Search Results - "Mahfudh Yatmeidhy, Amran"

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  1. 1

    Magnetic-anisotropy modulation in multiferroic heterostructures by ferroelectric domains from first principles by Yatmeidhy, Amran Mahfudh, Gohda, Yoshihiro

    “…First-principles calculations incorporating spin-orbit coupling are presented for a multiferroic material as a ferromagnetic/ferroelectric junction. We…”
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    Journal Article
  2. 2

    Strain-induced specific orbital control in a Heusler alloy-based interfacial multiferroics by Okabayashi, Jun, Usami, Takamasa, Mahfudh Yatmeidhy, Amran, Murakami, Yuichi, Shiratsuchi, Yu, Nakatani, Ryoichi, Gohda, Yoshihiro, Hamaya, Kohei

    Published in NPG Asia materials (10-01-2024)
    “…For the development of spintronic devices, the control of magnetization by a low electric field is necessary. The microscopic origin of manipulating spins…”
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    Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study by Widianto, Muhammad Yusuf Hakim, Kadarisman, Hana Pratiwi, Yatmeidhy, Amran Mahfudh, Saito, Mineo

    Published in Japanese Journal of Applied Physics (01-07-2020)
    “…We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculations…”
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    Journal Article
  5. 5

    Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSi by Fujii, Shumpei, Usami, Takamasa, Shiratsuchi, Yu, Kerrigan, Adam M., Yatmeidhy, Amran Mahfudh, Yamada, Shinya, Kanashima, Takeshi, Nakatani, Ryoichi, Lazarov, Vlado K., Oguchi, Tamio, Gohda, Yoshihiro, Hamaya, Kohei

    Published in NPG Asia materials (2022)
    “…To overcome a bottleneck in spintronic applications such as those of ultralow-power magnetoresistive random-access memory devices, the electric-field control…”
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    Journal Article