Search Results - "Maconi, A."

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    The onset of de novo autoantibodies in healthcare workers after mRNA based anti-SARS-CoV-2 vaccines: a single centre prospective follow-up study by Sacchi, M.C, Pelazza, C., Bertolotti, M., Agatea, L., De Gaspari, P., Tamiazzo, S., Ielo, D., Stobbione, P., Grappiolo, M., Bolgeo, T., Novel, P., Ciriello, M.M, Maconi, A.

    Published in Autoimmunity (Chur, Switzerland) (31-12-2023)
    “…Nowadays, data concerning the risk of autoimmune disease after SARS-CoV-2 (COVID-19) vaccination is controversial. The aim of this single centre prospective…”
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    Journal Article
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    Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices by Maconi, A., Arreghini, A., Monzio Compagnoni, C., Van den bosch, G., Spinelli, A.S., Van Houdt, J., Lacaita, A.L.

    Published in Solid-state electronics (01-08-2012)
    “…► Experimental evidence of lateral charge migration in planar device is shown. ► A 2D model able to reproduce the retention transients is developed. ► The…”
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    Journal Article
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    Physical Modeling for Programming of TANOS Memories in the Fowler-Nordheim Regime by Compagnoni, C.M., Mauri, A., Amoroso, S.M., Maconi, A., Spinelli, A.S.

    Published in IEEE transactions on electron devices (01-09-2009)
    “…This paper presents a physics-based model that is able to describe the TANOS memory programming transients in the Fowler-Nordheim uniform tunneling regime…”
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    Journal Article
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    Mortality in Covid-19 patients hospitalized in a teaching hospital in Italy during the first 3 waves by Bertolotti, M, Betti, M, Ferrante, D, Giacchero, F, Odone, A, Franceschetti, G, Carotenuto, M, Pacileo, G, Maconi, A

    Published in European journal of public health (21-10-2022)
    “…Introduction In Italy a Covid-19 pandemic pattern was observed, characterized by several waves, with an excess total mortality of 178000 deaths. Alessandria,…”
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    Journal Article
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    Semi-Analytical Model for the Transient Operation of Gate-All-Around Charge-Trap Memories by Amoroso, S. M., Monzio Compagnoni, Christian, Mauri, A., Maconi, A., Spinelli, A. S., Lacaita, A. L.

    Published in IEEE transactions on electron devices (01-09-2011)
    “…We present a detailed semi-analytical investigation of the transient dynamics of gate-all-around (GAA) charge-trap memories. To this aim, the Poisson equation…”
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    Journal Article
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    3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories by Amoroso, S M, Maconi, A, Mauri, A, Compagnoni, C M, Greco, E, Camozzi, E, Vigano, S, Tessariol, P, Ghetti, A, Spinelli, A S, Lacaita, A L

    “…We present a comprehensive investigation of the programming dynamics of nanoscale charge-trap memories, based on 3D Monte Carlo simulations accounting for: 1)…”
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    Conference Proceeding
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    Three-Dimensional Simulation of Charge-Trap Memory Programming-Part I: Average Behavior by Amoroso, S M, Maconi, A, Mauri, A, Compagnoni, Christian Monzio, Spinelli, A S, Lacaita, A L

    Published in IEEE transactions on electron devices (01-07-2011)
    “…This paper presents a detailed investigation of charge-trap memory programming by means of 3-D TCAD simulations accounting both for the discrete and localized…”
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    Journal Article
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    Comprehensive Investigation of Statistical Effects in Nitride Memories-Part I: Physics-Based Modeling by Mauri, A, Compagnoni, Christian Monzio, Amoroso, S M, Maconi, A, Ghetti, A, Spinelli, A S, Lacaita, A L

    Published in IEEE transactions on electron devices (01-09-2010)
    “…This paper presents a comprehensive investigation of statistical effects in deeply scaled nitride memory cells, considering both atomistic substrate doping and…”
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    Journal Article
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    New Erase Constraint for the Junction-Less Charge-Trap Memory Array in Cylindrical Geometry by Maconi, A., Compagnoni, C. M., Spinelli, A. S., Lacaita, A. L.

    Published in IEEE transactions on electron devices (01-07-2013)
    “…This paper presents a detailed simulation analysis of the erase performance of junction-less charge-trap memory arrays in the cylindrical geometry, showing…”
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    Journal Article
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    Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices by Spinelli, A. S., Monzio Compagnoni, Christian, Maconi, A., Amoroso, S. M., Lacaita, A. L.

    Published in IEEE transactions on electron devices (01-07-2012)
    “…We present a self-consistent 2-D quantum-mechanical model for charge distribution in cylindrical gate-all-around devices with computation of the gate tunneling…”
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    Journal Article
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    A new physics-based model for TANOS memories program/erase by Mauri, A., Compagnoni, C.M., Amoroso, S., Maconi, A., Cattaneo, F., Benvenuti, A., Spinelli, A.S., Lacaita, A.L.

    “…We present a new physics-based model able to reproduce the program/erase transients in TANOS memories, accurately describing the charge trapping/detrapping…”
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    Conference Proceeding
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    Three-Dimensional Simulation of Charge-Trap Memory Programming-Part II: Variability by Maconi, A, Amoroso, S M, Compagnoni, C M, Mauri, A, Spinelli, A S, Lacaita, A L

    Published in IEEE transactions on electron devices (01-07-2011)
    “…This paper investigates the statistical variability sources affecting the program operation of nanoscale charge-trap memories. Using the 3-D TCAD model…”
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    Journal Article
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    Comprehensive Investigation of Statistical Effects in Nitride Memories-Part II: Scaling Analysis and Impact on Device Performance by Monzio Compagnoni, C, Mauri, A, Amoroso, S M, Maconi, A, Greco, E, Spinelli, A S, Lacaita, A L

    Published in IEEE transactions on electron devices (01-09-2010)
    “…This paper presents a scaling analysis of the statistical distribution of the threshold voltage shift (Δ V T ) obtained by electron storage in nitride…”
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    Journal Article