Search Results - "Marin, D.V."

Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study by Ruzhevich, M.S., Mynbaev, K.D., Firsov, D.D., Chumanov, I.V., Komkov, O.S., Marin, D.V., Varavin, V.S., Yakushev, M.V.

“…Photoluminescence (PL) and photoreflectance (PR) spectroscopy were used for the optical study of arsenic doping of HgCdTe grown by molecular beam epitaxy…”
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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe by Shvets, V.A., Marin, D.V., Azarov, I.A., Yakushev, M.V., Rykhlitskii, S.V.

“…•Absolute temperature can be determined from Van-Hove singularities spectral position.•Slight changes in temperature shift interference pattern on CdTe…”
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Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride by Marin, D.V., Shvets, V.A., Azarov, I.A., Yakushev, M.V., Rykhlitskii, S.V.

“…•Molecular beam epitaxy of mercury cadmium telluride requires temperature control.•Ellipsometry is the most suitable method for in situ measuring of growth…”
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Electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te substrates by Varavin, V.S, Marin, D.V, Yakushev, M.V

“…The electrophysical properties of [Cd.sub.x][Hg.sub.1-x]Te (x ≅ 0.3) films undoped and doped with indium during their growth were investigated. The as-grown…”
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Electrical properties of the Hg0.7Cd0.3Te films grown by MBE method on Si(0 1 3) substrates by Varavin, V.S., Marin, D.V., Shefer, D.A., Yakushev, M.V.

“…•The influences of various annealings on lattice defects are established.•Annealing effects on electrical properties of the films Hg0.7Cd0.3Te are…”
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Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals by Volodin, V. A., Marin, D. V., Sachkov, V. A., Gorokhov, E. B., Rinnert, H., Vergnat, M.

“…The improved phonon confinement model developed previously [11] is applied for definition of germanium nanocrystal sizes from the analysis of its Raman…”
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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm by Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.

“…•We investigated the diodes characteristics of different types called as it is customary “p-on-n” and “n-on-p” formed in MCT heteroepitaxial structures grown…”
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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te by Izhnin, I.I., Mynbaev, K.D., Swiatek, Z., Morgiel, J., Voitsekhovskii, A.V., Korotaev, A.G., Varavin, V.S., Dvoretsky, S.A., Marin, D.V., Yakushev, M.V., Fitsych, O.I., Bonchyk, O.Yu, Savytskyy, H.V.

“…•n- and p-type samples were fabricated from a HgCdTe epitaxial film.•Both samples were implanted with arsenic in the same implantation cycle.•Optical…”
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) by Bazovkin, V.M., Dvoretsky, S.A., Guzev, A.A., Kovchavtsev, A.P., Marin, D.V., Polovinkin, V.G., Sabinina, I.V., Sidorov, G.Yu, Tsarenko, A.V., Vasil’ev, V.V., Varavin, V.S., Yakushev, M.V.

“…•Temperature dependence of the reverse currents of p+–n junctions has been studied.•SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been…”
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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy by Bonchyk, O. Yu, Savytskyy, H. V., Izhnin, I. I., Mynbaev, K. D., Syvorotka, I. I., Korotaev, A. G., Voitsekhovskii, A. V., Fitsych, O. I., Varavin, V. S., Marin, D. V., Mikhailov, N. N., Yakushev, M. V., Swiatek, Z., Morgiel, J., Jakiela, R.

“…Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions…”
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The reverse current temperature dependences of SWIR CdHgTe “p-on-n” and “n-on-p” junctions by Kovchavtsev, A.P., Guzev, A.A., Tsarenko, A.V., Panova, Z.V., Yakushev, M.V., Marin, D.V., Varavin, V.S., Vasilyev, V.V., Dvoretsky, S.A., Sabinina, I.V., Sidorov, Yu.G.

“…•The temperature dependences of the reverse current of CdxHg1−xTe of “p-on-n” and “n-on-p” junctions are presented.•Experimental data have shown close…”
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CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range by Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Marin, D. V.

“…Heteroepitaxial structures n -Cd x Hg 1 − x Te for the near-infrared spectral range ( x ≈ 0.4) are grown by molecular beam epitaxy on Si(310) substrates 72.6…”
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Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates by Mynbaev, K. D., Zablotsky, S. V., Shilyaev, A. V., Bazhenov, N. L., Yakushev, M. V., Marin, D. V., Varavin, V. S., Dvoretsky, S. A.

“…Defects in mercury-cadmium-telluride heteroepitaxial structures (with 0.3 to 0.4 molar fraction of cadmium telluride) grown by molecular-beam epitaxy on…”
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Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers by Kachurin, G.A., Cherkova, S.G., Marin, D.V., Kesler, V.G., Volodin, V.A., Skuratov, V.A.

“…Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167MeV Xe ions to the fluences…”
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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures by Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Yakushev, M. V.

“…The parameters of multilayer Cd x Hg 1–x Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE)…”
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Influence of irradiation with swift heavy ions on multilayer Si/Si[O.sub.2] heterostructures by Kachurin, G.A, Cherkova, S.G, Marin, D.V, Volodin, V.A, Cherkov, A.G, Antonenko, A. Kh, Kamaev, G.N, Skuratov, V.A

“…The influence of Xe ions with an energy of 167 MeV and a dose in the range [10.sup.12] - 3 x [10.sup.13] [cm.sup.-2] on heterostructures consisting of six…”
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Light-emitting Si nanostructures formed in Si[O.sub.2] on irradiation with swift heavy ions by Kachurin, G.A, Cherkova, S.G, Skuratov, V.A, Marin, D.V, Cherkov, A.G

“…Si[O.sub.2] layers containing implanted excess Si are irradiated with Xe ions with an energy of 130 MeV and doses of 3 x [10.sup.12]-[10.sup.14] [cm.sup.-2]…”
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Formation of light-emitting nanostructures in layers of stoichiometric Si[O.sub.2] irradiated with swift heavy ions by Kachurin, G.A, Cherkova, S.G, Skuratov, V.A, Marin, D.V, Kesler, V.G, Volodin, V.A

“…Thermally grown Si[O.sub.2] layers have been irradiated with 700-MeV Bi ions with doses of (3-10) x [10.sup.12] [cm.sup.-2]. It is found that, even after a…”
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The effect of composition on the formation of light-emitting Si nanostructures in Si[O.sub.x] layers on irradiation with swift heavy ions by Kachurin, G.A, Cherkova, S.G, Marin, D.V, Kesler, V.G, Skuratov, V.A, Cherkov, A.G

“…The Si[O.sub.x] layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose [10.sup.14] [cm.sup.-2] to…”
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Structure and optical properties of silicon nanopowders by Terekhov, V.A., Kashkarov, V.M., Turishchev, S.Yu, Pankov, K.N., Volodin, V.A., Efremov, M.D., Marin, D.V., Cherkov, A.G., Goryainov, S.V., Korchagin, A.I., Cherepkov, V.V., Lavrukhin, A.V., Fadeev, S.N., Salimov, R.A., Bardakhanov, S.P.

“…Nanopowders obtained in the work by evaporation of silicon ingot with a powerful electron beam with the energy of electrons ∼1.4 MeV in the atmosphere of Ar…”
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