Search Results - "Martinelli, U."

Growth and optimization of extremely high-pulse-power graded-index separate confinement heterostructure quantum well AlGaAs/InGaAs diode lasers with broadened waveguides by LI, J. Z, MARTINELLI, R. U, KHALFIN, V. B, SHELLENBARGER, Z, BRAUN, A. M, CAPEWELL, D, WILLNER, B. I, ABELES, J. H

“…Material quality is an essential prerequisite and a major challenge for the fabrication of high-power, 980-nm, strained-quantum-well (SQW) InGaAs lasers. We…”
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Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique by KUMAR, R. J, GUTMANN, R. J, BORREGO, J. M, DUTTA, P. S, WANG, C. A, MARTINELLI, R. U, NICHOLS, G

“…Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk and surface recombination parameters…”
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Optical-pumping injection cavity (OPIC) mid-IR "W" lasers with high efficiency and low loss by Bewley, W.W., Felix, C.L., Vurgaftman, I., Stokes, D.W., Meyer, J.R., Lee, H., Martinelli, R.U.

“…We report an edge-emitting mid-infrared (IR) (/spl lambda/=3.3-3.7 μm) "W" laser incorporating an optical-pumping injection cavity (OPIC). The active region of…”
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Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves by Kim, J. G., Shterengas, L., Martinelli, R. U., Belenky, G. L., Garbuzov, D. Z., Chan, W. K.

“…We have characterized 2.5-μm-wavelength InGaAsSb/AlGaAsSb/GaSb two-quantum-well diode lasers that emit 1 W continuous waves from a 100-μm-wide aperture at a…”
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Mid-infrared photonic-crystal distributed-feedback lasers by Bewley, W.W., Felix, C.L., Vurgaftman, I., Bartolo, R.E., Lindle, J.R., Meyer, J.R., Lee, H., Martinelli, R.U.

“…Photonic-crystal distributed-feedback (PCDFB) lasers have the potential to provide near-diffraction-limited, spectrally pure sources of midwave-infrared…”
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High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers by Kim, J. G., Shterengas, L., Martinelli, R. U., Belenky, G. L.

“…We have fabricated and characterized 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm…”
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Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers by Bewley, W.W., Vurgaftman, I., Bartolo, R.E., Jurkovic, M.J., Felix, C.L., Meyer, J.R., Lee, H., Martinelli, R.U., Turner, G.W., Manfra, M.J.

“…The far-field characteristics of mid-infrared angled-grating distributed-feedback (/spl alpha/-DFB) lasers with W active regions are studied as a function of…”
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Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-well laser by Morris, N.A., Connolly, J.C., Martinelli, R.U., Abeles, J.H., Cook, A.L.

“…We have developed single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum well lasers as sources for O 2 sensing through laser absorption spectroscopy…”
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High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers by Al-Muhanna, A., Mawst, L. J., Botez, D., Garbuzov, D. Z., Martinelli, R. U., Connolly, J. C.

“…By incorporating a broad transverse waveguide (1.3 μm) in 0.97-μm-emitting InGaAs(P)/InGaP/GaAs separate-confinement-heterostructure quantum-well diode-laser…”
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High-brightness mid-infrared photonic-crystal distributed-feedback lasers by FELIX, C. L., VURGAFTMAN, I., BEWLEY, W. W., BARTOLO, R. E., LINDLE, J. R., MEYER, J. R., LEE, H., MARTINELLI, R. U.

“…The far-field emission and spectral characteristics of a photonic-crystal distributed-feedback (PCDFB) laser with an antimonide type-II 'W' active region were…”
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Laser diode based oxygen sensing: A comparison of VCSEL and DFB laser diodes emitting in the 762 nm region by Weldon, V., O'Gorman, J., Pérez-Camacho, J.J., McDonald, D., Hegarty, J., Connolly, J.C., Morris, N.A., Martinelli, R.U., Abeles, J.H.

“…The performance of VCSEL and DFB laser diodes for spectroscopic based high sensitivity oxygen sensing is compared. Detectivities of < 20 ppm m using the DFB…”
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Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers by BOUR, D. P, MARTINELLI, R. U, GILBERT, D. B, ELBAUM, L, HARVEY, M. G

“…The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000…”
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Type-II antimonide quantum wells for mid-infrared lasers by Yang, M.J., Meyer, J.R., Bewley, W.W., Felix, C.L., Vurgaftman, I., Barvosa-Carter, W., Whitman, L.J., Bartolo, R.E., Stokes, D.W., Lee, H., Martinelli, R.U.

“…This paper discusses some of the key MBE growth issues for type-II Sb-based lasers, and present a summary of our recent progress towards the realization of…”
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Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K by Bewley, W. W., Lee, H., Vurgaftman, I., Menna, R. J., Felix, C. L., Martinelli, R. U., Stokes, D. W., Garbuzov, D. Z., Meyer, J. R., Maiorov, M., Connolly, J. C., Sugg, A. R., Olsen, G. H.

“…Mid-infrared (λ=3.25 μm) broadened-waveguide diode lasers with active regions consisting of 5 type-II “W” quantum wells operated in continuous-wave (cw) mode…”
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1.95-μm strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers by Martinelli, R.U., Menna, R.J., Olsen, G.H., Vermaak, J.S.

“…Distributed-feedback emission from strained InGaAs-InGaAsP-InP quantum well lasers has been examined over a temperature range of 130 K to 300 K. Continuous…”
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High-power 2.3-μm GaSb-based linear laser array by Shterengas, L., Belenky, G.L., Gourevitch, A., Donetsky, D., Kim, J.G., Martinelli, R.U., Westerfeld, D.

“…High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide…”
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2.6 μm InGaAs photodiodes by MARTINELLI, R. U, ZAMEROWSKI, T. J, LONGEWAY, P. A

“…We have developed In0.82Ga0.18As p-n homojunction photodiodes that have a long-wavelength threshold at about 2.65 μm. A compositionally graded InxGa1−xAs layer…”
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High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking by Bewley, W. W., Felix, C. L., Vurgaftman, I., Stokes, D. W., Aifer, E. H., Olafsen, L. J., Meyer, J. R., Yang, M. J., Shanabrook, B. V., Lee, H., Martinelli, R. U., Sugg, A. R.

“…Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at λ=3.0 μm and 210 K at λ=6.1…”
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2.78 μm InGaAsSb/AlGaAsSb multiple quantum-well lasers with metastable InGaAsSb wells grown by molecular beam epitaxy by Lee, H., York, P.K., Menna, R.J., Martinelli, R.U., Garbuzov, D., Narayan, S.Y.

“…Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n +− GaSb(100) substrates by…”
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Midinfrared “W” diode lasers with improved electrical characteristics by Kim, M., Bewley, W. W., Lindle, J. R., Kim, C. S., Vurgaftman, I., Meyer, J. R., Kim, J. G., Martinelli, R. U.

“…Midinfrared “W” quantum-well diode lasers with reduced turn-on voltages are reported. Devices with coated facets operated in continuous-wave mode up to 195 K,…”
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