Search Results - "Marsman, Charles J."

Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors by Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert

“…Trimethylindium (TMI), in spite of being a solid, has remained the precursor of choice for the deposition of indium containing layers by MOVPE. However,…”
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Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditions by Shenai-Khatkhate, Deodatta V., Ware, Robert A., DiCarlo, Ronald L., Polcari, Robert F., Marsman, Charles J., Woelk, Egbert, Keiter, Alan G.

“…Trimethylindium (TMI) is the preferred precursor for the deposition of indium containing layers by organo-metallic vapor phase epitaxy (OMVPE) because of its…”
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Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine by Shenai, Deodatta V., Timmons, Michael L., DiCarlo, Ronald L., Marsman, Charles J.

“…Trimethylindium (TMI) and tertiarybutylphosphine (TBP) are an attractive combination of sources for Metalorganic vapor phase epitaxy (MOVPE) of InP-based…”
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