Search Results - "Marcon, D"
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1
Genetic parameters for feed efficiency in Romane rams and responses to single-generation selection
Published in Animal (Cambridge, England) (01-04-2020)“…Feeding costs represent one of the highest expenditures in animal production systems. Breeding efficient animals that express their growth potential while…”
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2
Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons
Published in Applied physics letters (07-04-2014)“…This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility…”
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3
Predicting feed efficiency traits in growing lambs from their ruminal microbiota
Published in Animal (Cambridge, England) (01-06-2023)“…•The rumen microbiota was assessed to predict lamb feed efficiency and production.•Accounting for the environment is essential to predict from the rumen…”
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4
Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate
Published in IEEE electron device letters (01-02-2010)“…Ultrathin-barrier normally off AlN/GaN/AlGaN double-heterostructure field-effect transistors using an in situ SiN cap layer have been fabricated on 100-mm Si…”
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5
Short- and mid-term effects on performance, health and qualitative behavioural assessment of Romane lambs in different milk feeding conditions
Published in Animal (Cambridge, England) (01-03-2021)“…The common practice of artificially rearing lambs from prolific meat breeds of sheep constitutes a welfare issue due to increased mortality rates and negative…”
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6
FATTY ACID PROFILE IN 7–11 YEARS OLD CHILDREN ATTENDING THE PRIMARY SCHOOL IN VERONA SOUTH DISTRICT
Published in Journal of hypertension (01-07-2019)“…OBJECTIVE:Dietary and circulating fatty acids (FA) and desaturases activity, involved in FA metabolism, are associated with metabolic and cardiovascular…”
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7
MARKERS OF VASCULAR DAMAGE IN CHILDREN AND ADOLESCENTS WITH TYPE 1 DIABETES MELLITUS
Published in Journal of hypertension (01-07-2019)“…OBJECTIVE:Type 1 diabetes mellitus (T1DM) is associated with early development of atherosclerosis. The aim of this study was to measure some indices of…”
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8
Manufacturing Challenges of GaN-on-Si HEMTs in a 200 mm CMOS Fab
Published in IEEE transactions on semiconductor manufacturing (01-08-2013)“…In this paper, we report on the challenges related to growth and processing of 200 mm GaN-on-Si wafers in a CMOS fab. We describe the Au free process we…”
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9
Lupin (Lupinus spp.) seeds exert anthelmintic activity associated with their alkaloid content
Published in Scientific reports (21-06-2019)“…The growing range of drug resistant parasitic nematode populations threatens the sustainability of ruminant farming worldwide. In this context, nutraceuticals,…”
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10
AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics
Published in Applied physics letters (11-11-2013)“…AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked AlxGa1−xN layers were investigated using Raman thermography…”
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11
Does Treatment for Obstructive Sleep Apnoea Improve Arterial Stiffness? Evidence from Randomized Clinical Trials on Carotid-femoral Pulse Wave Velocity
Published in Artery research (01-03-2021)“…Obstructive Sleep Apnoea (OSA) is a breathing disorder characterized by narrowing of the upper airway that impairs normal ventilation during sleep. OSA is a…”
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12
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop
Published in Microelectronics and reliability (01-09-2012)“…In this work we report on the two most common failure modes for AlGaN/GaN-based HEMTs: the gate leakage increase and the output current drop. First, by…”
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13
Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation
Published in IEEE electron device letters (01-09-2010)“…A novel normally-off AIN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMT) on 100-mm Si substrates for high-power applications is…”
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14
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors
Published in Microelectronics and reliability (01-09-2012)“…Properties of stress-induced percolation paths in AlGaN in step-stressed AlGaN/GaN high electron mobility transistors are investigated in details. DC and…”
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15
GaN-based HEMTs tested under high temperature storage test
Published in Microelectronics and reliability (01-09-2011)“…► We assessed the impact of high temperature storage test on GaN HEMTs. ► We observed that only the gate and drain leakage currents were strongly affected by…”
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16
Effectiveness of a personalized rehabilitation-reconditioning program in brain tumors
Published in Annals of physical and rehabilitation medicine (01-09-2015)“…Objective Exercise behavior has shown its interest in cancers and may have a prognosis value in brain tumors [1] . The aim of this prospective study is to show…”
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17
GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01-12-2019)“…We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN…”
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Conference Proceeding -
18
STATISTICAL ANALYSIS OF PROPERTIES OF HIGH-VOLUME FLY ASH CONCRETES AS CEMENT REPLACEMENT
Published in Holos (Natal, RN) (01-01-2020)“…The use of mineral additives as a substitute for Portland cement reduces the consumption of cement in the production of concrete, thus reducing the emission of…”
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Maternal polymorphisms in the FADS1 and FADS2 genes modify the association between PUFA ingestion and plasma concentrations of omega-3 polyunsaturated fatty acids
Published in Prostaglandins, leukotrienes and essential fatty acids (01-11-2019)“…•Our results suggest a possible gene-nutrient interaction in maternal plasma concentrations of n−3 PUFAS.•In pregnant women, increased dietary intake of ALA…”
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Preliminary reliability at 50 V of state-of-the-art RF power GaN-on-Si HEMTs
Published in 68th Device Research Conference (01-06-2010)“…In this paper, state-of-the-art 1 mm RF power GaN-on-Si HEMTs using thick in-situ grown SiN cap layer are presented. Output power density POUT exceeding 10…”
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