Search Results - "Marino, Fabio Alessio"

Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo Study by Marino, Fabio Alessio, Saraniti, Marco, Faralli, Nicolas, Ferry, David K, Goodnick, Stephen M, Guerra, Diego

“…This paper aims to investigate the potential of the emerging N-face technology with respect to both the direct current and radio frequency performance of GaN…”
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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs by Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS- high electron…”
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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors by Marino, F.A., Faralli, N., Palacios, T., Ferry, D.K., Goodnick, S.M., Saraniti, M.

“…This brief aims to show the effects of threading edge dislocations on the DC and RF performance of GaN high-electron mobility transistor (HEMT) devices. A…”
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A Novel Charger Architecture for Resonant Wireless Power Transfer by Carobolante, Francesco, Menegoli, Paolo, Marino, Fabio Alessio, Jeong, Nathan Seongheon

“…Conventional wireless chargers typically utilize a traditional architecture in the receiver to convert RF signals to dc power, which includes rectification of…”
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Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications by Marino, Fabio Alessio, Stocco, Antonio, Barbato, Marco, Zanoni, Enrico, Meneghesso, Gaudenzio

“…A novel field-effect device for high-density integrated circuits has been developed and manufactured. Numerical device simulations have also been carried out…”
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Double-Halo Field-Effect Transistor-A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits by Marino, F. A., Meneghesso, G.

“…In this paper, an extensive description of the main characteristics and possible applications of a double-halo metal-oxide-semiconductor (MOS) device is…”
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Multifunctional Field-Effect Transistor for High-Density Integrated Circuits by Marino, F A, Meneghesso, G

“…A multifunctional field-effect transistor (FET) for the manufacturing of high-density integrated circuits (ICs) has been developed and fabricated. Furthermore,…”
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Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs by Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. M., Marino, F. A.

“…The effect of the passivation layer dielectric constant and T-gate geometry on the performance of millimeter-wave high-power GaN HEMTs is investigated through…”
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Comparison of N- and Ga-Face GaN HEMTs Through Cellular Monte Carlo Simulations by Guerra, D, Saraniti, M, Faralli, N, Ferry, D K, Goodnick, S M, Marino, F A

“…We compare the performance of GaN HEMT devices based on the established Ga-face technology and the emerging N-face technology. Starting from a state-of-the-art…”
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Effects of Threading Dislocations on AIGaN/GaN High-Electron Mobility Transistors by ALESSIO MARINO, Fabio, FARALLI, Nicolas, PALACIOS, Tomás, FERRY, David K, GOODNICK, Stephen M, SARANITI, Marco

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Breakdown investigation in GaN-based MIS-HEMT devices by Marino, Fabio Alessio, Bisi, Davide, Meneghini, Matteo, Verzellesi, Giovanni, Zanoni, Enrico, Van Hove, Marleen, You, Shuzhen, Decoutere, Stefaan, Marcon, Denis, Stoffels, Steve, Ronchi, Nicolo, Meneghesso, Gaudenzio

“…Breakdown mechanisms in AlGaN/GaN HEMT devices are here analyzed, placing particular emphasis in the analysis of GaN based device grown on silicon substrate…”
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Advance simulation methods for physical investigation of high electron mobility transistors by Marino, Fabio Alessio

“…In this work, an accurate analysis of state-of-the-art high-frequency and high-power High Electron Mobility Transistor (HEMT) devices was performed by using…”
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Reliability assessment of state-of-the-art GaN HEMT by means of cellular Monte Carlo Simulation by Marino, F A, Guerra, D, Goodnick, S M, Saraniti, M

“…Here we discuss how Monte Carlo Simulations can be exploited to investigate reliability issues in GaN high electron mobility transistor (HEMT) devices. In…”
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Cellular Monte Carlo investigation of InAs and InGaAs quantum well field effect transistors by Marino, F A, Guerra, D, Ferry, D K, Goodnick, S M, Saraniti, M

“…Quantum well field effect transistors have been proposed as promising device candidates for future high-speed and low-power logic applications due to their…”
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