Search Results - "Man Song, Keun"
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Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
Published in Applied physics letters (21-05-2012)“…We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic…”
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Anisotropic strain relaxation and abnormal zigzag shape planar defects in nonpolar a-GaN grown by metalorganic chemical vapor deposition
Published in Journal of crystal growth (15-12-2010)“…The correlation between bi-axial in-plane stress relaxation and formation mechanism of the abnormal zigzag shape prismatic stacking faults (PSFs) observed in…”
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3
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
Published in Scientific reports (30-01-2019)“…The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate…”
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4
Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
Published in Journal of crystal growth (15-09-2012)“…The structural and optical properties of nonpolar a-plane (11−20) GaN and In0.18GaN0.82/GaN multiple quantum wells (MQWs) grown on TiO2 nanoparticle…”
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5
Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy
Published in Journal of crystal growth (15-01-2011)“…Non-polar a-plane GaN layers were grown directly on r-plane sapphire substrates without a buffer layer. This study examined the effect of initial growth…”
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Journal Article Conference Proceeding -
6
Influence of initial growth pressure on the optical properties of Si-doped nonpolar a-plane GaN grown with different doping levels
Published in Journal of crystal growth (01-05-2013)“…The effect of crystalline quality of undoped a-plane GaN buffer layers on the properties of Si-doped GaN layers grown with different doping levels was…”
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7
Electrical properties of GaN grown on a-plane GaN template by plasma-assisted molecular beam epitaxy
Published in Journal of crystal growth (01-06-2011)“…a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at…”
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Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition
Published in Journal of crystal growth (01-10-2010)“…This study examined the influence of strain-compensated triple AlGaN/GaN/InGaN superlattice structures (SLs) in n-GaN on the structural, electrical and optical…”
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9
InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate
Published in ACS photonics (18-04-2018)“…We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN grown using a Si substrate. Transmission electron microscopy and X-ray…”
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10
Optical investigation of GaInP-AlGaInP quantum-well layers for high-power red laser diodes
Published in Journal of the Korean Physical Society (01-05-2013)“…We investigated the effect of Si diffusion on the optical properties of GaInP-AlGaInP multiple quantum wells (MQWs) grown at different growth temperatures…”
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11
Schottky contacts to polar and nonpolar n-type GaN
Published in Journal of the Korean Physical Society (2012)“…Using the current-voltage measurements, we observed the barrier heights of c -plane GaN in Pt and Au Schottky contacts to be higher than those of a -plane GaN…”
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12
Characterization of AlInP cladding layers with Mg and Si diffusion barriers for high-power red GaInP-AlGaInP laser diodes
Published in Journal of the Korean Physical Society (01-10-2012)“…We investigated the doping profiles of Mg and Si dopants near the multiple quantum well (MQW) active region in 640-nm-band GaInP-AlGaInP red laser diodes…”
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13
Graphene-GaN Schottky diodes
Published in Nano research (01-04-2015)“…The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a…”
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14
Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes
Published in Scientific reports (19-05-2015)“…The incorporation of doping elements in ZnO nanostructures plays an important role in adjusting the optical and electrical properties in optoelectronic…”
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15
S-parameter and perfect pinning of the Fermi level at nonpolar (11-20) a -plane p -GaN surfaces
Published in Applied physics letters (24-09-2012)“…We investigated the Schottky barrier height and S-parameter at nonpolar (11-20) a-plane p-GaN surfaces by using Schottky diodes fabricated with various metals,…”
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16
Control of copper nanowire network properties and application to transparent conducting layer in LED
Published in Materials & design (15-10-2017)“…We report the control of structural, optical, and electrical properties of solution processed copper (Cu) nanowires (NWs) by varying the capping agent…”
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Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
Published in Nanomaterials (Basel, Switzerland) (18-07-2018)“…We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using…”
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Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED
Published in Applied sciences (01-02-2020)“…In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with…”
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Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities
Published in Journal of crystal growth (01-07-2011)“…We investigated the anisotropic optical and structural properties of semipolar (11–22) InGaN-based green light emitting diodes (LEDs) grown on GaN templates…”
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Journal Article Conference Proceeding -
20
A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN
Published in Japanese Journal of Applied Physics (01-05-2012)“…Si-doped polar ($c$-plane) and nonpolar ($a$-plane) GaN layers grown by metal--organic vapor phase epitaxy (MOVPE) were comparatively investigated using…”
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