Search Results - "Makhavikou, M."

Fluence effect on photo- and electroluminescence of silica layers implanted with Sn+ ions by Romanov, I., Komarov, F., Parkhomenko, I., Vlasukova, L., Makhavikou, M., Milchanin, O., Wendler, E., van Vuuren, A., Neethling, J.

“…•Annealed Sn-implanted SiO2 films exhibit intense blue-violet electroluminescence.•Blue-violet emission intensity decreases with Sn concentration in SiO2…”
Get full text

Structural Transformation of “Silica+Zn” Nanocomposite after Annealing in Oxidizing Atmosphere by Komarov, F. F., Makhavikou, M. A., Vlasukova, L. A., Milchanin, O. V., Skuratov, V. A., Vuuren, A. Janse, Neetling, J. N., Parkhomenko, I. N., Żuk, J.

“…It has been found that “hot” high-fluence Zn + implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in…”
Get full text

Ion-beam formation and track modification of InAs nanoclusters in silicon and silica by Komarov, F. F., Milchanin, O. V., Skuratov, V. A., Makhavikou, M. A., Janse van Vuuren, A., Neethling, J. N., Wendler, E., Vlasukova, L. A., Parkhomenko, I. N., Yuvchenko, V. N.

“…The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a…”
Get full text

Effects of swift heavy ion irradiation on the InAs and Zn-based nanoparticles ion-beam synthesized in silica by Vlasukova, L., Komarov, F., Makhavikou, M., van Vuuren, A., Skuratov, V., Dauletbekova, A., Neethling, J., Wendler, E., Zuk, J., Parkhomenko, I., Milchanin, O.

“…Till now, a shape elongation effect under swift heavy ions (SHI) irradiation was observed predominantly for metal nanoparticles (NPs). We report this effect…”
Get full text

Origin of visible photoluminescence from Si-rich and N-rich silicon nitride films by Parkhomenko, I., Vlasukova, L., Komarov, F., Milchanin, O., Makhavikou, M., Mudryi, A., Zhivulko, V., Żuk, J., Kopyciński, P., Murzalinov, D.

“…Si-rich (SiN1.1) and N-rich (SiN1.5) silicon nitride films were grown on the Si wafers by plasma-enhanced chemical vapor deposition. Their composition and…”
Get full text

Raman monitoring of ZnSe and ZnSxSe1−x nanocrystals formed in SiO2 by ion implantation by Makhavikou, M., Parkhomenko, I., Vlasukova, L., Komarov, F., Milchanin, O., Mudryi, A., Zhivulko, V., Wendler, E., Togambayeva, A., Korolik, O.

“…Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and…”
Get full text

Electrical and Optical Properties of SiO 2 Thin Layers Implanted with Zn Ions by Czarnacka, K., Koltunowicz, T.N., Makhavikou, M., Parkhomenko, I., Komarov, F.F.

Get full text

Formation of ZnSe Nanoclusters in Silicon Dioxide Layers by High-Fluence Ion Implantation: Experimental Data and Simulation Results by Makhavikou, M.A., Komarov, F.F., Komarov, A.F., Miskiewicz, S.A., Milchanin, O.V., Vlasukova, L.A., Parkhomenko, I.N., Żuk, J., Wendler, E.

Get full text

Structural and Luminescent Properties of Sn-Doped SiO2 Layers by Komarov, F. F., Vlasukova, L. A., Milchanin, O. V., Makhavikou, M. A., Parkhomenko, I. N., Wendler, E., Wesch, W., Mudryi, A. V., Ismailova, G. A.

“…The formation of tin nanocrystallites in a SiO 2 :Sn matrix using a high-dose implantation technique followed by high-temperature processing was studied…”
Get full text

Visible Photoluminescence of Non-Stoichiometric Silicon Nitride Films: The Effect of Annealing Temperature and Atmosphere by Vlasukova, L. A., Komarov, F. F., Parkhomenko, I. N., Milchanin, O. V., Makhavikou, M. A., Mudryi, A. V., Żuk, J., Kopychiński, P., Togambayeva, A. K.

“…The radiative properties of non-stoichiometric silicon nitride SiN x fi lms produced by plasma-enhanced chemical vapor deposition were studied. Intense…”
Get full text

Photoluminescence of SiO2/SiNx/SiO2/Si Structures with Off-Stoichiometric Silicon Nitride Layers by Romanov, I.A., Krekoten, N.A., Lu, H.-L., Vlasukova, L.A., Parkhomenko, I.N., Komarov, F.F., Milchanin, O.V., Makhavikou, M.A., Mudryi, A.V., Zhivulko, V.D., Kovalchuk, N.S.

“…Two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layers were fabricated on p-type Si-substrates by chemical…”
Get full text