Search Results - "Ma, Ziguang"

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  1. 1

    Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range by Jiang, Yang, Li, Yangfeng, Li, Yueqiao, Deng, Zhen, Lu, Taiping, Ma, Ziguang, Zuo, Peng, Dai, Longgui, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Liu, Wuming, Chen, Hong

    Published in Scientific reports (03-06-2015)
    “…Light-emitting diodes (LEDs) in the wavelength region of 535–570 nm are still inefficient, which is known as the “green gap” problem. Light in this range…”
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  2. 2

    Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption by Du, Chunhua, Ma, Ziguang, Zhou, Junming, Lu, Taiping, Jiang, Yang, Zuo, Peng, Jia, Haiqiang, Chen, Hong

    Published in Applied physics letters (18-08-2014)
    “…We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting…”
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  3. 3

    Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si Structure by Li, Xinxin, Deng, Zhen, Ma, Ziguang, Jiang, Yang, Du, Chunhua, Jia, Haiqiang, Wang, Wenxin, Chen, Hong

    Published in Sensors (Basel, Switzerland) (16-06-2022)
    “…Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion…”
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  4. 4

    Investigation of temperature-dependent photoluminescence in multi-quantum wells by Fang, Yutao, Wang, Lu, Sun, Qingling, Lu, Taiping, Deng, Zhen, Ma, Ziguang, Jiang, Yang, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Chen, Hong

    Published in Scientific reports (31-07-2015)
    “…Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials…”
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  5. 5

    The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications by Yang, Haojun, Ma, Ziguang, Jiang, Yang, Wu, Haiyan, Zuo, Peng, Zhao, Bin, Jia, Haiqiang, Chen, Hong

    Published in Scientific reports (27-02-2017)
    “…We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a…”
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  6. 6

    Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes' Performance and Its Optimization by Zhang, Junyang, Li, Xuanzhang, Du, Chunhua, Jiang, Yang, Ma, Ziguang, Chen, Hong, Jia, Haiqiang, Wang, Wenxin, Deng, Zhen

    Published in IEEE photonics journal (01-04-2022)
    “…Suppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating…”
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  7. 7

    N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation by Su, Zhaole, Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Kong, Rui, Deng, Zhen, Ma, Ziguang, Du, Chunhua, Wang, Wenxin, Jia, Haiqiang, Chen, Hong, Jiang, Yang

    Published in Materials (21-04-2022)
    “…High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality…”
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  8. 8

    Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire by Du, Chunhua, Ma, Ziguang, Zhou, Junming, Lu, Taiping, Jiang, Yang, Jia, Haiqiang, Liu, Wuming, Chen, Hong

    Published in Applied physics letters (14-04-2014)
    “…The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent…”
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  9. 9

    Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode by Lu, Jinlei, Sun, Ling, Jiang, Yang, Ma, Ziguang, Jia, Haiqiang, Wang, Wenxin, Chen, Hong, Wang, Lu

    Published in IEEE photonics technology letters (01-06-2018)
    “…SU-8 was found to be a good candidate for passivation of GaSb diodes, because of its stable chemical properties and high resistivity. However, stresses might…”
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  10. 10

    Improving the Performance of Solar Cells Under Non-Perpendicular Incidence by Photonic Crystal by Tang, Xiansheng, Ma, Ziguang, Wang, Wenqi, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Zhang, Na, Huang, Kaiyun, Du, Chunhua, Jia, Haiqiang

    Published in IEEE photonics journal (01-08-2021)
    “…Photonic crystal has been proved to manipulate light effectively and improve the performance of solar cells. In this paper, high-performance GaAs-based solar…”
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  11. 11

    Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells by Guo, Jiaping, Liu, Weiye, Ding, Ding, Tan, Xinhui, Zhang, Wei, Han, Lili, Wang, Zhaowei, Gong, Weihua, Li, Jiyun, Zhai, Ruizhan, Jia, Zhongqing, Ma, Ziguang, Du, Chunhua, Jia, Haiqiang, Tang, Xiansheng

    Published in Crystals (Basel) (01-05-2023)
    “…Recent experiments have shown that more than 85% of photo-generated carriers can escape from multiple quantum wells (MQWs) sandwiched between p-type and n-type…”
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  12. 12
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  14. 14

    The influence of excessive H2 during barrier growth on InGaN light-emitting diodes by Li, Yangfeng, Yan, Shen, Junhui, Die, Hu, Xiaotao, Song, Yimeng, Deng, Zhen, Du, Chunhua, Wang, Wenqi, Ma, Ziguang, Wang, Lu, Jia, Haiqiang, Wang, Wenxin, Zhou, Junming, Jiang, Yang, Chen, Hong

    Published in Materials research express (23-10-2020)
    “…The influence of excessive H2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this…”
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  15. 15

    Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs by Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Chen, Fangsheng, Jiang, Yang, Wang, Lu, Jia, Haiqiang, Chen, Hong

    Published in Journal of display technology (01-02-2014)
    “…Staircase electron blocking layer (EBL) is incorporated in InGaN-based blue light-emitting diodes to numerically investigate the efficiency droop mechanism by…”
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  16. 16

    Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction by Zhang, YuChao, Xing, ZhiGang, Ma, ZiGuang, Chen, Yao, Ding, GuoJian, Xu, PeiQiang, Dong, ChenMing, Chen, Hong, Le, XiaoYun

    “…GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor…”
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  17. 17

    The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD by He, Tao, Li, Hui, Dai, LongGui, Wang, XiaoLi, Chen, Yao, Ma, ZiGuang, Xu, PeiQiang, Jiang, Yang, Wang, Lu, Jia, HaiQiang, Wang, WenXin, Chen, Hong

    “…Nonpolar a -plane (1 0) GaN films have been grown on r -plane (1 02) sapphire by metal-organic chemical vapor deposition (MOCVD) under different growth…”
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  18. 18

    Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals by Tang, Xiansheng, Han, Lili, Ma, Ziguang, Deng, Zhen, Jiang, Yang, Wang, Wenxin, Chen, Hong, Du, Chunhua, Jia, Haiqiang

    Published in Optics express (15-02-2021)
    “…The photonic crystal (PC) has been demonstrated to be very effective in improving the extraction efficiency of light-emitting diodes (LEDs). In this paper,…”
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  19. 19

    Temperature-dependent photoluminescence in light-emitting diodes by Lu, Taiping, Ma, Ziguang, Du, Chunhua, Fang, Yutao, Wu, Haiyan, Jiang, Yang, Wang, Lu, Dai, Longgui, Jia, Haiqiang, Liu, Wuming, Chen, Hong

    Published in Scientific reports (20-08-2014)
    “…Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier…”
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  20. 20

    Ni-pattern guided GaN nanowire-array humidity sensor with high sensitivity enhanced by UV photoexcitation by Peng, Mingzeng, Zheng, Xinhe, Ma, Ziguang, Chen, Hong, Liu, Sanjie, He, Yingfeng, Li, Meiling

    Published in Sensors and actuators. B, Chemical (01-03-2018)
    “…•We have proposed a simple Ni-pattern guided lateral growth method to fabricate selective-area GaN nanowire array.•Ni metal has formed contamination-free and…”
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