Search Results - "Mah, K W"

Distinct pattern of commensal gut microbiota in toddlers with eczema by Mah, K W, Björkstén, B, Lee, B W, van Bever, H P, Shek, L P, Tan, T N, Lee, Y K, Chua, K Y

“…Recent studies have demonstrated differences in the composition of gut microbiota in infants with and without allergic diseases, particularly eczema. A…”
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Characterization of glutathione S-transferase from dust mite, Der p 8 and its immunoglobulin E cross-reactivity with cockroach glutathione S-transferase by Huang, C. H., Liew, L. M., Mah, K. W., Kuo, I. C., Lee, B. W., Chua, K. Y.

“…Summary Background Sensitization to mite and cockroach allergens is common, and diagnosis and therapy of allergy can be further complicated by the presence of…”
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Defect luminescence of GaN grown by pulsed laser deposition by Mah, K.W, McGlynn, E, Castro, J, Lunney, J.G, Mosnier, J-P, O’Mahony, D, Henry, M.O

“…GaN films with ∼0.4 μm thickness, without any intentional buffer layer, have been successfully grown on a sapphire (0 0 0 1) substrate by pulsed laser…”
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Effects of substrate temperature on the properties of In0.48Ga0.52P grown by molecular-beam epitaxy using a valved phosphorus cracker cell by YOON, S. F, MAH, K. W, ZHENG, H. Q, ZHANG, P. H

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Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates by YOON, S. F, MAH, K. W, ZHENG, H. Q, ZHANG, P. H

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Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy by Mah, K.W., Castro, J., Costello, J.T., Kennedy, E.T., Lunney, J.G., McGlynn, E., van Kampen, P., Mosnier, J.-P.

“…The expansion dynamics of Ga and GaN laser-ablation plumes were studied in vacuo using time-resolved extreme ultraviolet absorption spectroscopy. Targets of…”
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Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere by Mah, K.W, McGlynn, E, Mosnier, J-P, Henry, M.O, Castro, J, O'Mahony, D, Lunney, J.G

“…Low temperature photoluminescence measurements were performed on thin films of gallium nitride grown by pulsed laser deposition in a nitrogen atmosphere…”
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Electrical and optical properties of InP grown by molecular beam epitaxy using a valved phosphorus cracker cell by Yoon, S.F., Zheng, H.Q., Zhang, P.H., Mah, K.W., Ng, G.I.

“…We report the molecular beam epitaxial (MBE) growth of high quality epitaxial indium phosphide (InP) using a valved phosphorus cracker cell over a wide range…”
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Electrical and optical properties of InP grown at different cracking temperature and V/III ratio using a valve phosphorous cracker cell by Yoon, S.F, Zheng, H.Q, Zhang, P.H, Mah, K.W

“…We report the molecular beam epitaxial (MBE) growth of epitaxial InP using a valve phosphorous cracker cell at a range of cracking zone temperature ( T…”
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Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition by Mah, K. W., Mosnier, J.-P., McGlynn, E., Henry, M. O., O’Mahony, D., Lunney, J. G.

“…Epitaxial GaN films of thickness ∼1 μm have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in…”
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Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures by Zheng, H.Q, Yoon, S.F, Gay, B.P, Mah, K.W, Radhakrishnan, K, Ng, G.I

“…InGaP/GaAs layers were grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell. The photoluminescence (PL) peak energy of the InGaP…”
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Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy by Yoon, S.F., Mah, K.W., Zheng, H.Q., Gay, B.P., Zhang, P.H.

“…We report the characterization of InGaP grown lattice-matched to GaAs using a valved phosphorus cracker cell in solid source molecular beam epitaxy (SSMBE)…”
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The effect of elastic strain on the optical properties of InGaP/GaAs grown using a valved phosphorus cracker cell in solid source MBE by Yoon, S.F., Mah, K.W., Zheng, H.Q.

“…We report the effect of elastic strain on the optical properties of In1−xGaxP grown using a valved phosphorus cracker cell in solid source molecular beam…”
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V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy by Yoon, S.F, Mah, K.W, Zheng, H.Q

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Optimization of InxGa1−xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy by Zheng, H.Q, Yoon, S.F, Gay, B.P, Mah, K.W, Radhakrishnan, K, Ng, G.I

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EFFECTS OF V/III RATIO ON THE PROPERTIES OF In1-xGaxP/GaAs GROWN BY A VALVED PHOSPHORUS CRACKER CELL IN SOLID SOURCE MOLECULAR BEAM EPITAXY by Yoon, S F, Mah, K W, Zheng, H Q

“…Authors report the MBE growth of high-quality In1-xGaxP epilayers grown on a GaAs (001) substrate using a valved P cracker cell at a wide range of V/III flux…”
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Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: optimization of electrical, optical and surface morphology characteristics by Yoon, S.F., Zheng, H.Q., Zhang, P.H., Mah, K.W., Ng, G.I.

“…We report the molecular beam epitaxial (MBE) growth of epitaxial InP using a valved phosphorous cracker cell at a range of cracking zone temperature (T/sub…”
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APPLICATION OF ARTIFICIAL INTELLIGENCE TECHNIQUES IN PROCESS FAULT DIAGNOSIS by M.A. HUSSAIN, C.R. CHE HASSAN, K. S. LOH

“…Chemical processes are systems that include complicated network of material, energy and process flow. As time passes, the performance of chemical process…”
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