sup 75}As NMR and x-ray diffraction analysis to study the structural and electronic inhomogeneities in Ba(Fe{sub 1−x}Ni{sub x}){sub 2}As{sub 2}…”
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    Journal Article
  20. 20

    75As NMR and XRD Study of Structural and Electronic Inhomogeneities in Ba(Fe1−xNix)2As2 by Nikolaev, E. G., Lugansky, L. B., Vlasenko, V. A., Pervakov, K. S., Martovitsky, V. P., Eltsev, Yu. F., Bud’ko, S. L., Canfield, P. C.

    “…We have used 75 As NMR and x-ray diffraction analysis to study the structural and electronic inhomogeneities in Ba(Fe 1− x Ni x ) 2 As 2 crystals with x near…”
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    Journal Article