Search Results - "MacLaren, S. W."

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  1. 1

    Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development by MacLaren, S. W., Baker, J. E., Finnegan, N. L., Loxton, C. M.

    “…Surface diffusion is shown to be the important factor in sputter–induced ripple and cone development on GaAs and InP surfaces for conditions typical of depth…”
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    Journal Article
  2. 2

    High‐sensitivity plasma‐based sputtered neutral mass spectrometry depth profiling of zinc‐implanted GaAs by MacLaren, S. W., Loxton, C. M., Sammann, E., Kiely, C. J.

    “…A commercial sputtered neutral mass spectrometer, using a rf‐generated plasma for both sputtering and postionization of sputtered particles, has been modified…”
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    Journal Article