Search Results - "Marshall, P.W"

Review of displacement damage effects in silicon devices by Srour, J.R., Marshall, C.J., Marshall, P.W.

“…This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices…”
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Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM by Heidel, D.F., Marshall, P.W., LaBel, K.A., Schwank, J.R., Rodbell, K.P., Hakey, M.C., Berg, M.D., Dodd, P.E., Friendlich, M.R., Phan, A.D., Seidleck, C.M., Shaneyfelt, M.R., Xapsos, M.A.

“…Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results…”
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An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs by Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

“…We investigate transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs. The approach is based on the inclusion of an alternate…”
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Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future by Reed, R.A., Kinnison, J., Pickel, J.C., Buchner, S., Marshall, P.W., Kniffin, S., LaBel, K.A.

“…Over the past 27 years, or so, increased concern over single-event effects (SEEs) in spacecraft systems has resulted in research, development, and engineering…”
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3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines by Xiaoyun Wei, Tong Zhang, Guofu Niu, Varadharajaperumal, M., Cressler, J.D., Marshall, P.W.

“…This work presents 3-D mixed-mode simulation results of single event transients (SET) in SiGe HBT emitter followers. The impact of circuit design parameters,…”
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Laser-Induced Current Transients in Silicon-Germanium HBTs by Pellish, J.A., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P., Sutton, A.K., Diestelhorst, R.M., Phillips, S.D., Cressler, J.D., Pouget, V., Pate, N.D., Kozub, J.A., Mendenhall, M.H., Weller, R.A., Schrimpf, R.D., Marshall, P.W., Tipton, A.D., Niu, G.

“…Device-level current transients are induced by injecting carriers using two-photon absorption from a subbandgap pulsed laser and recorded using wideband…”
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Lateral Diffusion Length Changes in HgCdTe Detectors in a Proton Environment by Hubbs, J.E., Marshall, P.W., Marshall, C.J., Gramer, M.E., Maestas, D., Garcia, J.P., Dole, G.A., Anderson, A.A.

“…This paper presents a study of the performance degradation in a proton environment of long wavelength infrared (LWIR) HgCdTe detectors. The energy dependence…”
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3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector by Varadharajaperumal, M., Guofu Niu, Xiaoyun Wei, Tong Zhang, Cressler, J.D., Reed, R.A., Marshall, P.W.

“…This paper presents a SEU hardening approach that uses a dummy collector to reduce charge collection in the main transistor. The dummy collector is obtained…”
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Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs by Montes, E.J., Reed, R.A., Pellish, J.A., Alles, M.L., Schrimpf, R.D., Weller, R.A., Varadharajaperumal, M., Niu, G., Sutton, A.K., Diestelhorst, R., Espinel, G., Krithivasan, R., Comeau, J.P., Cressler, J.D., Marshall, P.W., Vizkelethy, G.

“…Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a…”
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A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs by Sutton, A.K., Haugerud, B.M., Prakash, A.P.G., Bongim Jun, Cressler, J.D., Marshall, C.J., Marshall, P.W., Ladbury, R., Guarin, F., Joseph, A.J.

“…We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc figures-of-merit are used to quantify the…”
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A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations by Pellish, J.A., Reed, R.A., Sutton, A.K., Weller, R.A., Carts, M.A., Marshall, P.W., Marshall, C.J., Krithivasan, R., Cressler, J.D., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Sierawski, B.D., Niu, G.F.

“…This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published…”
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Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology by Madan, A., Phillips, S.D., Cressler, J.D., Marshall, P.W., Qingqing Liang, Freeman, G.

“…The effects of 63 MeV proton irradiation on 65 nm Silicon-On-Insulator (SOI) CMOS technology are presented for the first time. The radiation response of the…”
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Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology by Bellini, M., Phillips, S.D., Diestelhorst, R.M., Cheng, P., Cressler, J.D., Marshall, P.W., Turowski, M., Avenier, G., Chantre, A., Chevalier, P.

“…We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations…”
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A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References by Najafizadeh, L., Sutton, A.K., Diestelhorst, R.M., Bellini, M., Bongim Jun, Cressler, J.D., Marshall, P.W., Marshall, C.J.

“…A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on (1) total ionizing dose (TID), (2)…”
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The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI by Bellini, M., Bongim Jun, Sutton, A.K., Appaswamy, A.C., Peng Cheng, Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Fleetwood, D.M., El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H.

“…The impact of 63.3 MeV proton and 10 keV X-ray irradiation on the DC and AC performance of complementary SiGe HBTs on thick-film SOI is investigated. Proton…”
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Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates by Marshall, P.W., Carts, M.A., Campbell, A., McMorrow, D., Buchner, S., Stewart, R., Randall, B., Gilbert, B., Reed, R.A.

“…This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this…”
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The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology by Diestelhorst, R.M., Finn, S., Bongim Jun, Sutton, A.K., Peng Cheng, Marshall, P.W., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

“…We investigate the effects of both X-ray and proton irradiation on a novel 200 GHz/90 GHz (npn/pnp) complementary SiGe:C HBT technology. The DC forward mode…”
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The Effects of Proton Irradiation on the Performance of High-Voltage n-MOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform by Najafizadeh, L., Tuan Vo, Phillips, S.D., Peng Cheng, Wilcox, E.P., Cressler, J.D., Mojarradi, M., Marshall, P.W.

“…This paper presents the first comprehensive investigation of the impact of proton irradiation on the performance of high-voltage (HV) nMOS transistors…”
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On the Radiation Tolerance of SiGe HBT and CMOS-Based Phase Shifters for Space-Based, Phased-Array Antenna Systems by Thrivikraman, T.K., Peng Cheng, Phillips, S.D., Comeau, J.P., Morton, M.A., Cressler, J.D., Papapolymerou, J., Marshall, P.W.

“…We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space-based, phased-array antennas used in radar or wireless…”
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Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs by Sutton, A.K., Haugerud, B.M., Yuan Lu, Wei-Min Lance Kuo, Cressler, J.D., Marshall, P.W., Reed, R.A., Jae-Sung Rieh, Freeman, G., Ahlgren, D.

“…We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity…”
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