Search Results - "Majumdar, Amlan"
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Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
Published in IEEE electron device letters (01-09-2010)“…Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel…”
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2
On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETs
Published in IEEE transactions on electron devices (01-04-2012)“…The ballistic injection velocity is examined in state-of-the-art Si extremely thin SOI MOSFETs using ballistic quantum simulations and a virtual source (VS)…”
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3
Prelacteal feeding practice and maintenance of exclusive breast feeding in Bihar, India – identifying key demographic sections for childhood nutrition interventions: a cross-sectional study
Published in Gates open research (2019)“…Background : Exclusive breastfeeding (EBF) during the first six months of life is considered a high impact, but low-cost, measure for improving nutritional…”
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4
Size-dependent modulation of carrier mobility in top-down fabricated silicon nanowires
Published in Applied physics letters (13-07-2009)“…We have investigated the size dependence of field-effect mobility in top-down fabricated Si nanowires (NWs). We find that electron mobility increases while…”
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5
Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
Published in IEEE electron device letters (01-07-2008)“…The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were…”
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6
High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect Transistors
Published in IEEE electron device letters (01-05-2008)“…We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit…”
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7
Semiconductor Capacitance Penalty per Gate in Single- and Double-Gate FETs
Published in IEEE electron device letters (01-06-2014)“…We show that the double-gate (DG) FET geometry has lower gate capacitance per gate C G and lower sheet carrier density per gate N S than the single-gate (SG)…”
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Comment on “Zener tunneling in semiconducting nanotubes and graphene nanoribbon p-n junctions” [Appl. Phys. Lett. 93, 112106 (2008)]
Published in Applied physics letters (17-12-2012)Get full text
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9
Analysis of Carrier Transport in Short-Channel MOSFETs
Published in IEEE transactions on electron devices (01-02-2014)“…A method for extracting transport parameters in short-channel FETs is presented in the context of the Lundstrom model for quasi-ballistic short-channel FETs…”
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10
Experimental determination of wave function spread in Si inversion layers
Published in Applied physics letters (16-08-2010)“…We have experimentally determined the extent of wave function spread T QM in Si inversion layers on (100)-oriented surface in metal-oxide-semiconductor…”
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11
Drift of Schottky Barrier Height in Phase Change Materials
Published in ACS nano (19-03-2024)“…Phase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their…”
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12
Measurement of Carrier Mobility in Silicon Nanowires
Published in Nano letters (01-06-2008)“…We report the first direct capacitance measurements of silicon nanowires (SiNWs) and the consequent determination of field carrier mobilities in…”
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13
Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-10-2024)“…Herein, a low RESET current 1T1R mushroom‐cell phase‐change memory (PCM) device that uses fiber‐textured homostructure GeSbTe (GST) grown on highly oriented…”
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14
Characterization of Fast Relaxation During BTI Stress in Conventional and Advanced CMOS Devices With HfO2/TiN Gate Stacks
Published in IEEE transactions on electron devices (01-11-2008)Get full text
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15
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
Published in IEEE transactions on nanotechnology (01-03-2005)“…Recently there has been tremendous progress made in the research of novel nanotechnology for future nanoelectronic applications. In particular, several…”
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16
Undoped-Body Extremely Thin SOI MOSFETs With Back Gates
Published in IEEE transactions on electron devices (01-10-2009)“…We present a detailed study of gate length scalability and device performance of undoped-body extremely thin silicon-on-insulator (ETSOI) MOSFETs with back…”
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17
Gate capacitance of cylindrical nanowires with elliptical cross-sections
Published in Applied physics letters (14-02-2011)“…We investigate gate capacitance of cylindrical nanowires with elliptical cross-sections because most fabricated Si nanowires have elliptical cross-sections. We…”
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Prelacteal feeding practice and maintenance of exclusive breast feeding in Bihar, India – identifying key demographic sections for childhood nutrition interventions: a cross-sectional study: version 3; peer review: 2 approved
Published in Gates open research (14-06-2019)“…Background: Exclusive breastfeeding (EBF) during the first six months of life is considered a high impact, but low-cost, measure for improving nutritional…”
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19
Prelacteal feeding practice and maintenance of exclusive breast feeding in Bihar, India - identifying key demographic sections for childhood nutrition interventions: a cross-sectional study
Published in Gates open research (2019)“…: Exclusive breastfeeding (EBF) during the first six months of life is considered a high impact, but low-cost, measure for improving nutritional status, and…”
Get full text
Journal Article -
20
Prelacteal feeding practice and maintenance of exclusive breast feeding in Bihar, India – identifying key demographic sections for childhood nutrition interventions: a cross-sectional study
Published in Gates open research (2019)“…Background : Exclusive breastfeeding (EBF) during the first six months of life is considered a high impact, but low-cost, measure for improving nutritional…”
Get full text
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