Search Results - "Mahon, S. J."

Modelling drain and gate dependence of HEMT 1-50 GHz, small-signal S-parameters, and d.c. drain current by Mahon, S.J., Skellern, D.J.

“…We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current…”
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Reduced-size E-band GaAs power amplifier MMIC by Bessemoulin, A., Tarazi, J., Rodriguez, M., McCulloch, M. G., Parker, A. E., Mahon, S. J.

“…We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of…”
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Miniaturized broadband up-converter MMIC by Bessemoulin, A., Convert, E. R., Parker, A. E., Mahon, S. J.

“…The design and performance of a miniaturized broadband up-converter MMIC is presented. The circuit is designed to operate as an harmonic FET mixer with an…”
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Wide-band MMIC Kowari mixer/phase shifters by Mahon, S.J., Harvey, J.T., Young, A.C.

“…A series of wide-band image-reject monolithic-microwave integrated-circuit mixer/phase shifters were designed, fabricated, and tested for operation in the…”
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Common-Gate Load-Pull With Q-Band Application by Mahon, S. J., Young, A. C., Parker, A. E.

“…A new technique is proposed for the design of linear power amplifiers at millimeter-wave frequencies where load-pull of large transistor output cells is…”
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A 42 GHz Amplifier Designed Using Common-Gate Load Pull by Mahon, S. J.

“…A new technique is proposed for the design of linear and power amplifiers at mm-wave frequencies where load-pull of large transistor output cells is difficult…”
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Compact W-Band PA MMICs in Commercially Available 0.1-µm GaAs PHEMT Process by Bessemoulin, A., Rodriguez, M., Tarazi, J., McCulloch, G., Parker, A. E., Mahon, S. J.

“…The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a…”
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Simulation of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias by MAHON, S. J, CHIVERS, M. J, SKELLERN, D. J

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History and Evolution of Millimetre-Wave MMICs for Point-to-Point Radio by Harvey, J. T., Mahon, S. J., Montgomery, W. F.

“…Over the last two decades, the capability and implementation of mm-wave point-to-point radios has changed almost beyond recognition. A manually-tuned,…”
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A scalable linear model for FETs by Tarazi, J., Mahon, S. J., Fattorini, A. P., Heimlich, M., Parker, A. E.

“…Summary form only given, as follows. A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. The…”
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A scalable linear model for FETs by Tarazi, J., Mahon, S. J., Fattorini, A. P., Heilmich, M. C., Parker, A. E.

“…A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are…”
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35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology by Mahon, S.J., Dadello, A., Fattorini, A.P., Bessemoulin, A., Harvey, J.T.

“…A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially…”
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Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier by Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., Wen-Kai Wang

“…A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power…”
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GaAs PHEMT Power Amplifier MMIC with Integrated ESD Protection for Full SMD 38-GHz Radio Chipset by Bessemoulin, A., Mahon, S.J., Harvey, J.T., Richardson, D.

“…The performance of a compact 38-GHz linear power amplifier MMIC' designed for use in SMD package is presented. The amplifier is fabricated with a 6-inch 0.15…”
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Packaged, Integrated 32 to 40 GHz Millimeter-Wave Up-Converter by Convert, E R O, Fattorini, A P, Mahon, S J, Evans, P W, McCulloch, M G, Hwang, S, Mould, R G, Young, A C, Harvey, J T

“…A 4 × 4 mm QFN overmoulded packaged up-converter has been developed for the 38 GHz point-to-point radio band. The MMIC contains LO-doubler-buffer amplifier,…”
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Determination of device structure from GaAs/AlGaAs HEMT DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic curves by Mahon, S J, Skellern, D J

“…A procedure for the inverse modeling of GaAs/AlGaAs HEMT structures from the DC < e1 > I < /e1 > - < e1 > V < /e1 > characteristic is described. The procedure…”
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Scalable HEMT distributed model for millimeter-wave applications by Hoque, M. E., Parker, A. E., Heimlich, M., Mahon, S. J.

“…A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic…”
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Performance analysis of distributed HEMT model with geometry by Hoque, M. E., Heimlich, M., Parker, A. E., Mahon, S. J.

“…The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region…”
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Simulations of HEMT DC drain current and 1 to 50 GHz < e1 > S < /e1 > -parameters as a function of gate bias by Mahon, S J, Chivers, M J, Skellern, D J

“…The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz < e1 > S < /e1 > -parameter model…”
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A technique for modelling < e1 > S < /e1 > -parameters for HEMT structures as a function of gate bias by Mahon, S J, Skellern, D J, Green, F

“…A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and…”
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