Search Results - "Magnee, P. H. C."

Layout and spacer optimization for high-frequency low-noise performance in HBT's by Vanhoucke, T, Donkers, J J T M, Hurkx, G A M, Magnee, P H C, van Dalen, R, Egbers, J H, Klaassen, D B M

“…In this work we study improvements of the high-frequency noise performance of HBT devices by means of layout and spacer optimization. Using an equivalent…”
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RF NMOS switch with dedicated sinks for reduced leakage current by Al-Sa'di, M. S. M., Donkers, J. J. T. M., Magnee, P. H. C., Brunets, I., Slotboom, J. W.

“…In this paper we introduce a method to significantly reduce the substrate leakage current in an RF NMOS switch device without degrading the device…”
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An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage by Dinh, T. V., Vanhoucke, T., Heringa, A., Al-Sa'di, M., Ivo, P., Klaassen, D. B. M., Magnee, P. H. C.

“…An SiGe heterojunction bipolar transistor having a very high open-base breakdown voltage (BV CEO ), which is close to the hard breakdown voltage (BV CBO ), is…”
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RF technology optimization by a fast method for linearity determination by Dinh, T. V., Vohra, A., Melai, J., Vanhoucke, T., Magnee, P. H. C., Klaassen, D. B. M.

“…This paper introduces a new methodology to determine the small signal linearity of a device directly from 2-port Y-parameters. With that approach, a 10-fold…”
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Fast noise prediction for process optimization using only standard DC and S-parameter measurements by Gridelet, E., Scholten, A. J., Klaassen, D. B. M., van Dalen, R., Pijper, R., Magnee, P. H. C., Tiemeijer, L. F., Dinh, V. T., Vanhoucke, T.

“…This paper presents a method to select, amongst a series of devices differing on their process, the best device in terms of high-frequency noise…”
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The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications by Magnee, Peter, Leenaerts, Domine, Van der Heijden, Mark, Dinh, Thanh Viet, To, Ivan, Brunets, Ihor

“…Modern communication standards provide very high data rates, which put strict requirements on the technology that is being used. SiGe BiCMOS is still crucial…”
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SiGe:C profile optimization for low noise performance by Magnee, P. H. C., van Dalen, R., Mertens, H., Vanhoucke, T., van Velzen, B., Huiskamp, P., Brunets, I., Donkers, J. J. T. M., Klaassen, D. B. M.

“…Today's state-of-the-art SiGe BiCMOS processes show impressive high-frequency performance, with f T and f MAX exceeding 500GHz. However, SiGe can also offer…”
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Extended high voltage HBTs in a high-performance BiCMOS process by Mertens, H., Magnee, P. H. C., Donkers, J. J. T. M., Gridelet, E., Huiskamp, P., Klaassen, D. B. M., Vanhoucke, T.

“…An approach to integrate extended high voltage (EHV) npn SiGe heterojunction bipolar transitors (HBTs) in a high-performance BiCMOS process is presented. The…”
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Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow by Mertens, H., Magnee, P. H. C., Donkers, J. J. T. M., van Dalen, R., Brunets, I., Van Huylenbroeck, S., Vleugels, F., Vanhoucke, T.

“…This paper describes a self-aligned SiGe heterojunction bipolar transistor (HBT) based on a standard double-polysilicon architecture and nonselective epitaxial…”
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Virtual technology for RF process and device development by Vanhoucke, T., Klaassen, D. B. M., Mertens, H., Donkers, J. J. T. M., Hurkx, G. A. M., Huizing, H. G. A., Magnee, P. H. C., Hijzen, E. A., van Dalen, R., Gridelet, E., Slotboom, J. W.

“…The increasing complexity of modern technologies has made semiconductor process and device development challenging. A reduction in the number of experimental…”
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A new trench bipolar transistor for RF applications by Hueting, R.J.E., Slotboom, J.W., Melai, J., Agarwal, P., Magnee, P.H.C.

“…A new vertical trench SiGe heterojunction bipolar transistor (HBT) is proposed that improves the tradeoff between the cutoff frequency (f/sub T/) and the…”
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Influence of output impedance on power added efficiency of Si-bipolar power transistors by van Rijs, F., Dekker, R., Visser, H.A., Huizing, H.G.A., Hartskeerl, D., Magnee, P.H.C., Dondero, R.

“…The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically…”
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"On-glass" process option for BiCMOS technology by Aksen, E., van Noort, W.D., Bower, D., Bell, N., Dekker, R., de Boer, W., Rodriguez, A., Deixler, P., Havens, R.J., Magnee, P.H.C.

“…An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable…”
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Enhanced conductance near zero voltage bias in mesoscopic superconductor-semiconductor junctions by Magnée, PH, van der Post N, Kooistra, PH, van Wees BJ, Klapwijk, TM

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High Performance SiGeC HBT integrated into a 0.25μm BiCMOS technology featuring record 88% power-added efficiency by HARTSKEERL, D. M. H, HUIZING, H. G. A, DEIXLER, P, VAN NOORT, W, MAGNEE, P. H. C

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Proximity and Josephson effects in superconductor-two-dimensional electron gas planar junctions by VOLKOV, A. F, MAGNEE, P. H. C, VAN WEES, B. J, KLAPWIJK, T. M

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Metal emitter SiGe:C HBTs by Donkers, J.J.T.M., Vanhoucke, T., Agarwal, P., Hueting, R.J.E., Meunier-Beillard, P., Vijayaraghavan, M.N., Magnee, P.H.C., Verheijen, M.A., de Kort, R., Slotboom, J.W.

“…SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f/sub T/, but low open base breakdown voltages, BV/sub CEO/, due to the…”
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Influence of low energy Ar-sputtering on the electronic properties of InAs-based quantum well structures by Magnée, P. H. C., den Hartog, S. G., Wees, B. J. van, Klapwijk, T. M., van de Graaf, W., Borghs, G.

“…The influence of low energy (80–500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching…”
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A new sub-micron 24 V SiGe:C resurf HBT by MELAI, J, MAGNEE, P. H. C, HUETING, R. J. E, NEUILLY, F. I, DE KORT, R, SLOTBOOM, J. W

“…For the first time a SiGe:C heterojunction bipolar transistor (HBT) is presented that uses the resurf effect to improve the cutoff frequency (f/sub T/) for a…”
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QUBiC4X : An fT/fmax=130/140GHz SiGe:C-BiCMOS manufacturing technology with elite passives for emerging microwave applications by DEIXLER, P, RODRIGUEZ, A, HURKX, G. A. M, TIEMEIJER, L. F, PAASSCHENS, J. C. J, HUIZING, H. G. A, HARTSKEERL, D. M. H, AGARWAL, P, MAGNEE, P. H. C, AKSEN, E, SLOTBOOM, J. W, DE BOER, W, SUN, H, COLCLASER, R, BOWER, D, BELL, N, YAO, A, BROCK, R, BOUTTEMENT, Y

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