Facile fabrication of indium tin oxide/nanoporous carbon composites with excellent low-frequency microwave absorption

Facile fabrication of indium tin oxide/nanoporous carbon composites with excellent low-frequency microwave absorption

•The permittivity of ITO/NPC is tuned by the carrier concentration.•Superior MA properties is obtained by a combination of simulation and experiment.•The RL value of −60.55 dB is achieved at the low-frequency of 4.57 GHz.•The optimal RL value reaches −45.12 dB at 1.55 mm with a Sn/In ratio of 1:9. T...

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Bibliographic Details
Published in:Journal of alloys and compounds Vol. 889; p. 161636
Main Authors: Peng, Hualong, Ma, Xingjin, Liu, Chongbo, Lei, Chunwei, Li, Xin, Xiong, Zhiqiang
Format: Journal Article
Language:English
Published: Lausanne Elsevier B.V 31-12-2021
Elsevier BV
Subjects:
Carrier concentration
Carrier density
Complex permittivity
Composite materials
Frequency ranges
Indium tin oxides
ITO/NPC composites
Low frequencies
Low-frequency microwave absorption
Metal-organic framework
Metal-organic frameworks
Microwave absorbers
Microwave absorption
Pyrolysis
Simulated calculation
Tin
Simulated calculation
Low-frequency microwave absorption
Carrier concentration
Metal-organic framework
ITO/NPC composites
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Summary:•The permittivity of ITO/NPC is tuned by the carrier concentration.•Superior MA properties is obtained by a combination of simulation and experiment.•The RL value of −60.55 dB is achieved at the low-frequency of 4.57 GHz.•The optimal RL value reaches −45.12 dB at 1.55 mm with a Sn/In ratio of 1:9. The dielectric behavior and microwave absorption (MA) performance of doped semiconductor indium tin oxide (ITO)/nanoporous carbon (NPC) composites were scanned by a combination of simulations and experiments. In this work, designed homogeneous ITO/NPC composites were synthesized for the first time by the direct pyrolysis of In metal-organic framework doped with Sn (In/Sn-MOFs). Precise regulation of the complex permittivity of ITO/NPC was possible by controlling the carrier concentration, which resulted in superior MA performance. In addition, the conductive network of NPC, large surface areas & pore volumes and abundant heterogeneous interface of ITO/NPC were found to be the key aspects for MA performance. When the ratio of Sn/In was 1:9, ITO/NPC-2 exhibited outstanding MA property at low frequency. At 4.57 GHz and 4.10 mm, the maximum RL value of −60.55 dB was reached; while the RL values below −8 dB were found in the low-frequency range of 3.72–5.42 GHz. In addition, a strong reflection loss (RL) of −45.12 dB was obtained at 12.90 GHz and a small thickness of 1.55 mm. This work might provide a convenient and novel method for the construction of low frequency microwave absorbers.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2021.161636