Search Results - "Malisova, E. V."

Properties of epitaxial layers of p-type germanium-doped gallium arsenide by Malisova, E. V., Nikiforova, M. P., Khludkov, S. S.

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Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide by Brudnyi, V. N., Budnitskii, D. L., Kolin, N. G., Malisova, E. V., Nikiforova, M. P.

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Effect of electron irradiation on the properties of germanium-doped gallium arsenide by Brudnyi, V. N., Budnitskii, D. L., Kolin, N. G., Malisova, E. V., Nikiforova, M. P.

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Selection of the model of an impurity energy spectrum of a semiconductor by the method of optimizing the parameters of the neutrality equation by Krivov, M. A., Malisova, E. V., Popova, E. A.

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On the question of the uniqueness of determining defect parameters in semiconductors on the basis of an analysis of the temperature dependence of the hall charge carrier concentration by using an electronic computer by Krivov, M. A., Popova, E. A., Malisova, E. V.

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Electrophysical properties of heat-treated gallium arsenide by Krivov, M. A., Malisova, E. V., Popova, E. A.

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Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities by Krivov, M. A., Malisova, E. V., Nikiforova, M. P., Starikov, A. N., Khludkov, S. S., Grigor'ev, Yu. A., Egorova, O. L., Osvenskii, V. B.

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Determining the parameters of local centers in a semiconductor from equilibrium charge-carrier concentration using a computer by Krivov, M. A., Popova, E. A., Malisova, E. V.

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The electrophysical properties of InBi by Krivov, M. A., Malisova, E. V., Presnov, V. A.

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Some photoelectric and electrical properties of copper-doped gallium arsenide by Voitsekhovskii, A. V., Zakharova, G. A., Krivov, M. A., Malisova, E. V.

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Properties of n-type gallium arsenide doped with germanium when single crystals are grown from the melt by Krivov, M. A., Malisova, E. V., Mel'chenko, . N., Morozov, V. S., Nikiforova, M. P., Khludkov, S. S., Grigor'ev, Yu. A., Egorova, O. L., Osvenskii, V. B.

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Behavior of copper in gallium arsenide with a high tellurium concentration: I. Electrophysical properties and cathode luminescence spectra by Kamenskaya, I. V., Krivov, M. A., Malisova, E. V., Morozov, V. C., Nikiforova, M. P., Popova, E. A., Khludkov, S. S.

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Investigation of the electrophysical and photoelectric properties of diffused layers of gallium arsenide obtained by compensation of copper by Krivov, M. A., Malisova, E. V., Mel'chenko, . N., Nikiforova, M. P., Popova, E. A., Tarasova, L. K., Khludkov, S. S.

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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors by Antonov, V. V., Voitsekhovskii, A. V., Krivov, M. A., Malisova, E. V., Mel'chenko, . N., Nikiforova, M. P., Popova, E. A., Fuks, G. M., Khludkov, S. S.

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Behavior of copper in gallium arsenide with high tin concentration by Kamenskaya, I. V., Krivov, M. A., Malisova, E. V., Mel'chenko, . N., Morozov, V. S., Nikiforova, M. P., Popova, E. A., Tarasova, L. K., Khludkov, S. S.

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Investigation of gallium arsenide containing coppee as a material for photoresistor receivers by Voisekhovskii, A. V., Zakharova, G. A., Krivov, M. A., Lilenko, Yu. V., Malisova, E. V., Petrov, A. S., Popova, E. A.

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