Search Results - "Martino, João A."

Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs by Agopian, Paula G. D., Martino, João A., Kobayashi, Daisuke, Simoen, Eddy, Claeys, Cor

“…In this work the proton irradiation influence on Multiple Gate MOSFETs (MuGFETs) performance is investigated. This analysis was performed through basic and…”
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The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering by Nicoletti, T., Aoulaiche, M., Almeida, L. M., Santos, S. D., Martino, J. A., Veloso, A., Jurczak, M., Simoen, E., Claeys, C.

“…The floating-body-RAM sense margin and retention-time dependence on the gate length is investigated in UTBOX devices using BJT programming combined with a…”
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Impact of Schottky contacts on p-type back enhanced SOI MOSFETs by Yojo, Leonardo S., Rangel, Ricardo C., Sasaki, Katia R.A., Ortiz-Conde, Adelmo, Martino, João A.

“…A simple model is proposed for the Back Enhanced SOI MOSFET in triode region. This model is based on a conventional MOSFET model in series with resistors and…”
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Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures by Silva, Vanessa C. P., Perina, Welder F., Martino, Joao A., Simoen, Eddy, Veloso, Anabela, Agopian, Paula G. D.

“…The analysis of vertically stacked nanosheet (NS) n-type transistors with two different metal gate-stacks (with a total thickness of 7.5 and 4.7 nm) is…”
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GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes by Oliveira, Alberto V., Simoen, Eddy, Mitard, Jerome, Agopian, Paula G. D., Martino, Joao A., Langer, Robert, Witters, Liesbeth J., Collaert, Nadine, Thean, Aaron, Claeys, Cor

“…This letter characterizes the generation- recombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first…”
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Proposal of a process design methodology of Fully depleted SOI nMOSFET using only three photolithograph steps for educational application by Rangel, Ricardo C., Martino, Joao A.

“…This paper presents, for the first time in Latin America, a simple process design methodology of Fully Depleted (FD) Silicon-On-Insulator (SOI) nMOSFET for…”
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Drain induced barrier thinning on TFETs with different source/drain engineering by Martino, Marcio D. V., Martino, Joao A., Agopian, Paula G. D.

“…The goal of this work is to study the effect of high drain voltage bias on short channel devices of tunnel field effect transistors (TFETs). This work will…”
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Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs by Sasaki, Katia R. A., Aoulaiche, Marc, Simoen, Eddy, Claeys, Cor, Martino, Joao A.

“…This paper investigates the silicon film thickness influence on extensionless Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic…”
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Graphene for advanced devices applications by Sivieri, Victor B., Wessely, Pia Juliane, Schwalke, Udo, Agopian, Paula G. D., Martino, Joao A.

“…In this work, the behavior of the different types of graphene transistors in relation to the number of stacked layers are investigated as well as the influence…”
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The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters by Bordallo, Caio C. M., Teixeira, Fernando F., Silveira, Marcilei A. G., Martino, Joao A., Agopian, Paula G. D., Simoen, Eddy, Claeys, Cor

“…In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage…”
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Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias by Sasaki, Katia R. A., Almeida, Luciano M., Nissimoff, Albert, Aoulaiche, Marc, Martino, Joao A., Simoen, Eddy, Claeys, Cor

“…This paper aims to analyze the band gap and the pulsed back gate bias influence on the retention time of an UTBOX SOI applied as a 1T-DRAM memory cell. This…”
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Fully electron-beam-lithography SOI FinFET by Rangel, Ricardo C., Pojar, Mariana, Seabra, Antonio C., Filho, Sebastiao G. Santos, Martino, Joao A.

“…This paper presents, for the first time in Latin America, a triple gate FinFET (also called 3D Transistor) fabrication process using only three lithograph…”
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Two-sided read window observed on UTBOX SOI 1T-DRAM by Nissimoff, Albert, Sasaki, Katia R. A., Aoulaiche, Marc, Martino, Joao A., Simoen, Eddy, Claeys, Cor

“…This paper analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate…”
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Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction by Teixeira, Fernando F., Bordallo, Caio C. M., Silveira, Marcilei A. G., Agopian, Paula G. D., Martino, Joao A., Simoen, Eddy, Claeys, Cor

“…In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are…”
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Experimental Analysis of MISHEMT Multiple Conductions from 200K to 450K by Perina, Welder F., Martino, Joao A., Agopian, Paula G. D.

“…In this work, the multiple conductions of a GaN based Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) when operating in a temperature…”
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Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms by Canales, Bruno G., Martino, Joao A., Agopian, Paula G. D.

“…The drain current in the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) is studied as a function of AlGaN barrier layer thickness,…”
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Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs by de Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…In this paper the Omega-gate nanowire (NW) transistor applied for designing Operational Transconductance Amplifier (OTA) is studied, focusing mainly on the…”
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Uniaxially strained silicon influence on Two-stage Operational Transconductance Amplifiers designed with SOI FinFET's by Ribeiro, Arllen D. R., Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…This paper analyzes the influence of uniaxially strained silicon on two-stage operational transconductance amplifiers (OTA) designed with SOI FinFETs. The OTA…”
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Trade-off between channel length and mechanical stress in the Operational Transconductance Amplifier designed with SOI FinFET by Ribeiro, Arllen D. R., Araujo, Gustavo V., Martino, Joao A., Agopian, Paula G. D.

“…In this paper, the trade-off between transistor channel length and the presence (or not) of the uniaxially strained SOI FinFETs for designing Operational…”
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Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET by Ramos, Daniel A., Sasaki, Katia R. A., Rangel, Ricardo C., Duarte, Pedro H., Martino, Joao A.

“…This paper studies experimentally the influence of the N+ doped source/drain regions on the back enhanced with separate contacts SOI MOSFET ( BE SOI SC MOSFET)…”
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