Search Results - "Marmiroli, A."

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  1. 1

    Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices by Fantini, P., Ghetti, A., Marinoni, A., Ghidini, G., Visconti, A., Marmiroli, A.

    Published in IEEE electron device letters (01-12-2007)
    “…The magnitude of a random telegraph signal (RTS) in nanoscale floating-gate devices has been experimentally investigated as a function of carrier…”
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    Journal Article
  2. 2

    A new compact DC model of floating gate memory cells without capacitive coupling coefficients by Larcher, L., Pavan, P., Pietri, S., Albani, L., Marmiroli, A.

    Published in IEEE transactions on electron devices (01-02-2002)
    “…This paper presents for the first time a new compact SPICE model of floating gate nonvolatile memory cells capable to reproduce effectively the complete DC…”
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    Journal Article
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    TEM/CBED determination of strain in silicon-based submicrometric electronic devices by Armigliato, A, Balboni, R, Balboni, S, Frabboni, S, Tixier, A, Carnevale, G.P, Colpani, P, Pavia, G, Marmiroli, A

    Published in Micron (Oxford, England : 1993) (01-06-2000)
    “…The convergent beam electron diffraction technique (CBED) of the transmission electron microscopy (TEM) has been employed to determine the strain distribution…”
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    Journal Article
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    Influence of the silicon nitride oxidation on the performances of NCLAD isolation by Tixier, A., Senez, V., Baccus, B., Marmiroli, A., Colpani, P., Rebora, A., Carnevale, G.P.

    Published in Microelectronics and reliability (01-05-1998)
    “…In order to study NCLAD isolation structures, a silicon nitride oxidation model has been studied and implemented in the process simulation program IMPACT-4…”
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    Journal Article
  13. 13

    Process Analysis using RSM and Simulation by Cecchetti, M., Lissoni, M., Lombardi, C., Marmiroli, A.

    “…In this paper a statistical analysis of an advanced CMOS process performed using the Response Surface Method (RSM) applied to process/device simulation is…”
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    Conference Proceeding
  14. 14

    Aluminum Thinning onto Blanket and Etched Back Tungsten Plugs: Simulation of Geometrical Effects by Marangon, M.S., De Santi, G., Marmiroli, A., Pasinetti, R.

    “…The blanket and etch back technique has been been introduced successfully in process flows for vias and contact holes filling. The possibility of application…”
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    Conference Proceeding
  15. 15

    Modeling of STI-induced stress phenomena in CMOS 90nm Flash technology by Fantini, P., Giuga, G., Schippers, S., Marmiroli, A., Ferrari, G.

    “…A non negligible layout sensitivity of MOSFETS electrical behavior has been recently observed in advanced CMOS technologies. Some efforts have been attempted…”
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    Conference Proceeding
  16. 16

    Modeling the VTH fluctuations in nanoscale Floating Gate memories by Calderoni, A., Fantini, P., Ghetti, A., Marmiroli, A.

    “…Tight bits distribution is a must to fabricate multi-level Non-Volatile Memory (NVM) technology needed to reach a high degree of integration. On the contrary,…”
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    Conference Proceeding
  17. 17

    Implementation of nitride oxidation in the 2D process simulator IMPACT-4 by Tixier, A., Senez, V., Baccus, B., Marmiroli, A.

    “…To shrink the dimension of devices, new isolation technologies, with respect to classical LOCOS, have to be evaluated. This paper deals with the study of one…”
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    Conference Proceeding
  18. 18

    Device simulation for smart integrated systems (DESSIS) by Baccarani, G., Rudan, M., Lorenzini, M., Fichtner, W., Litsios, J., Schenk, A., van Staa, P., Kaeser, L., Kampmann, A., Marmiroli, A., Sala, C., Ravanelli, E.

    “…In this paper we present the most important achievements of the ESPRIT 6075 (DESSIS) Project, which was carried out in the period 1992-1995 with the…”
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    Conference Proceeding
  19. 19

    Influence of the Silicon Nitride Oxidation on the Performances of NCLAD Isolation by Tixier, A., Senez, V., Baccus, B., Marmiroli, A., Carnevale, G.P., Colpani, P., Rebora, A.

    “…A Deal and Grove model for the oxidation of the nitride isolation masks has been found, and has been implemented in the 2D Process simulator IMPACT-4 [2]. This…”
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    Conference Proceeding