Search Results - "Majumdar, Amlan"

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    Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs by Bangsaruntip, Sarunya, Cohen, Guy M, Majumdar, Amlan, Sleight, Jeffrey W

    Published in IEEE electron device letters (01-09-2010)
    “…Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel…”
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    On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs by Yang Liu, Luisier, M., Majumdar, A., Antoniadis, D. A., Lundstrom, M. S.

    Published in IEEE transactions on electron devices (01-04-2012)
    “…The ballistic injection velocity is examined in state-of-the-art Si extremely thin SOI MOSFETs using ballistic quantum simulations and a virtual source (VS)…”
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    Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires by Sekaric, Lidija, Gunawan, Oki, Majumdar, Amlan, Liu, Xiao Hu, Weinstein, Dana, Sleight, Jeffrey W.

    Published in Applied physics letters (13-07-2009)
    “…We have investigated the size dependence of field-effect mobility in top-down fabricated Si nanowires (NWs). We find that electron mobility increases while…”
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    Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs by Bedell, S.W., Majumdar, A., Ott, J.A., Arnold, J., Fogel, K., Koester, S.J., Sadana, D.K.

    Published in IEEE electron device letters (01-07-2008)
    “…The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were…”
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    High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors by Majumdar, A., Zhibin Ren, Sleight, J.W., Dobuzinsky, D., Holt, J.R., Venigalla, R., Koester, S.J., Haensch, W.

    Published in IEEE electron device letters (01-05-2008)
    “…We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit…”
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    Semiconductor Capacitance Penalty per Gate in Single- and Double-Gate FETs by Majumdar, Amlan

    Published in IEEE electron device letters (01-06-2014)
    “…We show that the double-gate (DG) FET geometry has lower gate capacitance per gate C G and lower sheet carrier density per gate N S than the single-gate (SG)…”
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    Analysis of Carrier Transport in Short-Channel MOSFETs by Majumdar, Amlan, Antoniadis, Dimitri A.

    Published in IEEE transactions on electron devices (01-02-2014)
    “…A method for extracting transport parameters in short-channel FETs is presented in the context of the Lundstrom model for quasi-ballistic short-channel FETs…”
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    Experimental determination of wave function spread in Si inversion layers by Majumdar, Amlan

    Published in Applied physics letters (16-08-2010)
    “…We have experimentally determined the extent of wave function spread T QM in Si inversion layers on (100)-oriented surface in metal-oxide-semiconductor…”
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    Drift of Schottky Barrier Height in Phase Change Materials by Nir-Harwood, Rivka-Galya, Cohen, Guy, Majumdar, Amlan, Haight, Richard, Ber, Emanuel, Gignac, Lynne, Ordan, Efrat, Shoham, Lishai, Keller, Yair, Kornblum, Lior, Yalon, Eilam

    Published in ACS nano (19-03-2024)
    “…Phase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their…”
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    Measurement of Carrier Mobility in Silicon Nanowires by Gunawan, Oki, Sekaric, Lidija, Majumdar, Amlan, Rooks, Michael, Appenzeller, Joerg, Sleight, Jeffrey W, Guha, Supratik, Haensch, Wilfried

    Published in Nano letters (01-06-2008)
    “…We report the first direct capacitance measurements of silicon nanowires (SiNWs) and the consequent determination of field carrier mobilities in…”
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    Benchmarking nanotechnology for high-performance and low-power logic transistor applications by Chau, R., Datta, S., Doczy, M., Doyle, B., Jin, B., Kavalieros, J., Majumdar, A., Metz, M., Radosavljevic, M.

    Published in IEEE transactions on nanotechnology (01-03-2005)
    “…Recently there has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several…”
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    Undoped-Body Extremely Thin SOI MOSFETs With Back Gates by Majumdar, A., Zhibin Ren, Koester, S.J., Haensch, W.

    Published in IEEE transactions on electron devices (01-10-2009)
    “…We present a detailed study of gate length scalability and device performance of undoped-body extremely thin silicon-on-insulator (ETSOI) MOSFETs with back…”
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    Gate capacitance of cylindrical nanowires with elliptical cross-sections by Majumdar, Amlan, Lin, Chung-Hsun

    Published in Applied physics letters (14-02-2011)
    “…We investigate gate capacitance of cylindrical nanowires with elliptical cross-sections because most fabricated Si nanowires have elliptical cross-sections. We…”
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