Investigation on the Trap Signature in Organic Semiconductor Turmeric Film Through Current–Voltage Analysis

Investigation on the Trap Signature in Organic Semiconductor Turmeric Film Through Current–Voltage Analysis

The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study. An analytical explanation of the built-in potential V x – V graph that emphasizes the presence of trapping states has been provided. Differe...

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Bibliographic Details
Published in:Transactions of Tianjin University Vol. 26; no. 4; pp. 265 - 272
Main Authors: Chakraborty, Kushal, Das, Aloke Kumar, Mandal, Ratan, Mandal, Dulal Krishna
Format: Journal Article
Language:English
Published: Tianjin Tianjin University 01-08-2020
Springer Nature B.V
Department of Physics, Jadavpur University, Kolkata 700032, India%School of Energy Studies, Jadavpur University, Kolkata 700032, India%Department of Mechanical Engineering, Jadavpur University, Kolkata 700032, India
Subjects:
Current voltage characteristics
Electric potential
Engineering
Humanities and Social Sciences
Mechanical Engineering
multidisciplinary
Research Article
Science
Voltage
Turmeric
Trap energy
Schottky effect
Organic semiconductor
Trap factor
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Summary:The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study. An analytical explanation of the built-in potential V x – V graph that emphasizes the presence of trapping states has been provided. Differential analysis of current–voltage ( I – V ) characteristics has also been conducted to verify the trap signature of the carrier in the device. The non-monotonous decrement of the G ( V )– V plot verifies the trap signature. The values of trap energy ( E t ) and trap factor ( θ ) have been derived from the logarithmic I – V relationship. From the analysis of the semilogarithmic I – V plot, the barrier height ( ϕ bi ) of the device has also been determined. The overall I – V curve has been taken into account to examine the Richardson–Schottky and Poole–Frenkel effects on the trap-assisted charge conduction process. From the results of the experiment, the Schottky effect has been observed to be effective, which leads to a bulk-limited charge conduction process.
ISSN:1006-4982
1995-8196
DOI:10.1007/s12209-020-00259-3