Search Results - "Man Song, Keun"

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  1. 1

    Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN by Song, Keun-Man, Kim, Jong-Min, Kang, Bong-Kyun, Yoon, Dae-Ho, Kang, S., Lee, Sang-Won, Lee, Sung-Nam

    Published in Applied physics letters (21-05-2012)
    “…We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic…”
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    Journal Article
  2. 2

    Anisotropic strain relaxation and abnormal zigzag shape planar defects in nonpolar a-GaN grown by metalorganic chemical vapor deposition by Hyun Kong, Bo, Koun Cho, Hyung, Man Song, Keun, Ho Yoon, Dea

    Published in Journal of crystal growth (15-12-2010)
    “…The correlation between bi-axial in-plane stress relaxation and formation mechanism of the abnormal zigzag shape prismatic stacking faults (PSFs) observed in…”
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    Journal Article
  3. 3

    Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes by Lee, Moonsang, Lee, Hyun Uk, Song, Keun Man, Kim, Jaekyun

    Published in Scientific reports (30-01-2019)
    “…The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate…”
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    Journal Article
  4. 4

    Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells by Hoon Kim, Ji, Hwang, Sung-Min, Son, Ji-Su, Hyeon Baik, Kwang, Man Song, Keun, Ho Park, Jung

    Published in Journal of crystal growth (15-09-2012)
    “…The structural and optical properties of nonpolar a-plane (11−20) GaN and In0.18GaN0.82/GaN multiple quantum wells (MQWs) grown on TiO2 nanoparticle…”
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    Journal Article
  5. 5

    Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy by Song, Keun-Man, Kim, Jong-Min, Lee, Dong-Hun, Kang, Dae-Hun, Park, Won-Kyu, Shin, Chan-Soo, Ko, Chul-Gi, Hwang, Sung-Min, Yoon, Dae-Ho

    Published in Journal of crystal growth (15-01-2011)
    “…Non-polar a-plane GaN layers were grown directly on r-plane sapphire substrates without a buffer layer. This study examined the effect of initial growth…”
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    Journal Article Conference Proceeding
  6. 6

    Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels by Man Song, Keun, Min Kim, Jong, Soo Shin, Chan, Gi Ko, Chul, Koun Cho, Hyung, Ho Yoon, Dae, Min Hwang, Sung, Kim, Hogyoung

    Published in Journal of crystal growth (01-05-2013)
    “…The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was…”
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    Journal Article Conference Proceeding
  7. 7

    Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy by Kim, Jongmin, Man Song, Keun, Ju Bae, Seong, Soo Shin, Chan, Gi Ko, Chul, Hyun Kong, Bo, Koun Cho, Hyung

    Published in Journal of crystal growth (01-06-2011)
    “…a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at…”
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    Journal Article
  8. 8

    Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition by Song, Keun-Man, Kang, Pil-Geun, Shin, Heung-Soo, Kim, Jong-Min, Park, Won-Kyu, Ko, Chul-Gi, Shim, Hyun-Wook, Ho Yoon, Dae

    Published in Journal of crystal growth (01-10-2010)
    “…This study examined the influence of strain-compensated triple AlGaN/GaN/InGaN superlattice structures (SLs) in n-GaN on the structural, electrical and optical…”
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    Journal Article
  9. 9

    InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate by Lee, Moonsang, Yang, Mino, Song, Keun Man, Park, Sungsoo

    Published in ACS photonics (18-04-2018)
    “…We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN grown using a Si substrate. Transmission electron microscopy and X-ray…”
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    Journal Article
  10. 10

    Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes by Kim, Chang Zoo, Choi, Je Hyuk, Song, Keun-Man, Shin, Chan Soo, Ko, Chul Gi, Kim, Hogyoung

    Published in Journal of the Korean Physical Society (01-05-2013)
    “…We investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP multiple quantum wells (MQWs) grown at different growth temperatures…”
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    Journal Article
  11. 11

