Search Results - "Mansoor, Mehya"

Can stress-induced changes in phonon frequencies of ZrSiO4 make it a potential IR spectroscopy-based pressure sensor? by Mansoor, Mubashir, Mansoor, Mehya, Mansoor, Maryam, Er, Zuhal, Czelej, Kamil, Urgen, Mustafa

“…Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic…”
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Stress-induced changes in phonon frequencies of ZrSiO4: Infrared spectroscopy-based pressure sensor by Mansoor, Mubashir, Mansoor, Mehya, Mansoor, Maryam, Er, Zuhal, Czelej, Kamil, Ürgen, Mustafa

“…Functional materials that can serve as high-pressure transducers are limited, making such sensor material sought after. It has been reported that hydrostatic…”
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Ab-initio calculation of point defect equilibria during heat treatment: Nitrogen, hydrogen, and silicon doped diamond by Mansoor, Mubashir, Mansoor, Mehya, Mansoor, Maryam, Aksoy, Ammar, Seyhan, Sinem Nergiz, Yildirim, Betul, Tahiri, Ahmet, Solak, Nuri, Kazmanli, Kursat, Er, Zuhal, Czelej, Kamil, Urgen, Mustafa

“…Point defects are responsible for a wide range of optoelectronic properties in materials, making it crucial to engineer their concentrations for novel…”
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Atomistic Origins of Various Luminescent Centers and n‑Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach by Czelej, Kamil, Mansoor, Mubashir, Sarsil, Mehmet Ali, Tas, Mert, Sorkhe, Yahya A., Mansoor, Mehya, Mansoor, Maryam, Derin, Bora, Ergen, Onur, Timur, Servet, Ürgen, Mustafa

“…GaN is a technologically indispensable material for various optoelectronic properties, mainly due to the dopant-induced or native atomic-scale point defects…”
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Ab-initio calculation of point defect equilibria during heat treatment: Nitrogen, hydrogen, and silicon doped diamond by Mansoor, Mubashir, Mansoor, Mehya, Mansoor, Maryam, Aksoy, Ammar, Seyhan, Sinem Nergiz, Yıldırım, Betül, Tahiri, Ahmet, Solak, Nuri, Kazmanlı, Kürşat, Er, Zuhal, Czelej, Kamil, Ürgen, Mustafa

“…Point defects in diamond are responsible for a wide range of optoelectronic properties, making it crucial to engineer defect concentrations for novel…”
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