Simulated exposure of titanium dioxide memristors to ion beams

The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin...

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Bibliographic Details
Published in:	Nuclear Technology and Radiation Protection Vol. 25; no. 2; pp. 120 - 125
Main Authors:	Marjanović Nada S., Vujisić Miloš Lj, Stanković Koviljka Đ., Despotović Dejan, Osmokrović Predrag V.
Format:	Journal Article
Language:	English
Published:	VINCA Institute of Nuclear Sciences 01-09-2010
Subjects:	ion beam memristor Monte Carlo simulation titanium dioxide
Online Access:	Get full text
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Summary:	The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality.
ISSN:	1451-3994
DOI:	10.2298/NTRP1002120M