Ultra-fast silicon detectors (UFSD)

We report on measurements on Ultra-Fast Silicon Detectors (UFSD) which are based on Low-Gain Avalanche Detectors (LGAD). They are n-on-p sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant...

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Bibliographic Details

Published in:	Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 831; no. C; pp. 18 - 23
Main Authors:	Sadrozinski, H.F.-W., Anker, A., Chen, J., Fadeyev, V., Freeman, P., Galloway, Z., Gruey, B., Grabas, H., John, C., Liang, Z., Losakul, R., Mak, S.N., Ng, C.W., Seiden, A., Woods, N., Zatserklyaniy, A., Baldassarri, B., Cartiglia, N., Cenna, F., Ferrero, M., Pellegrini, G., Hidalgo, S., Baselga, M., Carulla, M., Fernandez-Martinez, P., Flores, D., Merlos, A., Quirion, D., Mikuž, M., Kramberger, G., Cindro, V., Mandić, I., Zavrtanik, M.
Format:	Journal Article
Language:	English
Published:	Netherlands Elsevier B.V 21-09-2016 Elsevier
Subjects:	Charge multiplication Fast silicon sensors Pixel detectors Silicon strip Thin tracking sensors Silicon strip Pixel detectors Thin tracking sensors Fast silicon sensors Charge multiplication
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