Search Results - "Ma, Ziguang"
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Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range
Published in Scientific reports (03-06-2015)“…Light-emitting diodes (LEDs) in the wavelength region of 535–570 nm are still inefficient, which is known as the “green gap” problem. Light in this range…”
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Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
Published in Applied physics letters (18-08-2014)“…We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting…”
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3
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure
Published in Sensors (Basel, Switzerland) (16-06-2022)“…Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion…”
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Investigation of temperature-dependent photoluminescence in multi-quantum wells
Published in Scientific reports (31-07-2015)“…Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials…”
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The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
Published in Scientific reports (27-02-2017)“…We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a…”
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Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes' Performance and Its Optimization
Published in IEEE photonics journal (01-04-2022)“…Suppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating…”
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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
Published in Materials (21-04-2022)“…High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality…”
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Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
Published in Applied physics letters (14-04-2014)“…The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent…”
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Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode
Published in IEEE photonics technology letters (01-06-2018)“…SU-8 was found to be a good candidate for passivation of GaSb diodes, because of its stable chemical properties and high resistivity. However, stresses might…”
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10
Improving the Performance of Solar Cells Under Non-Perpendicular Incidence by Photonic Crystal
Published in IEEE photonics journal (01-08-2021)“…Photonic crystal has been proved to manipulate light effectively and improve the performance of solar cells. In this paper, high-performance GaAs-based solar…”
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Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells
Published in Crystals (Basel) (01-05-2023)“…Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type…”
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Temperature-dependent photoluminescence in light-emitting diodes
Published in Scientific reports (20-08-2014)Get full text
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A novel wavelength-adjusting method in InGaN-based light-emitting diodes
Published in Scientific reports (17-12-2013)Get full text
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14
The influence of excessive H2 during barrier growth on InGaN light-emitting diodes
Published in Materials research express (23-10-2020)“…The influence of excessive H2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this…”
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15
Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs
Published in Journal of display technology (01-02-2014)“…Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting diodes to numerically investigate the efficiency droop mechanism by…”
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Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction
Published in Science China. Physics, mechanics & astronomy (01-03-2010)“…GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor…”
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The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD
Published in Science China. Physics, mechanics & astronomy (01-03-2011)“…Nonpolar a -plane (1 0) GaN films have been grown on r -plane (1 02) sapphire by metal-organic chemical vapor deposition (MOCVD) under different growth…”
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Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals
Published in Optics express (15-02-2021)“…The photonic crystal (PC) has been demonstrated to be very effective in improving the extraction efficiency of light-emitting diodes (LEDs). In this paper,…”
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Temperature-dependent photoluminescence in light-emitting diodes
Published in Scientific reports (20-08-2014)“…Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier…”
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Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation
Published in Sensors and actuators. B, Chemical (01-03-2018)“…•We have proposed a simple Ni-pattern guided lateral growth method to fabricate selective-area GaN nanowire array.•Ni metal has formed contamination-free and…”
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