Realization of spin-torque transfer magnetoresistive RAM

Spin-torque transfer (STT) programming is a promising, maturing, non-volatile memory technology for future memory applications. When a sufficient current density passes through the MTJ, the spin polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This i...

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Bibliographic Details
Published in:	IEEE-International Conference On Advances In Engineering, Science And Management (ICAESM -2012) pp. 513 - 517
Main Authors:	Mandhdapu, R., Samson Immanuel, J.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-03-2012
Subjects:	Logic gates Magnetic tunneling Magnetic tunneling junction (MTJ) magnetoresistive random access memory (MRAM) spin torque transfer (STT) magnetoresistive memory
Online Access:	Get full text
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Summary:	Spin-torque transfer (STT) programming is a promising, maturing, non-volatile memory technology for future memory applications. When a sufficient current density passes through the MTJ, the spin polarized current will exert a spin transfer torque to switch the magnetization of the free layer. This is the fundamental of the write mechanism in STT-RAM, current induced magnetization switching. It allows STT-RAM to have a smaller cell size and write current than MRAM.The new MRAM cell structure design can realize high speed and reliable sensing operations in the presence of relatively poor magnetoresistive ratio, while maintain the low sensing current through the magnetic tunnelling junctions (MTJs). The effectiveness of the proposed RAM structure was demonstrated by circuit simulation at 0.18μm CMOS technology using Mentor Graphics tool.
ISBN:	9781467302135 1467302139