Search Results - "Makarov, Yu"

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    Carbon defects as sources of the green and yellow luminescence bands in undoped GaN by Reshchikov, M. A., Demchenko, D. O., Usikov, A., Helava, H., Makarov, Yu

    “…In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at…”
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    Two yellow luminescence bands in undoped GaN by Reshchikov, M. A., McNamara, J. D., Helava, H., Usikov, A., Makarov, Yu

    Published in Scientific reports (25-05-2018)
    “…Two yellow luminescence bands related to different defects have been revealed in undoped GaN grown by hydride vapor phase epitaxy (HVPE). One of them, labeled…”
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    Evaluation of the concentration of point defects in GaN by Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu, Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.

    Published in Scientific reports (24-08-2017)
    “…Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation…”
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    Fine structure of the red luminescence band in undoped GaN by Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu

    Published in Applied physics letters (20-01-2014)
    “…Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor…”
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    Studying the Sensitivity of Graphene for Biosensor Applications by Usikov, A. S., Lebedev, S. P., Roenkov, A. D., Barash, I. S., Novikov, S. V., Puzyk, M. V., Zubov, A. V., Makarov, Yu. N., Lebedev, A. A.

    Published in Technical physics letters (01-05-2020)
    “…We have studied the response of graphene-film-based chips on SiC substrates (the relative change in the chip resistance) to coming into contact with…”
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    High Speed VCSEL Technology and Applications by Ledentsov, Nikolay N., Makarov, O. Yu, Shchukin, V. A., Kalosha, V. P., Ledentsov, N., Chrochos, L., Sanayeh, M. Bou, Turkiewicz, J. P.

    Published in Journal of lightwave technology (15-03-2022)
    “…Historically optical links up to 100-300m distances are served by light emitting devices in the 850 nm spectral range in combination with multimode glass…”
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    Evaluating the Impact of Place Branding on Internal Tourism Development in Russian Regions by Melnikov, R. M., Makarov, P. Yu

    Published in Regional research of Russia (01-12-2023)
    “…— The article tests hypotheses about how place branding initiatives impact the number of attracted tourists and revenues of the tourism and recreational sector…”
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    Graphene-based biosensors by Lebedev, A. A., Davydov, V. Yu, Novikov, S. N., Litvin, D. P., Makarov, Yu. N., Klimovich, V. B., Samoilovich, M. P.

    Published in Technical physics letters (01-07-2016)
    “…Results of developing and testing graphene-based sensors capable of detecting protein molecules are presented. The biosensor operation was checked using an…”
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    Prospects for the use of graphene-based biological sensors in the early diagnosis of Alzheimer's disease (review of literature) by Vorobev, S V, Yanishevskij, S N, Emelin, A Yu, Lebedev, A A, Lebedev, S P, Makarov, Yu N, Usikov, A S, Klotchenko, S A, Vasin, A V

    Published in Klinicheskaia laboratornaia diagnostika (21-01-2022)
    “…Among the most significant challenges presented to modern medicine is the problem of cognitive disorders. The relevance of her research is determined by the…”
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    Experimental and theoretical analysis of sublimation growth of AlN bulk crystals by Makarov, Yu.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Yu, Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Yu.A., Ramm, M.G., Davis, S., Huminic, G., Helava, H.

    Published in Journal of crystal growth (01-03-2008)
    “…The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC)…”
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    Serial data transmission at 224 Gbit/s applying directly modulated 850 and 910 nm VCSELs by Ledentsov, N., Chorchos, Ł., Makarov, O. Yu, Shchukin, V. A., Kalosha, V. P., Kropp, J.‐R., Turkiewicz, J. P., Kottke, C., Jungnickel, V., Freund, R., Ledentsov, N. N.

    Published in Electronics letters (01-09-2021)
    “…High‐speed discrete multitone serial data transmission over multi‐mode fibre at gross data rates up to 224 Gbit/s achieved with directly modulated…”
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    Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy by Solomonov, A. V., Tarasov, S. A., Men’kovich, E. A., Lamkin, I. A., Kurin, S. Yu, Antipov, A. A., Barash, I. S., Roenkov, A. D., Helava, H., Makarov, Yu. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2014)
    “…The results of work on developing and studying ultraviolet (UV) light-emitting diodes (LEDs) based on GaN/AlGaN heterostructures fabricated on Al 2 O 3 (0001)…”
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    On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena by Petrov, V. N., Sidorov, V. G., Talnishnikh, N. A., Chernyakov, A. E., Shabunina, E. I., Shmidt, N. M., Usikov, A. S., Helava, H., Makarov, Yu. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-09-2016)
    “…It is shown that a three-dimensional fractal–percolation system is formed in nanomaterials of light-emitting InGaN/GaN and AlGaN/GaN structures in the presence…”
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    Radiation hardness of n-GaN schottky diodes by Lebedev, A. A., Belov, S. V., Mynbaeva, M. G., Strel’chuk, A. M., Bogdanova, E. V., Makarov, Yu. N., Usikov, A. S., Kurin, S. Yu, Barash, I. S., Roenkov, A. D., Kozlovski, V. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2015)
    “…Schottky-barrier diodes with a diameter of ~10 µm are fabricated on n -GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates…”
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