Search Results - "Mamedov, T. N"
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Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001)
Published in npj quantum materials (14-01-2022)“…We study the surface crystalline and electronic structures of the antiferromagnetic topological insulator MnBi 2 Te 4 using scanning tunneling…”
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2
The Charge Transport Mechanism in a New Magnetic Topological Insulator MnBi0.5Sb1.5Te4
Published in Physics of the solid state (01-07-2021)“…A new layered magnetic topological insulator with the composition MnBi 0.5 Sb 1.5 Te 4 is obtained. The electrical conductivity in the plane of the layers and…”
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3
Photoinduced Reversible Local Deformation of the Surface Relief in Bulk Single Crystals of TlInSe2, TlGaTe2, and TlSe
Published in Technical physics letters (01-07-2018)“…Giant macroscopic expansion of the surface relief, localized within a laser spot size, has been observed in bulk single crystals of TlInSe 2 , TlGaTe 2 , and…”
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4
Prediction and observation of an antiferromagnetic topological insulator
Published in Nature (London) (01-12-2019)“…Magnetic topological insulators are narrow-gap semiconductor materials that combine non-trivial band topology and magnetic order 1 . Unlike their nonmagnetic…”
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5
Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2Te4
Published in Scientific reports (06-08-2020)“…Modification of the gap at the Dirac point (DP) in axion antiferromagnetic topological insulator MnBi 2 Te 4 and its electronic and spin structure have been…”
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Journal Article -
6
Photoluminescence and spectroscopic ellipsometry of single crystal MnGa2S4
Published in Bulletin of materials science (04-06-2024)“…This paper reports the synthesis, photoluminescence (PL) and spectroscopic ellipsometry (SE) studies of MnGa 2 S 4 single crystal. Here, the study of…”
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7
Lattice Dynamics of Bi2Те3 and Vibrational Modes in Raman Scattering of Topological Insulators MnBi2Te4·n(Bi2Te3)
Published in JETP letters (01-06-2022)“…This work is devoted to the experimental study and symmetry analysis of the Raman-active vibration modes in MnBi 2 Te 4 · n (Bi 2 Te 3 ) van der Waals…”
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Journal Article -
8
Transport Properties of the Magnetic Topological Insulators Family (MnBi2Te4)(Bi2Te3)m (m = 0, 1, …, 6)
Published in JETP letters (01-12-2023)“…Systematic studies of magneto-transport properties of the whole (MnBi 2 Te 4 )(Bi 2 Te 3 ) m family of magnetic topological insulators ( have been carried out…”
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9
Temperature Studies of Raman Spectra in MnBi2Te4 and MnSb2Te4 Magnetic Topological Insulators
Published in JETP letters (01-09-2023)“…Raman spectra of magnetic topological crystalline insulators in a wide temperature range including the magnetic ordering region are studied in detail. The…”
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10
Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity-doped gamma-irradiated incommensurate TlInS2
Published in Physica status solidi. A, Applications and materials science (01-09-2006)“…Temperature‐dependent dielectric and conduction properties of the impurity‐doped and gamma‐irradiated samples of TlInS2 semiconductor‐ferroelectric with…”
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Journal Article Conference Proceeding -
11
Ab Initio and Experimental Study of Vibrational Properties of TlFeS2 and TlFeSe2 Crystals
Published in Physics of the solid state (01-11-2021)“…Vibrational properties of TlFeS 2 and TlFeSe 2 crystal lattices have been investigated experimentally using Raman scattering (RS) and infrared reflection (IR)…”
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12
Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator $${\hbox {MnBi}}_2 {\hbox {Te}}_4
Published in Scientific reports (06-08-2020)“…Modification of the gap at the Dirac point (DP) in axion antiferromagnetic topological insulator $${\hbox {MnBi}}_2 {\hbox {Te}}_4$$ MnBi 2 Te 4 and its…”
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Journal Article -
13
Impact of Co Atoms on the Electronic Structure of Bi2Te3 and MnBi2Te4 Topological Insulators
Published in Journal of experimental and theoretical physics (01-05-2022)“…This work is devoted to an experimental investigation of the electronic structure of the surface of topological insulators of various stoichiometry during the…”
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Journal Article -
14
Erratum to: Several Articles in JETP Letters
Published in JETP letters (2022)“…An Erratum to this paper has been published: https://doi.org/10.1134/S0021364022380039…”
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15
Ab initio Calculations of Phonon Dispersion in CdGa2S4
Published in Physics of the solid state (01-11-2018)“…—The phonon spectrum of CdGa 2 S 4 has been experimentally investigated by Raman spectroscopy and theoretically analyzed using the density functional theory…”
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16
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals
Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)“…The temperature dependences of the Raman-active frequencies , in layered Bi 2 Se 3 single crystals are studied. The contribution of the thermal expansion to a…”
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17
Optical Properties of Polyethylene Filled with Bi2Te3 Nanocrystallites
Published in Semiconductors (Woodbury, N.Y.) (01-02-2019)“…Composite mixtures with various component concentrations are fabricated by the thermal pressing of low-density polyethylene and Bi 2 Te 3 in the powder-like…”
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18
Ab initio calculations of phonon dispersion in CdGa2Se4
Published in Semiconductors (Woodbury, N.Y.) (01-05-2017)“…The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in…”
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19
The relationship between the family structure and characteristics of the stress reaction in adolescent addicts
Published in Zhurnal nevrologii i psikhiatrii imeni S.S. Korsakova (2018)“…To study the relationship between the family structure and characteristics of the response to stress in adolescent addicts. The study included 65 patients who…”
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20
In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
Published in Semiconductors (Woodbury, N.Y.) (01-04-2017)“…Unrelaxed InAs1–xSbx (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The…”
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