Search Results - "Makhavikou, M. A."

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  1. 1

    Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere by Komarov, F. F., Makhavikou, M. A., Vlasukova, L. A., Milchanin, O. V., Skuratov, V. A., Vuuren, A. Janse, Neetling, J. N., Parkhomenko, I. N., Żuk, J.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…It has been found that “hot” high-fluence Zn + implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in…”
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    Journal Article
  2. 2

    Ion-beam formation and track modification of InAs nanoclusters in silicon and silica by Komarov, F. F., Milchanin, O. V., Skuratov, V. A., Makhavikou, M. A., Janse van Vuuren, A., Neethling, J. N., Wendler, E., Vlasukova, L. A., Parkhomenko, I. N., Yuvchenko, V. N.

    “…The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a…”
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    Journal Article
  3. 3
  4. 4

    Structural and Luminescent Properties of Sn-Doped SiO2 Layers by Komarov, F. F., Vlasukova, L. A., Milchanin, O. V., Makhavikou, M. A., Parkhomenko, I. N., Wendler, E., Wesch, W., Mudryi, A. V., Ismailova, G. A.

    Published in Journal of applied spectroscopy (2014)
    “…The formation of tin nanocrystallites in a SiO 2 :Sn matrix using a high-dose implantation technique followed by high-temperature processing was studied…”
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    Journal Article
  5. 5

    Visible Photoluminescence of Non-Stoichiometric Silicon Nitride Films: The Effect of Annealing Temperature and Atmosphere by Vlasukova, L. A., Komarov, F. F., Parkhomenko, I. N., Milchanin, O. V., Makhavikou, M. A., Mudryi, A. V., Żuk, J., Kopychiński, P., Togambayeva, A. K.

    Published in Journal of applied spectroscopy (01-07-2015)
    “…The radiative properties of non-stoichiometric silicon nitride SiN x fi lms produced by plasma-enhanced chemical vapor deposition were studied. Intense…”
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    Journal Article
  6. 6

    Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers by Romanov, I.A., Krekoten, N.A., Lu, H.-L., Vlasukova, L.A., Parkhomenko, I.N., Komarov, F.F., Milchanin, O.V., Makhavikou, M.A., Mudryi, A.V., Zhivulko, V.D., Kovalchuk, N.S.

    “…Two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical…”
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    Conference Proceeding