New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes

We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially prepared porous n + -InP and n + -GaAs substrates. The structural properties of epitaxial layers and output parameters of the Gunn diodes made o...

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Bibliographic Details

Published in:	2005 15th International Crimean Conference Microwave & Telecommunication Technology Vol. 2; pp. 633 - 634 Vol. 2
Main Authors:	Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya, Milenin, V.V., Taraso, I.S., Markovsky, E.P., Rusu, E.V.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2005
Subjects:	Buffer layers Epitaxial layers Gallium arsenide Gold Gunn devices Indium phosphide Ohmic contacts Physics Semiconductor diodes Substrates
Online Access:	Get full text
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