Search Results - "Malhi, S. D. S."

Bis-pyrimidine Derivatives: Synthesis and Impact of Olefinic/Aromatic Linkers on Antimicrobial and DNA Photocleavage Activity by Kaur, M., Yusuf, M., Malhi, D. S., Sohal, H. S.

“…Pyrimidine ring is an integral constituent of many natural biological systems, and pyrimidine derivatives have numerous synthetic and biological applications;…”
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Synthesis and Antimicrobial Evaluation of Some Novel 2-[4-Substituted 5-(ethoxycarbonyl)-3-methyl-1,4-dihydropyrano[2,3-c]pyrazol-6-yl]acetic Acid Derivatives by Singh, K., Malhi, D. S., Singh, B., Sohal, H. S.

“…Pyranopyrazoles substituted with polar moieties increase the rate of metabolization against various unwanted and new generation microbes. The present article…”
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Low-power BiCMOS circuits for high-speed interchip communication by Elrabaa, M.S., Elmasry, M.I., Malhi, D.S.

“…A universal BiCMOS low-voltage-swing transceiver (driver/receiver) with low on-chip power consumption is reported. Using a 3.3 V supply, the novel transceiver…”
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Gate-controlled lateral PNP BJT: characteristics, modeling and circuit applications by Zhixin Yan, Deen, M.J., Malhi, D.S.

“…This paper describes the electrical characteristics, modeling and some circuit applications of a gate-controlled lateral pnp transistor (GC-LPNP) which has…”
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Lateral zone growth and characterization of device quality silicon-on-insulator wafers by Lam, H. W., Pinizzotto, R. F., Malhi, S. D. S., Vaandrager, B. L.

“…A lateral zone melting process has been developed whereby (100) silicon-on-insulator wafers can be obtained. Small angle grain boundaries exist extensively in…”
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High-speed noise-immune AlGaAs/GaAs HBT logic for static memory application by Hagley, W.A., Day, D., Malhi, D.S., Xu, J.M.

“…The authors evaluate the performance of a new gate topology that gives large logic swings and a high noise margin at low power dissipation. The measured noise…”
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Thermal annealing behavior of an oxide layer under silicon by Hamdi, A. H., McDaniel, F. D., Pinizzotto, R. F., Matteson, S., Lam, H. W., Malhi, S. D. S.

“…High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in…”
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Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon by Malhi, S.D.S., Shichijo, H., Banerjee, S.K., Sundaresan, R., Elahy, M., Pollack, G.P., Richardson, W.F., Shah, A.H., Hite, L.R., Womack, R.H., Chatterjee, P.K., Lam, H.W.

“…Building on nearly two decades of reported results for MOSFET's fabricated in small-grain polycrystalline silicon, a design methodology is developed that…”
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Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source by Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Bonifield, T., Shichijo, H., Banerjee, S., Elahy, M., Shah, A.H., Womack, R., Chatterjee, P.K.

“…Improvements in polysilicon grain-boundary passivation techniques have made polysilicon MOSFET's increasingly attractive, as vertically stackable circuit…”
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A 4-Mbit DRAM with trench-transistor cell by Shah, A.H., Wang, C., Womack, R.H., Gallia, J.D., Shichijo, H., Davis, H.E., Elahy, M., Banerjee, S.K., Pollack, G.P., Richardson, W.F., Bordelon, D.M., Malhi, S.D.S., Pilch, C.J., Tran, B., Chatterjee, P.K.

“…An experimental 5-V-only 1M-word/spl times/4-bit dynamic RAM with page and SCD modes has been built in a relatively conservative 1-/spl mu/m CMOS technology…”
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Stacked CMOS SRAM cell by Chen, C.-E., Lam, H.W., Malhi, S.D.S., Pinizzotto, R.F.

“…A static random access memory (SRAM) cell with cross-coupled stacked CMOS inverters is demonstrated for the first time. In this approach, CMOS inverters are…”
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VLSI Materials: A Comparison between Buried Oxide SOI and SOS by Hamdi, A. H., McDaniel, F. D., Pinizzotto, R. F., Matteson, S., Lam, H. W., Malhi, S. D. S.

“…High dose oxygen ion implantation in Si has been used to form a 0.48 μm thick buried oxide layer. The total dose was 2.1 × 1018 0+/cm2 implanted at 150…”
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p-Channel MOSFET's in LPCVD PolySilicon by Malhi, S.D.S., Chatterjee, P.K., Pinizzotto, R.F., Lam, H.W., Chen, C.E.C., Shichijo, H., Shah, R.R., Bellavance, D.W.

“…p-channel MOSFET's have been fabricated in LPCVD polysilicon. A 5000-Å n + poly acts as the gate electrode on which a 500-Å thermal oxide is grown to act as…”
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Edge-defined self-alignment of submicrometer overlaid devices by Malhi, S.D.S., Chatterjee, P.K., Bonifield, T.D., Leiss, J.E., Carter, D.E., Pinizzotto, R.F., Coleman, D.J.

“…A novel device structure for self-aligning the overlaid device in a stacked CMOS process is introduced and demonstrated. The structure allows submicrometer…”
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Trench transistor DRAM cell by Shichijo, H., Banerjee, S.K., Malhi, S.D.S., Pollack, G.P., Richardson, W.F., Bordelon, D.M., Womack, R.H., Elahy, M., Wang, C.-P., Gallia, J., Davis, H.E., Shah, A.H., Chatterjee, P.K.

“…A new one-transistor DRAM cell with both the transistor and the capacitor fabricated on the trench sidewalls is described. With the signal stored on the…”
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SiGe W-CDMA transmitter for mobile terminal application by Malhi, D.S., Larson, L.E., Dawn Wang, Demirdag, C., Pereira, V.

“…This paper presents the design considerations and experimental results of a transmitter integrated circuit (IC) for wide-band code division multiple access…”
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3.1-4.7GHz WiMedia UWB RF/Analog Front-End in 130nm CMOS by Lynch, M.W., Demirdag, C., Belabbes, N., Carnevali, S., Lacy, C., Yu, M., Burns, A., An, W., Jin, H., Park, J., Malhi, D.S.

“…A highly integrated transceiver for WiMedia UWB applications is presented. Implemented in 130 nm CMOS and operating from 1.2 V and 2.5 V supplies, it features…”
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An atypical complicated left-sided bronchopleural fistula presenting more than seven months after lobectomy by Fishman, Troy J., Salabei, Joshua K., Zadeh, Cameron M., Malhi, Manjot S., Asnake, Zekarias T., Bazikian, Yvette

“…Bronchopleural fistulas (BPF) are abnormal sinus tracts connecting the bronchi and pleural cavity and form after surgical resection of a lung lobe. It is a…”
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Process and performance comparison of an 8K x 8-bit SRAM in three stacked CMOS technologies by Hite, L R, Sundaresan, R, Malhi, S D S, Lam, H W, Hester, R K, Shah, A H, Chatterjee, P K

“…Using self-aligned and non-self-aligned stacked CMOS technologies experimental 8K x 8-bit static random-access memories (SRAM'S) have been fabricated. Hydrogen…”
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Characteristics of MOSFET's Fabricated in SPE Grown Polysilicon by Malhi, S. D. S., Sundaresan, R., Pollack, C. P.

“…Currently various SOI and 3D schemes are being evaluated to enable novel 'MOS processes. Solid Phase Epitaxy (SPE) appears to be a potentially very valuable…”
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