Search Results - "Maiello, G."

Rapid spectrophotometric detection for optimized production of landomycins and characterization of their therapeutic potential by Chappell, Todd C., Maiello, Kathleen G., Tierney, Allison J., Yanagi, Karin, Lee, Jessica A., Lee, Kyongbum, Mace, Charles R., Bennett, Clay S., Nair, Nikhil U.

“…Microbial‐derived natural products remain a major source of structurally diverse bioactive compounds and chemical scaffolds that have the potential as new…”
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A Wavelet-Based Band Selection Method for Hyperspectral Image Classification by Bruni, V., Maiello, G., Monteverdea, G., Paglialungab, A., Vitulanoa, D.

“…This paper presents an adaptive wavelet-based band selection method for hyperspectral image classification, that simultaneously selects relevant bands by…”
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Stable electroluminescence from reverse biased n -type porous silicon–aluminum Schottky junction device by Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., La Monica, S., Maiello, G., Ferrari, A.

“…We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum-porous silicon junction. White light, visible in normal…”
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Stable electroluminescence from reverse biased n -type porous silicon–aluminum Schottky junction device by Lazarouk, S., Jaguiro, P., Katsouba, S., Masini, G., La Monica, S., Maiello, G., Ferrari, A.

“…We report the realization of a bright and stable electroluminescent Schottky diode based on aluminum-porous silicon junction. White light, visible in normal…”
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Visual determination of thickness and porosity of porous silicon layers by Lazarouk, S, Jaguiro, P, Katsouba, S, Maiello, G, La Monica, S, Masini, G, Proverbio, E, Ferrari, A

“…Optical characteristics of porous silicon layers of different thickness and porosity are simulated and interference spectra are calculated. The results are…”
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An algorithm for mine detection and localization by single frequency near field measurements by Brancaccio, A., Del Vecchio, A., Maiello, G.

“…We present an algorithm for mine detection and localization based on single view single frequency multistatic electromagnetic scattered field data collected in…”
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Progress in the field of integrated optoelectronics based on porous silicon by La Monica, S, Maiello, G, Ferrari, A, Masini, G, Lazarouk, S, Jaguiro, P, Katsouba, S

“…Aluminum-porous silicon (Al-PS) Schottky junctions have demonstrated to be promising candidates for stable, wide band emission, silicon based light sources…”
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Simulated disparity and peripheral blur interact during binocular fusion by Maiello, Guido, Chessa, Manuela, Solari, Fabio, Bex, Peter J

“…We have developed a low-cost, practical gaze-contingent display in which natural images are presented to the observer with dioptric blur and stereoscopic…”
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Dichoptic saccadic adaptation by Maiello, G., Harrison, W. J., Bex, P. J.

“…Abstract only…”
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Naturalistic Depth Perception and Binocular Vision by Maiello, G

“…Humans continuously move both their eyes to redirect their foveae to objects at new depths. To correctly execute these complex combinations of saccades,…”
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Visible light from aluminum-porous silicon Schottky junctions by Lazarouk, S, Jaguiro, P, Katsouba, S, La Monica, S, Maiello, G, Masini, G, Ferrari, A

“…The fabrication technologies and the properties of light-emitting devices based on Al-porous silicon (PS) Schottky junctions have been developed. Bright light…”
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Amorphous silicon sensors for oxidised porous silicon optical waveguides buried in silicon wafers by de Cesare, G, Maiello, G, Masini, G, Bondarenko, V, Ferrari, A

“…We have developed an original technology to fabricate channel waveguides on monocrystalline silicon wafers, consisting of selective anodization followed by…”
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Electroluminescence from aluminum-porous silicon reverse-biased Schottky diodes formed on the base of highly doped n-type polysilicon by Lazarouk, S, Bondarenko, V, La Monica, S, Maiello, G, Masini, G, Pershukevich, P, Ferrari, A

“…The fabrication and the properties of light-emitting aluminum-porous silicon Schottky diodes, formed on the base of highly doped n-type polysilicon are…”
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Porous silicon obtained by anodization in the transition regime by Bertolotti, M., Carassiti, F., Fazio, E., Ferrari, A., La Monica, S., Lazarouk, S., Liakhou, G., Maiello, G., Proverbio, E., Schirone, L.

“…A process is presented based on anodization of silicon in the transition region between the porous silicon formation regime and the electropolishing regime…”
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Porous silicon as low-dimensional host material for erbium-doped structures by Bondarenko, V., Dolgyi, L., Dorofeev, A., Kazuchits, N., Leshok, A., Troyanova, G., Vorozov, N., Maiello, G., Masini, G., La Monica, S., Ferrari, A.

“…A low-dimensional matrix of porous silicon (PS) was found to be an effective host material for erbium (Er) electrodeposition from Er(NO 3) 3·5H 2O/ethanol…”
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Crystallization of silicon carbide thin films by pulsed laser irradiation by De Cesare, G., La Monica, S., Maiello, G., Masini, G., Proverbio, E., Ferrari, A., Chitica, N., Dinescu, M., Alexandrescu, R., Morjan, I., Rotiu, E.

“…Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H)…”
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Crystallization of amorphous silicon carbide thin films by laser treatment by De Cesare, G., La Monica, S., Maiello, G., Proverbio, E., Ferrari, A., Dinescu, M., Chitica, N., Morjan, I., Andrei, A.

“…Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were crystallized by laser treatment. The samples, with a carbon content in the range 0%–50%, were…”
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Capacity coupled r.f. discharge plasma jet treatment of a-SiC:H structures by Ferrari, A., Maiello, G., La Monica, S., Proverbio, E., Dinescu, G., Dinescu, M., Chitica, N., Andrei, A., Sandu, V., Gartner, M., Masini, G.

“…Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were treated in a capacity coupled r.f. discharge plasma jet working in nitrogen. The samples, with…”
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Electrical characterization of visible emitting electroluminescent Schottky diodes based on n-type porous silicon and on highly doped n-type porous polysilicon by Lazarouk, S., Bondarenko, V., Jaguiro, P., Lacquaniti, N., La Monica, S., Maiello, G., Masini, G., Ferrari, A.

“…The electrical behaviour of electroluminescent Schottky diodes fabricated on the base of aluminum and n-type porous silicon is reported. Porous silicon was…”
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Characterization of silicon LEDs integrated with oxidized porous silicon SOI by Balucani, M., Bondarenko, V., Dorofeev, A., Ermalitski, F., Kazuchits, N., Maiello, G., Masini, L., Melnikov, S., La Monica, S., Volchek, S., Ferrari, A.

“…Slightly modified CMOS process has been used for the formation of lateral pn junctions in SOI structures based on oxidized porous silicon. Under forward bias…”
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