Search Results - "Marin, Enrique"

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  1. 1

    Novel Graph-Based Machine Learning Technique to Secure Smart Vehicles in Intelligent Transportation Systems by Gupta, Brij Bhooshan, Gaurav, Akshat, Marin, Enrique Cano, Alhalabi, Wadee

    “…Intelligent Transport Systems (ITS) is a developing technology that will significantly alter the driving experience. In such systems, smart vehicles and…”
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    Journal Article
  2. 2

    Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source by Marin, Enrique G, Marian, Damiano, Perucchini, Marta, Fiori, Gianluca, Iannaccone, Giuseppe

    Published in ACS nano (25-02-2020)
    “…The bandgap dependence on the number of atomic layers of some families of two-dimensional (2D) materials can be exploited to engineer and use lateral…”
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  3. 3

    Compact Modeling of Two-Dimensional Field-Effect Biosensors by Pasadas, Francisco, El Grour, Tarek, G Marin, Enrique, Medina-Rull, Alberto, Toral-Lopez, Alejandro, Cuesta-Lopez, Juan, G Ruiz, Francisco, El Mir, Lassaad, Godoy, Andrés

    Published in Sensors (Basel, Switzerland) (01-02-2023)
    “…A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the…”
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    Journal Article
  4. 4

    Twitter as a predictive system: A systematic literature review by Cano-Marin, Enrique, Mora-Cantallops, Marçal, Sánchez-Alonso, Salvador

    Published in Journal of business research (01-03-2023)
    “…Millions of people use Twitter daily, posting thousands of messages and interacting with their peers. This research aims to evaluate and classify the…”
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  5. 5

    A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design by Dubey, Prabhat Kumar, Strangio, Sebastiano, Marin, Enrique G., Iannaccone, Giuseppe, Fiori, Gianluca

    Published in IEEE transactions on electron devices (01-09-2023)
    “…We present a charge-based Verilog-A model for 2-D-material (2DM)-based field-effect transistors (FETs) with application in neuromorphic circuit design. The…”
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  6. 6

    Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite by Marian, Damiano, Marin, Enrique G., Perucchini, Marta, Iannaccone, Giuseppe, Fiori, Gianluca

    Published in Journal of computational electronics (01-10-2023)
    “…NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic…”
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  7. 7

    Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate by Perucchini, Marta, G. Marin, Enrique, Marian, Damiano, Iannaccone, Giuseppe, Fiori, Gianluca

    Published in Applied physics letters (29-10-2018)
    “…Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last few decades due to…”
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  8. 8

    A Flexible Laser-Induced Graphene Memristor with Volatile Switching for Neuromorphic Applications by Ganeriwala, Mohit D., Motos Espada, Roberto, Marin, Enrique G., Cuesta-Lopez, Juan, Garcia-Palomo, Mikel, Rodríguez, Noel, Ruiz, Francisco G., Godoy, Andres

    Published in ACS applied materials & interfaces (18-09-2024)
    “…Two-dimensional graphene and graphene-based materials are attracting increasing interest in neuromorphic computing applications by the implementation of…”
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  9. 9

    Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces by Calogero, Gaetano, Marian, Damiano, Marin, Enrique G., Fiori, Gianluca, Iannaccone, Giuseppe

    Published in Scientific reports (16-09-2021)
    “…Lateral heterostructures (LH) of monolayer-multilayer regions of the same noble transition metal dichalcogenide, such as platinum diselenide (PtSe 2 ), are…”
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  10. 10

    A Comprehensive Physics-Based Current-Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs by Ahsan, Sheikh Aamir, Singh, Shivendra Kumar, Yadav, Chandan, Marin, Enrique G., Kloes, Alexander, Schwarz, Mike

    Published in IEEE transactions on electron devices (01-11-2020)
    “…In this article, we report the development of a novel physics-based analytical model for explaining the current-voltage relationship in Schottky barrier (SB)…”
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  11. 11

    A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design by Ahsan, Sheikh Aamir, Singh, Shivendra Kumar, Mir, Mehak Ashraf, Perucchini, Marta, Polyushkin, Dmitry K., Mueller, Thomas, Fiori, Gianluca, Marin, Enrique G.

