Search Results - "Makarov, Yu.N"

Gas flow effect on global heat transport and melt convection in Czochralski silicon growth by Kalaev, V.V., Evstratov, I.Yu, Makarov, Yu.N.

“…We present a model of global heat transfer in Czochralski (CZ) systems for growth of silicon crystals, allowing a self-consistent calculation of radiative and…”
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Experimental and theoretical analysis of sublimation growth of AlN bulk crystals by Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu, Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., Helava, H.

“…The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC)…”
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Sublimation growth of AlN bulk crystals in Ta crucibles by Mokhov, E.N., Avdeev, O.V., Barash, I.S., Chemekova, T.Yu, Roenkov, A.D., Segal, A.S., Wolfson, A.A., Makarov, Yu.N., Ramm, M.G., Helava, H.

“…AlN single crystals of 0.5 in diameter and up to 10–12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm…”
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Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth by Lukanin, D.P., Kalaev, V.V., Makarov, Yu.N., Wetzel, T., Virbulis, J., von Ammon, W.

“…We present an updated version of the combined 2D/3D model of heat transfer and turbulent melt convection for industrial Czochralski (CZ) crystal growth. The 3D…”
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Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations by Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von

“…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D…”
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On mechanisms of sublimation growth of AlN bulk crystals by Segal, A.S, Karpov, S.Yu, Makarov, Yu.N, Mokhov, E.N, Roenkov, A.D, Ramm, M.G, Vodakov, Yu.A

“…A novel model of bulk AlN crystal growth by the sublimation technique is developed. The model takes into account both diffusive and convective transport of…”
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Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers by Vodakov, Yu.A., Roenkov, A. D., Ramm, M. G., Mokhov, E. N., Makarov, Yu.N.

“…Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC…”
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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

“…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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Numerical study of SiC CVD in a vertical cold-wall reactor by Vorob'ev, A.N., Karpov, S.Yu, Bogdanov, M.V., Komissarov, A.E., Bord, O.V., Zhmakin, A.I., Makarov, Yu.N.

“…The conventional heat and mass transport model is extended to describe silicon cluster formation in the gas phase and is employed for a numerical analysis of…”
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On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds by Talalaev, R.A., Yakovlev, E.V., Karpov, S.Yu, Makarov, Yu.N.

“…Kinetic effects limiting the growth rate in MOVPE of III–V compounds are analyzed. A general mechanism—the blocking of group III species adsorption sites by…”
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Analysis of sublimation growth of bulk SiC crystals in tantalum container by Karpov, S.Yu, Kulik, A.V, Zhmakin, I.A, Makarov, Yu.N, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A

“…Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred…”
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Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth by Bogdanov, M.V., Galyukov, A.O., Karpov, S.Yu, Kulik, A.V., Kochuguev, S.K., Ofengeim, D.Kh, Tsiryulnikov, A.V., Ramm, M.S., Zhmakin, A.I., Makarov, Yu.N.

“…We propose a new approach to optimization of SiC bulk crystal growth based on modeling. The idea is to employ a special software tool “virtual reactor” (VR)…”
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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

“…We present a computational model of 3D turbulent melt convection in Czochralski Si-crystal growth systems, based on the hybridization of Reynolds-averaged…”
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Simulation of Sublimation Growth of SiC Single Crystals by Karpov, S. Yu, Makarov, Yu. N., Ramm, M. S.

“…Modelling of sublimation growth of SiC is discussed with the goal to describe the mathematical models necessary to optimize the process and design of the…”
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Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors by Mazaev, K.M., Lobanova, A.V., Yakovlev, E.V., Talalaev, R.A., Galyukov, A.O., Makarov, Yu.N., Gotthold, D., Albert, B., Kadinski, L., Peres, B.

“…A combined modeling and experimental analysis of GaN/AlGaN deposition in the commercial vertical high-speed rotating-disk reactors produced by EMCORE is…”
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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection by Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., von Ammon, W.

“…We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during CZ Si crystal growth. The 3D…”
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Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide by Zhmakin, I.A., Kulik, A.V., Karpov, S.Yu, Demina, S.E., Ramm, M.S., Makarov, Yu.N.

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Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas by Segal, A.S, Vorob'ev, A.N, Karpov, S.Yu, Mokhov, E.N, Ramm, M.G, Ramm, M.S, Roenkov, A.D, Vodakov, Yu.A, Makarov, Yu.N

“…Silicon carbide growth by sublimation sandwich method in the atmosphere of an inert gas is studied both experimentally and theoretically. An analytical…”
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Quasi-thermodynamic model of SiGe epitaxial growth by Segal, A.S., Karpov, S.Yu, Sid’ko, A.P., Makarov, Yu.N.

“…A global model of SiGe chemical vapor deposition (CVD), accounting for the coupled heat and radiation transfer, species transport, surface reactions, and…”
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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface by Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v

“…A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt…”
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