Search Results - "Mank, H."

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  1. 1

    Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy by Monroy, E., Sarigiannidou, E., Fossard, F., Gogneau, N., Bellet-Amalric, E., Rouvière, J.-L., Monnoye, S., Mank, H., Daudin, B.

    Published in Applied physics letters (03-05-2004)
    “…We have studied the surface kinetics of N-face GaN during molecular-beam epitaxial growth by investigating the Ga wetting and the surface morphology. In the…”
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    Journal Article
  2. 2

    Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process by Claudel, A., Blanquet, E., Chaussende, D., Boichot, R., Doisneau, B., Berthomé, G., Crisci, A., Mank, H., Moisson, C., Pique, D., Pons, M.

    Published in Journal of crystal growth (15-11-2011)
    “…Thick AlN layers were grown by high temperature chemical vapor deposition (HTCVD) on 8° off-axis (0 0 0 1) 4H-SiC, on-axis (0 0 0 1) 6H-SiC and on-axis (0 0 0…”
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    Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method by Chassagne, T., Ferro, G., Haas, H., Mank, H., Leycuras, A., Monteil, Y., Soares, F., Balloud, C., Arcade, Ph, Blanc, C., Peyre, H., Juillaguet, S., Camassel, J.

    “…Due to the large difference in lattice parameters and thermal expansion coefficients, the hetero‐epi‐ taxial growth of 3C–SiC on Si mainly results in highly…”
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    Journal Article
  5. 5

    Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) by Roccaforte, F., Greco, G., Fiorenza, P., Di Franco, S., Giannazzo, F., La Via, F., Zielinski, M., Mank, H., Jokubavicius, V., Yakimova, R.

    Published in Applied surface science (30-12-2022)
    “…[Display omitted] •This work demonstrates the feasibility of fabricating vertical Schottky diodes on 3C-SiC material obtained by an innovative method combining…”
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    Journal Article
  6. 6

    GaN/AlGaN superlattices for optoelectronics in the mid-infrared by Guillot, F., Monroy, E., Gayral, B., Bellet-Amalric, E., Jalabert, D., Gérard, J.-M., Dang, Le Si, Tchernycheva, M., Julien, F. H., Monnoye, S., Mank, H.

    Published in Physica Status Solidi (b) (01-06-2006)
    “…In this work we discuss the optical properties of a GaN/Al0.11Ga0.89N multiple‐quantum‐well structure grown on 4H‐SiC by plasma‐assisted molecular‐beam…”
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    Journal Article Conference Proceeding
  7. 7

    Impact of fine surface chemical-mechanical polishing on the manufacturing yield of 1200V SiC Schottky barrier diodes by Tournier, D., Perez-Tomas, A., Godignon, P., Millan, J., Mank, H., Turover, D., Hinchley, D., Rhodes, J.

    “…Unlike other techniques for surface cleaning/etching such as dry etching (RIE, ICP), the new polishing process does not degrade Schottky diode forward…”
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    Conference Proceeding
  8. 8

    Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy by Gogneau, N., Sarigiannidou, E., Monroy, E., Monnoye, S., Mank, H., Daudin, B.

    Published in Applied physics letters (23-08-2004)
    “…The growth mode of N-face GaN deposited on AlN(0001¯) by plasma-assisted molecular beam epitaxy has been investigated. Based on reflection high-energy electron…”
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    Journal Article
  9. 9

    Drugs for treating giardiasis by Zaat, J O, Mank, T h, Assendelft, W J

    “…There can be a high rate of recurrence of disease after initial drug treatment for giardiasis. These drugs also have a range of adverse effects. The objective…”
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    WITHDRAWN: Drugs for treating giardiasis by Zaat, J O M, Mank, T H G, Assendelft, W J J

    Published in Cochrane database of systematic reviews (18-07-2007)
    “…There can be a high rate of recurrence of disease after initial drug treatment for giardiasis. These drugs also have a range of adverse effects. The objective…”
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    Journal Article
  13. 13

    Frequency of myelodysplasia in the GDR (author's transl) by Otto-Unger, G, Mank, H, Wünsche, W

    Published in Zentralblatt für Chirurgie (1982)
    “…All living children suffering from myelomeningoceles and being 1 to 12 years old were registered by means of a questionnaire. The death certificates of all…”
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  14. 14

    Behavior of serum acid levels in children in comparison with adults and the incidence of purine metabolism disorders and concomitant diseases in children of families with gout by Schröder, H E, Mank, H, Mende, T, Heinrich, J J

    “…The result of our examinations was that there is a vast correspondence of the medium levels of serum uric acid as well as of the frequency of hyperuricaemia…”
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