Search Results - "Mancini, Stephen A"

Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All 'Room Temperature' Ion Implantations by Mancini, Stephen A., Jang, Seung Yup, Chen, Zeyu, Kim, Dongyoung, Bialy, Alex, Raghotamacher, Balaji, Dudley, Michael, Mahadik, Nadeemullah, Stahlbush, Robert, Al-Jassim, Mowafak, Sung, Woongje

“…Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions…”
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600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET) by Jang, Seung Yup, Mancini, Stephen A., Sung, Woongje

“…This paper presents the successful demonstration of a 600 V 4H-SiC lateral bi-directional JBS diode integrated MOSFET (L-BiD-JBSFET). The unit cell of the…”
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Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs by Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

“…This paper reports static, dynamic, and short-circuit characteristics of split-gate (SG) 1.2 kV 4H-SiC MOSFETs. Conventional (C) MOSFETs and SG-MOSFETs were…”
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Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances by Mancini, Stephen A, Jang, Seung Yup, Kim, Dongyoung, Sung, Woongje

“…Several designs of 1.2kV-rated 4H-SiC JBS diode integrated MOSFETs (JBSFETs) have been successfully fabricated in order to increase the 3 rd quadrant device…”
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Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics by Mancini, Stephen A., Jang, Seung Yup, Binder, Andrew, Floyd, Richard, Kaplar, Robert, Atcitty, Stan, Morgan, Adam J., Sung, Woongje

“…This paper presents the first successfully demonstrated monolithically integrated > 3\text{kV} 4H-SiC Bi-Directional FETs (BiDFETs) fabricated utilizing both…”
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Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures by Mancini, Stephen A., Yup Jang, Seung, Chen, Zeyu, Kim, Dongyoung, Lynch, Justin, Liu, Yafei, Raghothamachar, Balaji, Kang, Minseok, Agarwal, Anant, Mahadik, Nadeemullah, Stahlbush, Robert, Dudley, Michael, Sung, Woongje

“…Several designs of 1.2kV-rated 4H-SiC PiN diodes and Junction Barrier Schottky (JBS) diodes have been successfully fabricated with various P+ implantation…”
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Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs) by Mancini, Stephen A., Yup Jang, Seung, Kim, Dongyoung, Sung, Woongje

“…Several different designs of 1.2kV-rated 4H-SiC JBS diode integrated MOSFETs (JBSFETs) have been successfully fabricated to increase the 3 rd quadrant device…”
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