    Published in IEEE transactions on electron devices (01-06-2021)
    “…We report a charge-based analytic and explicit compact model for field-effect transistors (FETs) based on 2-D materials (2DMs), for the simulation of 2DM-based…”
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  12. 12

    Interfacial Phenomena Governing Performance of Graphene Electrodes in Aqueous Electrolyte by Delgà-Fernández, Marta, Toral-Lopez, Alejandro, Guimerà-Brunet, Anton, Pérez-Marín, A. Pablo, Marin, Enrique G., Godoy, Andrés, Garrido, Jose A., del Corro, Elena

    Published in Nano letters (18-09-2024)
    “…There is evidence of the presence of intercalated water between graphene and the substrate in electronic devices. However, a proper understanding of the impact…”
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  13. 13

    Drought priming alleviated salinity stress and improved water use efficiency of wheat plants by Singha, Ashutus, Soothar, Rajesh Kumar, Wang, Chao, Marín, Elio Enrique Trujillo, Tankari, Moussa, Hao, Weiping, Wang, Yaosheng

    Published in Plant growth regulation (01-03-2022)
    “…Global warming and salinization are inducing adverse effects on crop yield. Drought priming has been proved to improve drought tolerance of plants at later…”
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  14. 14

    Effective high‐quality economic growth based on human capital structure by Ma, Jinli, Montenegro‐Marin, Carlos Enrique, Crespo, Rubén González

    Published in Expert systems (01-05-2024)
    “…Nowadays, economic growth is influenced by many domestic and foreign global issues, concerning the decrease of industrial output for the rise in economic…”
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  15. 15

    Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering by Passi, Vikram, Gahoi, Amit, Marin, Enrique G., Cusati, Teresa, Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca, Lemme, Max C.

    Published in Advanced materials interfaces (09-01-2019)
    “…A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well‐defined edge…”
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  16. 16

    Flexible One-Dimensional Metal–Insulator–Graphene Diode by Wang, Zhenxing, Uzlu, Burkay, Shaygan, Mehrdad, Otto, Martin, Ribeiro, Mário, Marín, Enrique González, Iannaccone, Giuseppe, Fiori, Gianluca, Elsayed, Mohamed Saeed, Negra, Renato, Neumaier, Daniel

    Published in ACS applied electronic materials (25-06-2019)
    “…A novel one-dimensional geometry for metal–insulator–graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed…”
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  17. 17

    Electrically tunable lateral spin-valve transistor based on bilayer CrI3 by Marian, Damiano, Soriano, David, Cannavó, Emmanuele, Marin, Enrique G., Fiori, Gianluca

    Published in NPJ 2D materials and applications (26-06-2023)
    “…The recent discovery of two-dimensional (2D) magnetic materials has opened new frontiers for the design of nanoscale spintronic devices. Among 2D nano-magnets,…”
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  18. 18
  19. 19

    Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors by Grour, Tarek El, Pasadas, Francisco, Medina-Rull, Alberto, Najari, Montassar, Marin, Enrique G., Toral-Lopez, Alejandro, Ruiz, Francisco G., Godoy, Andres, Jimenez, David, Mir, Lassaad El

    Published in IEEE transactions on electron devices (01-11-2021)
    “…We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on 2-D materials. The electrostatics along the…”
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  20. 20

    A Compact Charge and Surface Potential Model for III-V Cylindrical Nanowire Transistors by Ganeriwala, Mohit D., Ruiz, Francisco G., Marin, Enrique G., Mohapatra, Nihar R.

    Published in IEEE transactions on electron devices (01-01-2019)
    “…Considering the demand of III-V multigate (MUG) transistors for next-generation CMOS technologies, a compact model is required to test their performance in…”
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