    Schottky contacts to polar and nonpolar n-type GaN by Kim, Hogyoung, Phark, Soo-Hyon, Song, Keun-Man, Kim, Dong-Wook

    “…Using the current-voltage measurements, we observed the barrier heights of c -plane GaN in Pt and Au Schottky contacts to be higher than those of a -plane GaN…”
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    Journal Article
  12. 12

    Characterization of AlInP cladding layers with Mg and Si diffusion barriers for high-power red GaInP-AlGaInP laser diodes by Kim, Chang Zoo, Choi, Je Hyuk, Bae, Seong-Ju, Song, Keun-Man, Shin, Chan Soo, Ko, Chul Gi, Kim, Hogyoung

    Published in Journal of the Korean Physical Society (01-10-2012)
    “…We investigated the doping profiles of Mg and Si dopants near the multiple quantum well (MQW) active region in 640-nm-band GaInP-AlGaInP red laser diodes…”
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    Journal Article
  13. 13

    Graphene-GaN Schottky diodes by Kim, Seongjun, Seo, Tae Hoon, Kim, Myung Jong, Song, Keun Man, Suh, Eun-Kyung, Kim, Hyunsoo

    Published in Nano research (01-04-2015)
    “…The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a…”
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    Journal Article
  14. 14

    Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes by Park, Geun Chul, Hwang, Soo Min, Lee, Seung Muk, Choi, Jun Hyuk, Song, Keun Man, Kim, Hyun You, Kim, Hyun-Suk, Eum, Sung-Jin, Jung, Seung-Boo, Lim, Jun Hyung, Joo, Jinho

    Published in Scientific reports (19-05-2015)
    “…The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic…”
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    Journal Article
  15. 15

    S-parameter and perfect pinning of the Fermi level at nonpolar (11-20) a -plane p -GaN surfaces by Choi, Yunju, Man Song, Keun, Kim, Hyunsoo

    Published in Applied physics letters (24-09-2012)
    “…We investigated the Schottky barrier height and S-parameter at nonpolar (11-20) a-plane p-GaN surfaces by using Schottky diodes fabricated with various metals,…”
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    Journal Article
  16. 16

    Control of copper nanowire network properties and application to transparent conducting layer in LED by Yoon, Hahnjoo, Shin, Dong Su, Babu, Bathula, Kim, Taek Gon, Song, Keun Man, Park, Jinsub

    Published in Materials & design (15-10-2017)
    “…We report the control of structural, optical, and electrical properties of solution processed copper (Cu) nanowires (NWs) by varying the capping agent…”
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    Journal Article
  17. 17

    Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate by Lee, Moonsang, Lee, Hyunkyu, Song, Keun Man, Kim, Jaekyun

    Published in Nanomaterials (Basel, Switzerland) (18-07-2018)
    “…We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using…”
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    Journal Article
  18. 18

    Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED by Kim, Dohyun, Song, Keun, Jung, UiJin, Kim, Subin, Shin, Dong, Park, Jinsub

    Published in Applied sciences (01-02-2020)
    “…In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with…”
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    Journal Article
  19. 19

    Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities by Oh, Dong-Sub, Jang, Jong-Jin, Nam, Okhyun, Song, Keun-Man, Lee, Sung-Nam

    Published in Journal of crystal growth (01-07-2011)
    “…We investigated the anisotropic optical and structural properties of semipolar (11–22) InGaN-based green light emitting diodes (LEDs) grown on GaN templates…”
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    Journal Article Conference Proceeding
  20. 20

    A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN by Song, Keun Man, Kim, Hogyoung

    Published in Japanese Journal of Applied Physics (01-05-2012)
    “…Si-doped polar ($c$-plane) and nonpolar ($a$-plane) GaN layers grown by metal--organic vapor phase epitaxy (MOVPE) were comparatively investigated using…”
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    Journal Article