Search Results - "Manchon, Benoît"

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors by Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Bugnet, Matthieu, Barhoumi, Rabei, Nirantar, Shruti, Mayes, Edwin, Rojo Romeo, Pedro, Blanchard, Nicholas, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary…”
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Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Manchon, Benoît, Segantini, Greta, Baboux, Nicolas, Rojo Romeo, Pedro, Barhoumi, Rabei, Infante, Ingrid C., Alibart, Fabien, Drouin, Dominique, Vilquin, Bertrand, Deleruyelle, Damien

“…Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by…”
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Ferroelectricity Improvement in Ultra‐Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

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Ferroelectricity Improvement in Ultra‐Thin Hf 0.5 Zr 0.5 O 2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

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Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Manchon, Benoît, Segantini, Greta, Baboux, Nicolas, Rojo Romeo, Pedro, Barhoumi, Rabei, Drouin, Dominique, Ingrid C., Infante, Alibart, F., Vilquin, Bertrand, Deleruyelle, Damien

“…Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by…”
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Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Ultra‐Thin Hf0.5Zr0.5O2 Capacitors Through interface engineering, Greta Segantini and co‐workers improve ferroelectricity and scalability of hafnium zirconium…”
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Ferroelectricity Improvement in Ultra‐Thin Hf0.5Zr0.5O2 Capacitors by the Insertion of a Ti Interfacial Layer by Segantini, Greta, Barhoumi, Rabei, Manchon, Benoît, Cañero Infante, Ingrid, Rojo Romeo, Pedro, Bugnet, Matthieu, Baboux, Nicolas, Nirantar, Shruti, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…The effect at the nanoscale of a Ti interfacial layer on the performances of TiN/HfZrO2/TiN capacitors is reported. Ferroelectric hafnium zirconium oxide (HZO)…”
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Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf 0.5 Zr 0.5 O 2 ‐Based Ferroelectric Capacitors by Segantini, Greta, Manchon, Benoît, Cañero Infante, Ingrid, Bugnet, Matthieu, Barhoumi, Rabei, Nirantar, Shruti, Mayes, Edwin, Rojo Romeo, Pedro, Blanchard, Nicholas, Deleruyelle, Damien, Sriram, Sharath, Vilquin, Bertrand

“…Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary…”
Get full text