Overview of the radiation response of anion-based memristive devices
In this paper, we provide an overview of the current knowledge of radiation effects in anion-based memristive devices. We will specifically look at the impact of high dose rate ionizing radiation, total ionizing dose (TID), and heavy ions on the electrical characteristics of tantalum oxide (TaOx), t...
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| Published in: | 2015 IEEE Aerospace Conference pp. 1 - 11 |
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| Main Authors: | , |
| Format: | Conference Proceeding |
| Language: | English |
| Published: |
IEEE
01-03-2015
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| Subjects: | |
| Online Access: | Get full text |
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| Summary: | In this paper, we provide an overview of the current knowledge of radiation effects in anion-based memristive devices. We will specifically look at the impact of high dose rate ionizing radiation, total ionizing dose (TID), and heavy ions on the electrical characteristics of tantalum oxide (TaOx), titanium dioxide (TiO 2 ), and hafnium oxide (HfO x ) memristors. The primary emphasis, however, will be placed on TaO x memristors. While there are several other anion-based memristive devices being fabricated by the semiconductor community for possible use in valence change memories, most of the present radiation work has focused on one of these types of devices. There have also been numerous studies on radiation effects in cation-based chalcogenides such as germanium sulfides and selenides. However, that will not be discussed in this paper. |
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| ISBN: | 9781479953790 1479953792 |
| ISSN: | 1095-323X 2996-2358 |
| DOI: | 10.1109/AERO.2015.7119304 |