Search Results - "Madureira, J. R."

Optical phonon modes of wurtzite InP by Gadret, E. G., de Lima, M. M., Madureira, J. R., Chiaramonte, T., Cotta, M. A., Iikawa, F., Cantarero, A.

“…Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis…”
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Polarized and resonant Raman spectroscopy on single InAs nanowires by Möller, M., de Lima, M. M., Cantarero, A., Dacal, L. C. O., Madureira, J. R., Iikawa, F., Chiaramonte, T., Cotta, M. A.

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Impact ionization and high-field effects in wide-band-gap semiconductors by Reigrotzki, M, Madureira, J.R, Kuligk, A, Fitzer, N, Redmer, R, Goodnick, S.M, Dür, M, Schattke, W

“…Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well…”
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Optical phonon modes of wurtzite InP by Gadret, E. G, Chiaramonte, T, Cotta, M. A, Iikawa, F, LimaJr, M. M. de, Cantarero, A, Madureira, J. R

“…Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis…”
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Carrier dynamics in stacked InP∕GaAs quantum dots by Veloso, A. B., Nakaema, M. K. K., de Godoy, M. P. F., Lopes, J. M. J., Iikawa, F., Brasil, M. J. S. P., Bortoleto, J. R. R., Cotta, M. A., Fichtner, P. F. P., Morschbächer, M., Madureira, J. R.

“…We investigated two stacked layers of InP∕GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP…”
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Carrier dynamics in stacked In P ∕ Ga As quantum dots by Veloso, A. B., Nakaema, M. K. K., de Godoy, M. P. F., Lopes, J. M. J., Iikawa, F., Brasil, M. J. S. P., Bortoleto, J. R. R., Cotta, M. A., Fichtner, P. F. P., Morschbächer, M., Madureira, J. R.

“…We investigated two stacked layers of In P ∕ Ga As type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that…”
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Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires [Phys. Rev. B 84 , 085318 (2011)] by Möller, M., de Lima, M. M., Cantarero, A., Dacal, L. C. O., Madureira, J. R., Iikawa, F., Chiaramonte, T., Cotta, M. A.

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Exciton g factor of type-II In P ∕ Ga As single quantum dots by de Godoy, M. P. F., Gomes, P. F., Nakaema, M. K. K., Iikawa, F., Brasil, M. J. S. P., Caetano, R. A., Madureira, J. R., Bortoleto, J. R. R., Cotta, M. A., Ribeiro, E., Marques, G. E., Bittencourt, A. C. R.

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Dye laser with pump and quantum noise by Madureira, AJ, Jung, P, Hänggi, P

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Escape from a fluctuating double well by Madureira, AJ, Hänggi, P, Buonomano, V, V, Rodrigues, Jr, WA

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Surmounting a fluctuating double well: A numerical study by Bartussek, R, Madureira, AJ, Hänggi, P

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Erratum: Escape from a fluctuating double well by Madureira, AJ, Hänggi, P, Buonomano, V, V, Rodrigues, Jr, WA

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