Search Results - "Mar’yanchuk, P. D."

Structural, optical, and electrical properties of Cu2SnS3 thin films produced by sol gel method by Orletskii, I. G., Solovan, M. N., Pinna, F., Cicero, G., Mar’yanchuk, P. D., Maistruk, E. V., Tresso, E.

“…The structural, optical, and electrical properties of p -type Cu 2 SnS 3 thin films produced by the deposition of a dimethylsulfoxide-based sol gel solution…”
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Electrical and Optical Properties of Cu2Zn(Fe,Mn)SnS4 Films Prepared by Spray Pyrolysis by Orletskii, I. G., Mar’yanchuk, P. D., Solovan, M. N., Maistruk, E. V., Kozyarskii, D. P.

“…We have analyzed the electrical and optical properties of Cu 2 ZnSnS 4 , Cu 2 FeSnS 4 , and Cu 2 MnSnS 4 films with the p-type electrical conductivity, which…”
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Optical properties of thin Cu2ZnSnS4, films produced by RF magnetron sputtering by Maistruk, E. V., Mar’yanchuk, P. D., Solovan, M. N., Pinna, F., Tresso, E.

“…Optical properties of thin Cu 2 ZnSnS 4 films produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and…”
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Low-temperature spray-pyrolysis of FeS2 films and their electrical and optical properties by Orletskii, I. G., Mar’yanchuk, P. D., Maistruk, E. V., Solovan, M. N., Brus, V. V.

“…Iron disulfide (FeS 2 ) films with a wide range of electrical resistivities 100 Ω cm ⩽ ρ ⩽ 800 kΩ cm, a high adhesion to the substrate, and a resistance to…”
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Optical properties and mechanisms of current flow in Cu2ZnSnS4 films prepared by spray pyrolysis by Orletskii, I. G., Mar’yanchuk, P. D., Solovan, M. N., Brus, V. V., Maistruk, E. V., Kozyarskii, D. P., Abashin, S. L.

“…Thin films Cu 2 ZnSnS 4 (up to 0.9 μm thick) with p -type conductivity and band gap E g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous…”
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Magnetic and band parameters of (3HgS)1–x(Al2S3)x (x = 0.5) crystals doped with manganese by Mar’yanchuk, P. D., Koziarskyi, I. P.

“…Investigations of magnetic susceptibility (χ) of (3HgS) 1– x (Al 2 S 3 ) x ( x = 0.5) crystals doped with manganese investigated by the Faraday method in the…”
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Electrical properties of an n-TiO2/n-GaP semiconductor heterostructure by Brus, V. V., Kovalyuk, Z. D., Mar’yanchuk, P. D.

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Graphite traces on water surface – A step toward low-cost pencil-on-semiconductor electronics and optoelectronics by Brus, V.V., Maryanchuk, P.D.

“…We proposed a simple, low-cost and environmentally friendly method for the reproducible fabrication of high quality next-generation pencil-on-semiconductor…”
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Kinetic properties and band parameters of Hg1–xMnxS crystals by Mar’yanchuk, P. D., Andrushchak, G. O.

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Photosensitive Schottky-type heterojunctions prepared by the drawing of graphite films by Brus, V. V., Maryanchuk, P. D.

“…Graphite/n-CdTe Schottky-type heterojunctions were prepared by means of a very simple and low-cost method: the drawing of graphite films on the rough surface…”
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Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors by Brus, V. V., Maslyanchuk, O. L., Solovan, M. M., Maryanchuk, P. D., Fodchuk, I., Gnatyuk, V. A., Vakhnyak, N. D., Melnychuk, S. V., Aoki, T.

“…We developed a new concept of X- and γ-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type…”
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Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon by Parkhomenko, H. P., Solovan, M. N., Maryanchuk, P. D.

“…Silicon nanowires are formed on n -Si substrates by chemical etching. p -NiO/ n -Si heterostructures are fabricated by reactive magnetron sputtering. The…”
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Giant magnetoresistance in Hg1−x−yMnxFeyTe crystals by Mar’yanchuk, P. D., Maistruk, É. V.

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Electrical and photoelectric properties of MoN/p-CdTe and MoN/n-CdTe heterojunctions by Kovaliuk, T. T., Solovan, M. N., Maryanchuk, P. D.

“…Due to the physical properties of MoN and ITO thin films, it was decided to create MoN/p-CdTe and MoN/n-CdTe heterostructures and investigate their electrical…”
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Molybdenum oxide thin films in CdTe-based electronic and optoelectronic devices by Solovan, M. M., Brus, V. V., Mostovyi, A. I., Maryanchuk, P. D., Tresso, E., Gavaleshko, N. M.

“…This paper reports on the both possible applications of molybdenum oxide (MoOx) thin films in combination with hole or electron conducting CdTe. The high…”
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Secondary phases in Cu2ZnSnS4 films obtained by spray pyrolysis at different substrate temperatures and Cu contents by Babichuk, I.S., Golovynskyi, S., Brus, V.V., Babichuk, I.V., Datsenko, O., Li, Ji, Xu, Guiwen, Golovynska, I., Hreshchuk, O.M., Orletskyi, I.G., Qu, Junle, Yukhymchuk, V.O., Maryanchuk, P.D.

“…•Appearance of secondary phases at different substrate temperatures and Cu contents.•Influence of secondary phases on the optical and structural…”
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Capabilities of CdTe-Based Detectors With } Contacts for Detection of X- and \gamma -Radiation by Maslyanchuk, O. L., Solovan, M. M., Brus, V. V., Kulchynsky, V. V., Maryanchuk, P. D., Fodchuk, I. M., Gnatyuk, V. A., Aoki, T., Potiriadis, C., Kaissas, Y.

“…The charge transport mechanism and spectrometric properties of the X-ray and γ-ray detectors, fabricated by the deposition of molybdenum oxide thin films onto…”
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Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions by Parkhomenko, H. P., Solovan, M. N., Mostovyi, A. I., Ulyanytsky, K. S., Maryanchuk, P. D.

“…The I–V characteristics of NiO/CdTe heterostructures fabricated by reactive magnetron sputtering are measured at different temperatures. It is established that…”
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Optical and electrical properties of thin NiO films deposited by reactive magnetron sputtering and spray pyrolysis by Parkhomenko, H. P., Solovan, M. N., Mostovoi, A. I., Orletskii, I. G., Parfenyuk, O. A., Maryanchuk, P. D.

“…Thin NiO films are deposited by reactive magnetron sputtering and spray pyrolysis. The main optical constants, i.e., refractive index n (λ), absorption…”
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Temperature and light dependent diode current in high-efficiency solution-processed small-molecule solar cells by Brus, V.V., Kyaw, A.K.K., Maryanchuk, P.D., Zhang, J.

“…[Display omitted] •The positive temperature coefficient of the rectification ratio was shown.•The dominating diode current mechanisms were determined in the…”
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