Search Results - "Mandrekar, T."

Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices by Mochizuki, S., Colombeau, B., Zhang, J., Kung, S. C., Stolfi, M., Zhou, H., Breton, M., Watanabe, K., Li, J., Jagannathan, H., Cogorno, M., Mandrekar, T., Chen, P., Loubet, N., Natarajan, S., Haran, B.

“…In this paper, horizontal gate-all-around (hGAA) devices with a SiGe cladded nanosheet (NS) channel have been explored for their potential benefits of Vt…”
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Conformal doping of 3-D structures using sub-atmospheric CVD films by Mandrekar, T, Hernandez, M, Hua, J, Ton, V, Bhatnagar, A, Mehta, S, Venkataraman, S

“…Applicability of SACVD for doping of 3-D structures was assessed on both flat substrates as well as patterned structures focusing on the optimization of dopant…”
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Barrier studies on porous silk semiconductor dielectric by Tőkei, Zs, Iacopi, F., Richard, O., Waeterloos, J., Rozeveld, S., Beach, E., Mebarki, B., Mandrekar, T., Guggilla, S., Maex, K.

“…Barrier integrity of Ta-films deposited using the enhanced coverage by re-sputtering (EnCoRe 1 1 EnCoRe is a trademark of Applied Materials. ) barrier was…”
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Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta by Tőkei, Zs, Kelleher, D., Mebarki, B., Mandrekar, T., Guggilla, S., Maex, K.

“…Passivated single damascene copper SiO 2 damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown…”
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Nickel vs. cobalt silicide integration for sub-50nm CMOS by Froment, B., Muller, M., Brut, H., Pantel, R., Carron, V., Achard, H., Halimaoui, A., Boeuf, F., Wacquant, F., Regnier, C., Ceccarelli, D., Palla, R., Beverina, A., DeJonghe, V., Spinelli, P., Leborgne, O., Bard, K., Lis, S., Tirard, V., Morin, P., Trentesaux, F., Gravey, V., Mandrekar, T., Rabilloud, D., Van, S., Olson, E., Diedrick, J.

“…In this work, NiSi SALICIDE has been fully integrated with sub-50 nm gate length transistors and compared to its CoSi/sub 2/ counterpart. Nickel thickness has…”
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Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances by NOORI, Atif M, BALSEANU, Mihaela, LAUWERS, Anne, LEE, Wen-Chin, JIANXIN LEI, MANDREKAR, Tushar, SCHREUTELKAMP, Robert, SHAH, Kavita, THOMPSON, Scott E, VERHEYEN, Peter, WANG, Ching-Ya, XIA, Li-Qun, BOELEN, Pieter, ARGHAVANI, Reza, COCKBUM, Andrew, DEMUYNCK, Steven, FELCH, Susan, GANDIKOTA, Srinivas, JERRY GELATOS, A, KHANDELWAL, Amit, KITTL, Jorge A

“…Manufacturable processes to reduce both channel and external resistances (R@@dExt@) in CMOS devices are described. Simulations show that R@@dExt@ will become…”
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Ni based silicides for 45 nm CMOS and beyond by Lauwers, Anne, Kittl, Jorge A., Van Dal, Mark J.H., Chamirian, Oxana, Pawlak, Malgorzata A., de Potter, Muriel, Lindsay, Richard, Raymakers, Toon, Pages, Xavier, Mebarki, Bencherki, Mandrekar, Tushar, Maex, Karen

“…Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the…”
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Barrier crystallographic texture control and its impact on copper interconnect reliability by Jay Chen, Parikh, S., Vo, T., Rengarajan, S., Mandrekar, T., Peijun Ding, Ling Chen, Mosely, R.

“…The impacts of barrier micro-structure on Cu seed and electro copper plating (ECP) film have been investigated in terms of seed sheet resistance (R/sub s/)…”
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Manufacturable Processes for \leq 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances by Noori, A.M., Balseanu, M., Boelen, P., Cockburn, A., Demuynck, S., Felch, S., Gandikota, S., Gelatos, A.J., Khandelwal, A., Kittl, J.A., Lauwers, A., Wen-Chin Lee, Jianxin Lei, Mandrekar, T., Schreutelkamp, R., Shah, K., Thompson, S.E., Verheyen, P., Ching-Ya Wang, Li-Qun Xia, Arghavani, R.

“…Manufacturable processes to reduce both channel and external resistances (R Ext ) in CMOS devices are described. Simulations show that R Ext will become…”
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Langevin-like giant magnetoresistance in Co-Cu superlattices by Barlett, D, Tsui, F, Glick, D, Lauhon, L, Mandrekar, T, Uher, C, Clarke, R

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Cu Resistivity Scaling Limits for 20nm Copper Damascene Lines by Van Olmen, J., List, S., Tokei, Z., Carbonell, L., Brongersma, S.H., Volders, H., Kunnen, E., Heylen, N., Ciofi, I., Khandelwal, A., Gelatos, J., Mandrekar, T., Boelen, P.

“…Two of the most important questions concerning the future of interconnects are 1) how scalable is the damascene process to extremely narrow trenches and 2)…”
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Impact of Cu contacts on front-end performance: a projection towards 22nm node by Demuynck, S., Nackaerts, A., Van den bosch, G., Chiarella, T., Ramos, J., Tokei, Zs, Vaes, J., Heylen, N., Beyer, G.P., Van Hove, M., Mandrekar, T., Schreutelkamp, R.

“…In this paper, we investigate the impact of replacing tungsten (W) by a Cu-based contact module. Our experiments show that a 50% reduction in contact…”
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Langevin-like giant magnetoresistance in Co-Cu superlattices by Barlett, D, Tsui, F, Glick, D, Lauhon, L, Mandrekar, T, Uher, C, Clarke, R

“…Evidence for a new type of gaint magnetoresistance in (111) cobalt-copper superlattices with atomically smooth interfaces is presented. It is proposed that the…”
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Intra-alveolar extraction of linguoverted mandibular premolars - the Shetye technique: a technical note by Shetye, Omkar Anand, Mandrekar, Pooja Narendra, Khandeparker, Rakshit Vijay, Fernandes, Trishala Bhadauria, Dhupar, Vikas, Akkara, Francis

“…Extraction of premolars for orthodontic purposes may prove challenging when the tooth is blocked or lingualised. The standard buccal approach may prove…”
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A diagnostic dilemma in pediatric osteomyelitis: a case report by Mandrekar, Pooja Narendra, Gavhane, Sanket, Fernandes, Trishala Bhadauria, Dhupar, Vikas, Dhupar, Anita

“…Infantile osteomyelitis is a rare disease that is infective in nature and may rapidly turn fatal, as the disease is often misdiagnosed due to its varied…”
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